Functional approach to the periodic Anderson model

The method of functional integration is applied to the study of the behavior of the electron subsystem of adsorbed films with a regular structure. The effective action functional is calculated; equations for its parameters have been derived and investigated.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova, Akademii Nauk SSSR, Vol. 180, pp. 44–52, 1990.     

Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range

The spectra of lateral photoconductivity in selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas are analyzed. It is revealed that the lateral photoconductivity spectra of these heterostructures exhibit two signals opposite in sign. The positive signal of the photoconductivity is associated with the impurity photoconductivity in silicon layers of the heterostructures. The negative signal of the photoconductivity is assigned to the transitions of holes from the SiGe quantum well to long-lived states in silicon barriers. The position of the negative photoconductivity signal depends on the composition of the quantum well, and the energy of the low-frequency edge of this signal is in close agreement with the calculated band offset between the quantum-confinement level of holes in the quantum well and the valence band edge in the barrier.     

Analytic upper-bound estimates for the critical loads of perfect ribbed shells

A new approximate approach is proposed to find upper-bound estimates for the critical loads of ribbed shells. Seventeen cases are considered, and the minimum critical load parameter is determined __________ Translated from Prikladnaya Mekhanika, Vol. 41, No. 12, pp. 74–83, December 2005.     

Reaction of alkylacetylenic complexes of gallium of the type MGaEt3 C≡CR with electrophilic reagents

Summary The introduction of gallium complexes MGaEt₃CCC₅H₁₁ (M=Li, Na) with electrophilic reagents such as HCl, I₂, , and ethylene oxide occurred with fission of the Ga-alkyne bond and the formation of the corresponding acetylenic compounds.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 10, pp. 2354–2356, October, 1981.     

Features of the surface morphology of CaF<Subscript>2</Subscript>/Si(100) films obtained by solid-phase epitaxy

The dielectric parameters of calcium fluoride films grown on the Si(100) surface by solid-phase epitaxy (group 2) and without it (group 1) are analyzed. It is established experimentally that the deposition mode of CaF₂ films immediately after growth of the Si buffer layer at a substrate temperature of 530°C is not suitable for producing high-quality dielectric layers. The use of solid-phase epitaxy at the initial stage of the nucleation of CaF₂ layers enables the production of single crystal uniformly thick films with high dielectric properties.