Dark electrical conductivity and photoconductivity of Ga4Se3S layered single crystals

Ga₄Se₃S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 310 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observed to increase with increasing temperature. The illumination dependence of photoconductivity was found to exhibit linear and supralinear recombination above and below 280 K, respectively. The change in recombination mechanism was attributed to the exchange in the behavior of sensitizing and recombination centers.     

Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals

Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl₂Ga₂Se₃S layered single crystals in the temperature range of 10-260 K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers.     

Energy band gap and oscillator parameters of Ga4Se3S single crystals

The optical properties of the Bridgman method grown Ga₄Se₃S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively.     

Phase Diagram of the System Tl<Subscript>2</Subscript>Te–Tl<Subscript>5</Subscript>Te<Subscript>3</Subscript>–Tl<Subscript>9</Subscript>GdTe<Subscript>6</Subscript>

The ternary system Tl–Gd–Te within the composition range Tl₂Te–T_l5Te₃–T_l9GdTe₆ was studied by a set of physicochemical analysis methods. Some internal polythermal sections and the isothermal section at 300 K of the phase diagram were built, projections of the liquidus and solidus surfaces were constructed, and the graphs of the concentration dependences of the parameters and microhardness were plotted. It was shown that much (more than 90%) of the area of the concentration triangle is occupied by the homogeneity region of solid solutions with the Tl₅Te₃ structure (δ-phase). Solid solutions based on Tl₂Te (α-phase) form within a narrow region. The regions of the α- and δ-phases are separated by two-phase region α + δ.     

Temperature dependence of Raman‐active mode frequencies and linewidths in TlGaSe2 layered crystals

Raman spectra of TlGaSe₂ crystal at different temperatures are discussed. The temperature dependence of frequency shifts and linewidths of the Raman peaks in the frequency region of 10‐320 cm^‐1 have been measured in the range from 50 to 320 K. The analysis of the experimental data showed that the temperature dependencies of phonon frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon‐phonon coupling) is found to be due to three‐phonon processes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal Data,Electrical Resisitivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals

X-ray powder diffraction data were obtained for Cu₃In₅Se₉ and Cu₃Te₉, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu₃In₅Se₉, was identified to be n-type with a room temperature resistivity of 3 × 10³ Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu₃In₅Te₉ exhibits p-type conduction with a room temperature resistivity of 8.5 × 10⁻³ Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.     

Anisotropy of Electrical Resistivity and Hole Mobility in InTe Single Crystals

The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain single crystals in parallel and perpendicular directions to c-axis have been investigated in the temperature range of 28–260 K. The high anisotropy between ∂‖ and ∂⟂ which depends on temperature is attributed to high concentration of stacking faults due to weak interchain bonding. The mobility parallel to c-axis was found to vary with temperature asμ α Tⁿ where n = -0.6 due to hole scattering on polar optical phonons. The mobility perpendicular to c-axis above 140 K increases with temperature exponentially with an activation energy of 0.03 eV which is attributed to the hopping mechanism due to the barriers between the chains.     

Effect of crystal disorder on linewidth of the Raman modes in GaS1‐xSex layered mixed crystals

The linewidths of Raman‐active intralayer compressional modes in GaS_1‐xSe_x layered mixed crystals (0 ≤ x ≤ 1) have been measured in the 10‐300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three‐phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anharmonicity in GaTe layered crystals

The temperature dependencies (10‐300 K) of seven Raman‐active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm^‐1. Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to threephonon processes.