Elektrometrie

Ohne Zusammenfassung     

Photoemission studies of the electronic structure of III–V semiconductor surfaces

The photoemission technique using synchroton radiation in the photon energy range 5–450 eV has been applied to the study of the electronic structure of some III–V semiconductor surfaces, prepared by cleavage in situ under ultrahigh vacuum conditions, ? 10^?11 Torr. For p-type GaAs(110), the Fermi level is pinned at the top of the valence band and thus no filled surface states extend into the band-gap. The situation is more complicated for n-type GaAs(110), where band bending easily can be introduced by extrinsic effects (impurities, cleavage quality, etc.) and push the Fermi level down to about midgap. Chemical shifts of inner core levels (3d for Ga and As) are used to obtain information on the bonding site of oxygen on the (110) surface. GaAs(110) can be exposed to atmospheric pressure of molecular oxygen without breaking the bonds between the surface atoms and the bulk. Oxygen is predominantly bonded to the As atoms on the surface. The oxidation behavior is strikingly different for GaSb(110) with formation of gallium and antimony oxides on the surface directly upon oxygen exposure. Heavier oxidation of GaAs(110) and breaking of the surface bonds will also be reported.     

Muon capture in oxides using the lifetime method

The relative capture rate has been measured for muons stopping in 22 oxides. The experimental method was to detect the decay electrons and to use the unique lifetime signature to determine which element captures the muon.     

Hyperfine field and diffusion of μ+ in Fe single crystals

In recent positive-muon spin rotation experiment at TRIUMF on single crystal Fe, a clear temperature dependent change has been observed, for the first time, both in frequency and depolarization rates from 300 K down to 23 K. The μ⁺ depolarization was explained by the μ⁺ diffusion through inhomogeneous dipolar fields and the diffusion constant was found to obey an Arrhenius law (activation energy 17 meV) above 70 K but surprisingly deviated from this at lower temperatures, indicating quantum diffusion. We have also found that the μ⁺ hyperfine field has a temperature dependence slightly stronger than that of the magnetization.