Numerical approach for the evolution of spin-boson systems and its application to the Buck–Sukumar model

We study the evolution properties of spin-boson systems by a systematic numerical iteration approach, which performs well in the whole coupling regime. This approach evaluates a set of coefficients in the formal expression of the time-dependent Schr?dinger equation by expanding the initial state in Fock space. This set of coefficients is unique for the spin-boson Hamiltonian studied, allowing one to calculate the time evolution from different initial states. To complement our numerical calculations, we apply the method to the Buck–Sukumar model. We find that when the ground-state energy of the model is unbounded and no ground state exists in a certain parameter space, the time evolution of the physical quantities is naturally unstable.     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

Pansystems studies in stability,bifurcation and chaos

This paper divides fixed subsets into three kinds, mainly discusses the existence of II-type fixed subset, connects the investigations infixed subsets with the studies in non-linear problems, such as stability, bifurcation, chaos, etc., and proposes a kind of discrete simulation to Liapunov stability and his second method.     

Effect of local structure on electron paramagnetic resonance spectra for trigonal [Cr(H2O)6]3+coordination complex in the sulfate alums series: a ligand field theory study

A simple theoretical method is introduced for studying the interrelation between electronic and molecular structures.By diagonalizing the 120 × 120 complete energy matrices,the relationships between zero-field splitting(ZFS) parameter D and local distortion parameter △θ for Cr 3+ ions doped,separately,in α-and β-alums are investigated.Our results indicate that there exists an approximately linear relationship between D and △θ in a temperature range 4.2-297 K and the signs of D and △θ are opposite to each other.Moreover,in order to understand the contribution of spin-orbit coupling coefficient ζ to ZFS parameter D,the relation between D and ζ is also discussed.     

二维混合区域的中子碰撞概率的计算

本文对由长方形或三角形栅元组成的反应堆栅格,从碰撞概率定义出发,建立了二维多体系统的中子首次碰撞概率计算的公式,并将计算结果与蒙特卡洛方法的计算结果进行了比较。     

GaAs/AlGaAs量子阱材料的X射线形貌及其发光性能

本文介绍了用X射线双品形貌术研究MBE生长的GaAs/AlGaAs量子阱材料中的生长缺陷、位错及其对发光性能的影响。同时研究了低温下MBE生长的GaAs/AlGaAs量子阱材料的正交方向的位错。在有应变超品格过渡层高温生长的量子阱材料中,位错及光致发光性能有明显的改善。     

HgCdTe材料应用与制备的进展

HgCdTe是一种有广泛应用前景的Ⅱ-Ⅵ族化合物半导体光电材料。从投资上看,它已为仅次于Si和GaAs的第三种最重要的半导体。HgCdTe是制作红外探测器的最佳材料。本文简要地介绍了HsCdTe材料的性质以及它的应用和制备进展,着重描述了在红外探测器上的应用。对制备HgCdTe单晶的各种工艺方法作了比较说明,较详细地介绍了滑动液相外延(LPE)制备HgCdTe单晶薄膜技术。     

透射光栅的实验标定和衍射效率的理论模拟

透射光栅广泛应用于软X射线能谱测量.为了获得用于惯性约束聚变研究的透射光栅的各级衍射效率及其他参数,在北京同步辐射源上200—1600 eV能量范围内对其进行了标定,获得了透射光栅衍射效率的实验结果.扩展了透射光栅衍射效率的计算方法,提出了7边准梯形截面衍射效率计算模型.分析拟合了实验数据,理论结果与实验结果很好符合.得到了7边准梯形的透射光栅栅线截面结构. 关键词： 透射光栅 衍射效率 实验标定 光栅模型     

自聚焦透镜高效批量加工的双面研磨抛光法研究

依据双面研磨抛光原理,提出了加工自聚焦透镜平面和斜面辅助工装设计.从工艺技术特点和生产实际过程等方面对设计的工装使用情况进行分析验证.多次大批量加工实践证明,该辅助工装的设计完全满足了自聚焦透镜高效批量加工技术要求,简化整个生产线工艺,减少工艺流程时间,降低材辅料的消耗成本,从而验证了双面研磨抛光法是一种实用的加工自聚焦透镜的新方法.