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951.
郭辉  路红亮  黄立  王雪艳  林晓  王业亮  杜世萱  高鸿钧 《物理学报》2017,66(21):216803-216803
石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.  相似文献   
952.
This paper describes an Ultraviolet-Visible Laser Absorption-Scattering (UV-Vis LAS) imaging technique applied to asymmetric fuel sprays. Continuing from the previous studies, the detailed measurement principle was derived. It is demonstrated that, by means of this technique, cumulative masses and mass distributions of vapor/liquid phases can be quantitatively measured no matter what shape the spray is. A systematic uncertainty analysis was performed, and the measurement accuracy was also verified through a series of experiments on the completely vaporized fuel spray. The results show that the Molar Absorption Coefficient (MAC) of the test fuel, which is typically pressure and temperature dependent, is the major error source. The measurement error in the vapor determination has been shown to be approximately 18% under the assumption of constant MAC of the test fuel. Two application examples of the extended LAS technique were presented for exploring the dynamics and physical insight of the evaporating fuel sprays: diesel sprays injected by group-hole nozzles and gasoline sprays impinging on an inclined wall.  相似文献   
953.
La0.67Sr0.33MnO3?δ thin films with different thicknesses are prepared in order to investigate the structural variation induced by film thickness and lattice misfit. The X-ray diffraction results show the in-built stress evolution from a full strained thin layer (~10 nm) to a completely relaxed thick layer (~150 nm), which can be well explained by the Poisson effect. Raman spectroscopy measurements reveal the complicated correlation between the Jahn–Teller (JT) distortion and film thickness. Important octahedron modes reflecting JT distortion are completely caused by the relaxed layer. It is observed that broad JT bands are formed in the films with large thickness of the relaxed layer and the residual stress in the layer leads to an obvious blue shift. In contrast, for films with the thin relaxed layer, JT modes are present as a sharper structure and move to low frequency, indicating towards a much better oxygen stoichiometry.  相似文献   
954.
We studied exchange coupling in the CoFe/Ru/CoFe synthetic antiferromagnetic structure with systematical replacement of the crystalline CoFe with amorphous CoFeB. Antiferromagnetic exchange coupling intensity decreases with an increase in the replacement in the bottom magnetic layer, which indicates that exchange coupling intensity could be tuned by the replacement. The origin of weakening antiferromagnetic exchange coupling is attributed to the amorphous CoFeB replacement inducing incomplete crystallization and disordered orientation in the Ru layer.  相似文献   
955.
This paper presents a miniaturized high performance high temperature superconducting (HTS) microwave receiver front-end subsystem, which uses a mini stirling cryocooler to cool a high selective HTS filter and a low noise amplifier (LNA). The HTS filter was miniaturized by using specially designed compact resonators and fabricating with double-sided YBCO films on LAO substrate which has a relatively high permittivity. The LNA was specially designed to work at cryogenic temperature with noise figure of 0.27 dB at 71 K. The mini cryocooler, which is widely used in infrared detectors, has a smaller size (60 mm × 80 mm × 100 mm) and a lighter weight (340 g) than the stirling cryocoolers commonly used in other HTS filter subsystem. The whole front-end subsystem, including a HTS filter, a LNA, a cryocooler and the vacuum chamber, has a size of only φ120 mm × 175 mm and a weight of only 3.3 kg. The microwave devices inside the subsystem are working at 71.8 K with a consumed cooling power of 0.325 W. The center frequency of this subsystem is 925.2 MHz and the bandwidth is 2.7 MHz (which is a fractional bandwidth of 0.2%), with the gain of 19.75 dB at center frequency and the return loss better than ?18.11 dB in the pass band. The stop band rejection is more than 60 dB and the skirt slope is exceeding 120 dB MHz?1. The noise figure of this subsystem is less than 0.8 dB. This front-end subsystem can be used in radars and communication systems conveniently due to it’s compact size and light weight.  相似文献   
956.
Nowadays,the high-critical-temperature radio frequency superconducting quantum interference device (high-T c rf SQUID) is usually coupled to a dielectric resonator that is a standard 10 × 10 × 1 mm 3 SrTiO 3 (STO) substrate with a YBa 2 Cu 3 O 7-δ (YBCO) thin-film flux focuser deposited on it.Recently,we have simulated a dielectric resonator for the high-T c rf SQUID by using the ANSOFT High Frequency Structure Simulator (ANSOFT HFSS).We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-impedance.The simulation results are quite close to the practical measurements.Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-T c rf SQUID.Therefore,we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-T c rf SQUIDs.  相似文献   
957.
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.  相似文献   
958.
测量了四-(叔丁基)-四氮杂卟啉金属配合物(MT(tBu)TAP,M=Cu, Co, Ni, Zn)的拉曼和红外光谱. 在B3LYP理论水平上计算了其基态结构和振动光谱,基于计算结果对观察到的拉曼谱带进行了详细的指认. 考察了拉曼和红外谱带频率变化与四氮杂卟啉环结构的关系. 随着环内核尺寸的减小,CβCβ′伸缩振动(Ag)、CαNm反对称伸缩振动(Ag)、以及CαNm对称伸缩振动(Bg) 的频率线性地增加,其中后两者对环内核尺寸的变化更为敏感.  相似文献   
959.
<正>Two novel dynamical quality of transmission(QoT) optimization schemes with explicit optimization targets and accurate end-to-end QoT estimation are proposed for reconfigurable transparent wavelength-division multiplexing(WDM) networks.Numerical simulations show that the scheme of quality(Q) best has the best Q factor improvement with large attenuation adjustment.The scheme of Q allowable can achieve minimized number of tuning sites and attenuation adjustment and also improve the Q factor of light path to the required value.In addition,the idea of dynamic QoT optimization and global impairment control has been experimentally demonstrated on a simple mesh network by the cooperation of a control plane and tunable devices.  相似文献   
960.
We report simple and efficient fabrication of large-area gold nanostructures using solution-processible gold nanoparticles, where lithography and vacuum evaporation techniques are not involved in the fabrication processes. These gold nanoisland structures exhibit strong particle plasmon resonance that is characterized by optical extinction spectroscopy in the visible spectral range. The tunability of the optical response is realized by controlling the annealing temperature and by changing the concentration of the colloidal solutions of gold nanoparticles. This enables a low-cost route for exploiting new photonic devices, biosensors, and optoelectronic devices with localized field-enhancement.  相似文献   
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