三维射频加速腔程序包MAFIA的开发和应用

介绍了三维射频加速器计算机辅助设计(CAD)程序包MAFIA的特点、功能及其应用。用CAD的方法实现了射频加速器特别是非轴对称带耦合腔的加速器的三维腔形设计。同时介绍了节省内存、节约机时的模型方法,使得在中小型机器上运行大程序(八万条)成为可能。文章主要对L波段的加速腔进行了数值模拟,并和实验进行了比较,结果符合较好;通过三维数值模拟及图形模拟的方法比较了各种形状谐振腔的性能;计算分析了输入耦合腔及高阶模耦合器对加速腔电磁场分布等参量的影响;提出了加耦合器后谐振频率改变的补偿方法。     

物理实验"十要十不要"

一要明确实验目的、原理和步骤;不要目的不明,原理不清,做一步想一步。 二要会从多种器材中选用精度要求和量程符合的器材;不要随意选用精度和量程不符合实际要求的仪器。     

CCD狭缝摄象

在过去的几十年中,各靶场已广泛应用狭缝摄影对种种飞行弹丸的多项重要技术参数进行测试,它在许多测试项目中应用的有效性、广泛性和经济性已被人们所肯定。据报道,在国外的一些靶场所进行的发射试验中,狭缝摄影机曾占全部测试设备中所使用的摄影仪器的百分之九十,这是因为狭缝摄影有其独特的、其它方法不可比拟的优点。     

平衡规划问题的熵函数方法及其在混合交通流中的应用

将参变极值问题的极大熵函数方法应用到求解平衡规划问题中,通过先验分布信息和Kullback熵概念,给出了平衡规划问题基于Kullback熵表示的熵函数求解方法,并将平衡规划的极大熵函数方法应用于求解混合交通平衡分配问题．     

Entropy estimate for high-dimensional monotonic functions

We establish upper and lower bounds for the metric entropy and bracketing entropy of the class of d-dimensional bounded monotonic functions under L^p norms. It is interesting to see that both the metric entropy and bracketing entropy have different behaviors for p<d/(d-1) and p>d/(d-1). We apply the new bounds for bracketing entropy to establish a global rate of convergence of the MLE of a d-dimensional monotone density.     

Global existence and blow-up of solutions to a parabolic system with nonlocal sources and boundaries

This paper deals with a semi-linear parabolic system with nonlinear nonlocal sources and nonlocal boundaries.By using super-and sub-solution techniques,we first give the sufficient conditions that the classical solution exists globally and blows up in a finite time respectively,and then give the necessary and sufficient conditions that two components u and v blow up simultaneously.Finally,the uniform blow-up profiles in the interior are presented.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

Some results on controllability of a nonlinear degenerate parabolic system by bilinear control

In this paper, we discuss the controllability of a nonlinear degenerate parabolic system with bilinear control. Based on the shrinking property of the solutions, we prove that the system is not globally approximately controllable. Furthermore, we give an approximate null controllability result. We also prove that the system is not globally exactly null controllable by a comparison principle.     

Characterization of oxide thin films using optical techniques

Thin films of oxide materials are playing a growing role as critical elements in optoelectronic devices and nanoscale devices. In this work, thin films of some typical oxides such as WO₃, Ga₂O₃ and SrTiO₃ were investigated. We present measurements of those films, using various optical techniques like photoconductivity transients over a wide time range and photo-Hall measurements. Analysis of the photo-Hall and photoconductivity data permits the determination of the contribution to the photoconductivity made by the carrier mobility and concentration. A model for dispersive carrier transport was proposed to explain the relaxation of the photoconductivity in oxide thin films. In addition, photoluminescence characterization was used to study microstructures and energy band in oxide thin films. The broad emission from oxide host, consisting of several band peaks, was likely due to a recombination process with several possible paths. The dependence of the luminescent intensity on the annealing atmosphere was associated with the presence of oxygen vacancies. It is suggested that our optical analysis efforts have improved the understanding of oxide thin films, and this should lead to the necessary advancements in a variety of devices.     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.