Three-dimensional Schwarzschild spacetimes

In the following we find all of the three-dimensional flat spacetimes which are static and rotationally symmetric.     

Quantum General Relativity,Torsion and Uncertainty Relations

It is shown that in gravitational theories with torsion one is led to commutation rules corresponding to Landau-Peierls type uncertainty relations.     

Estimating a reduced rank regression model for non-normal variables

A method using third order moments for estimating the regression coefficients as well as the latent state scores of the reduced-rank regression model when the latent variable(s) are non-normally distributed is presented in this paper. It is shown that the factor analysis type indeterminacy of the regression coefficient matrices is eliminated. A real life example of the proposed method is presented. Differences of this solution with the reduced-rank regression eigen solution are discussed.     

Study of the reaction238U (α, α′f) atE α=480 MeV

The excitation function of the fission probability P _E E _x) for²³⁸U has been measured in the reaction²³⁸U(α, α′ f) at 480 MeV bombarding energy. The reaction mechanism of this reaction is discussed for excitation energies belowB _nf , the threshold for second chance fission, and aboveB _nf up toE _x =37 MeV. In comparing with results from fission induced by photons and by particle transfer reactions the (α, α′f) reaction gives too low values for the fission probabilityP _f at excitation energies well aboveB _nE . The role of the quasi-elastic knock-out process in this reaction is discussed.     

IFS attractors and Cantor sets

We build a metric space which is homeomorphic to a Cantor set but cannot be realized as the attractor of an iterated function system. We give also an example of a Cantor set K in R³ such that every homeomorphism f of R³ which preserves K coincides with the identity on K.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

A study of formation of solid ionic conductors in the mixed system (CdI2)b[(Ag2O)·(CrO3)]100-b (20≤b≤80)

Using Wagner's polarization technique and EMF method the joinic and silver ionic transport number measurements of various compositions of the mixed system CdI₂-Ag₂O-CrO₃ have been made. The presence of AgI in these materials has been inferred from the typical β → α phase transition of AgI, which is characterized by an endothermic peak at around 420 K in the DSC traces of these specimens. While the structural analysis performed by means of powder X-ray diffraction has revealed the formation of ionic phases involving polycrystalline compounds, the Fourier transform infrared (FTIR) spectroscopic results have indicated the presence of ionic species thus confirming the ionic nature of the products. The complex impedance studies carried out in the frequency range 20 Hz - 1 MHz and over the temperature range 294 – 442 K have revealed that the best conducting composition, namely 55%(CdI₂) – 45%(Ag₂O·CrO₃), would exhibit a silver ionic conductivity of 1.3×10⁻⁵Scm⁻¹ at 294 K.     

Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N₂) or oxidizing (O₂) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N₂-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002     

Observation of dielectronic satellites in the K-spectrum of argon ions in plasma produced by femtosecond laser pulses

The satellite structure of 1s2p ^1,3 P ₁-1s ²¹ S ₀ lines of the He-like argon ion in plasma produced by a 45-fs laser pulse in a gas-jet cluster target is measured with a high spectral resolution. Radiation transitions 2p → 1s from autoionizing states (AISs) are detected for ions ranging from Li-like to F-like. The spectrum observed is theoretically simulated with the use of the spectroscopic data for the AISs of multicharged ions obtained within the multiconfiguration relativistic Hartree-Fock method. Good agreement with experimental data is obtained when the main population channels of these states are taken into account for typical values of cluster-target plasma parameters.