Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

圆形区域内香枞芽虫的分布模型

本文讨论圆形区域内芽虫分布模型,特别研究了芽虫与天敌接触时产生与避免outbreak状态的可能性。     

Observation of hydrogen induced intermediate borides in PrFeB based alloys by Mössbauer effect spectroscopy

In the present work, a quantitative analysis of the phase compositions by Mössbauer effect spectroscopy of solid and conventional hydrogen disproportionated Pr_13.7Fe_80.3B_6.0 and Pr_13.7Fe_63.5Co_16.7Zr_0.1B_6.0 alloys was carried out. Significant amounts of intermediate borides t-Fe₃B and Pr(Fe, Co)₁₂B₆ were detected after solid hydrogen disproportionation treatment in Pr_13.7Fe_80.3B_6.0 and Pr_13.7Fe_63.5Co_16.7Zr_0.1B_6.0 alloys, respectively. After conventional hydrogenation–disproportionation–desorption–recombination treatment these phases were not detected and in no case residual Pr₂Fe₁₄B-phase was found. It was observed that the amount of intermediate borides after disproportionation can be correlated with the degree of texture after recombination at various temperatures.     

鲁棒稳定性分析的值映射与参数化方法

本文运用值映射与参数化的方法研究了鲁棒D稳定性问题。文中给出了主要结果——参数空间鲁棒分析的边界定理,作为该结果的应用,一些现代鲁棒分析的知名结果,例如多项式族的稜边定理,Kharitonov定理和菱形定理都被简洁地证明出来;给出了一种判定双参数多项式族D稳定的新方法。用该方法可以方便地确定H稳定多项式按一定摄动模式(区间方式和菱形方形)的最大摄动界。     

万兆瓦可调谐窄线宽新型钕玻璃激光装置

本文报道了万兆瓦可调谐窄线宽新型钕玻璃激光装置的特色、所涉及的若干物理问题、装置的总体光路排布和关键技术,以及装置的总体输出性能。     

VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.