Time calibration for the end cap TOF system of BESⅢ

The time calibration for end cap TOF system of BESⅢ is studied in this paper.It has achieved about 110 ps time resolution for muons in dimu events.The pulse height correction using electronic scan curve and the predicted time calculated using Kalman filter method are introduced.This paper also describes the study of using electrons and muous as calibration samples.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Optimization on Synchrotron Radiation Lattice of BEPCII

The Beijing Electron and Positron Collider II （BEPCII） is a double ring electron positron collider, which can also be used as a synchrotron radiation （SR） light source. Since the BEPCII will start commissioning with SR mode in November 2006, it is essential to have a satisfying SR lattice. Here we first perform frequency map analysis on the original BEPCII SR lattice. The result shows that the resonance is really severe in the lattice and the transverse motion of particles is unstable. Then a new SR lattice is designed to obtain a large dynamic aperture and much more stable transverse motion. The dynamic aperture of the new lattice including nonlinear wiggler effect is calculated to be very good. This new SR lattice can be used in the commissioning stage of the BEPCII.     

半导体PbS纳米微粒的三阶非线性光学特性

用Z扫描技术,以锁模Nd:YAG激光器发出的脉宽为50ps激光作光源,在530nm和1060nm波长光作用下,研究了半导体PbS纳米微粒的非线性光学特性.结果发现在530nm激光作用下,样品有饱和吸收现象,而在1060nm激光作用下,双光子吸收出现,同时还研究了PbS纳米微粒对这两种光的限幅特性 关键词：     

14N16O2ν3带中红外激光磁共振超精细结构谱

报道了14N16O2ν3带(001-000)的5组新的超高分辨激光磁共振谱线的观测,包括实验的背景、装置、方法和结果.由于利用了内腔饱和吸收情况下的兰姆凹陷和最优化的相敏调制探测技术,所得光谱的分辨率达到了微波谱量级.这些谱线是分析14N16O2乃至非对称陀螺自由基分子的塞曼效应和超精细结构特性的重要实验资料.     

双掺杂LiNbO3:Fe:Mn全息存储动力学

建立了包括扩散、漂移和光伏打效应三种输运机制,小信号光强、小调制度近似下描述双掺杂LiNbO3:Fe:Mn晶体用双色光进行全息存储的动力学的耦合微分方程组,数值求解并解释了晶体光存储的时间动态发展过程.在此基础上,分析了晶体的氧化还原程度对全息存储过程的影响,只有在晶体总的受主数密度Na(即Fe3+和Mn3+的数密度之和)大于铁离子数密度N2的条件下,双掺杂LiNbO3:Fe:Mn晶体全息存储才能达到非破坏性存储的目的.经过光固定的光栅的衍射效率随氧化增大,光折变灵敏度随氧化而减小,要获得高衍射效率就必须以降低光折变灵敏度为代价.在掺铁浓度一定的情况下,掺锰浓度越高,能实现信息长期存储对应的氧化还原状态的有效动态范围越大.     

用等效网络方法求均匀弹簧纵振动的本征频率

利用机电类比方法导出了均匀质量弹簧在几种特定边界条件下的本征频率方程,并给出了相应的本征频率公式。体现了等效网络理论分析机械振动问题的优越性。     

Bohr-Mottelson公式对超形变带的比较研究

用Bohr-Mottelson的两参数、三参数和四参数公式对A～190区61条超形变带进行了系统分析. 结果显示:3个公式都能较好地拟合190区超形变带的E2跃迁谱,而且带首自旋的确定基本一致. 大部分带Bohr-Mottelson的三参数数值关系符合ab公式的理论预期值,小部分带的三参数数值关系符合Harris公式的理论预期值. 一半以上带的四参数数值关系与ab公式的预期值接近,而与Harris公式的预期值偏离较大. 表明两参数ab公式比Harris公式具有更广泛的实用性.     

二元高阶Lipschitz函数类和二重Fourier级数

利用二元函数的(r,s)阶差分和二元连续模函数定义了二元周期函数的高阶Lipschitz函数类Λr,s(ω)和λr,s(ω),并且从函数Fourier级数的系数出发,在复数域内给出了函数属于二元周期函数类的充分条件,在实数域内给出了函数属于二元周期函数类的充要条件.     

关于自反的n-colour有序分拆的一个关系式

给出了2v＋1的自反n-colour有序分拆数与v的n-colour有序分拆数之间的一个关系式,并由此关系式得到了一个组合恒等式.此外,还给出了正整数2v＋1的自反n-colour有序分拆数与正整数2v的＂奇-偶＂无序分拆数、2v分拆成奇数的有序分拆数等几类分拆数之间的一些分拆恒等式.