On the Causes and Effects of Contaminations during rf Diode Deposition of Cr-Si Alloys

Investigations to the causes and effects of contaminants at the rf diode deposition of CrSi films in a non-heated high vacuum apparatus were carried out comparing an oxygen-free fusion target with an oxygen-containing cermet target. The films of the fusion target contained considerable amounts of oxygen; analogously the oxygen concentration in the films was increased in the case of the cermet target. Moreover, hydrogen was found. The concentration of the contaminants decreased with the sputtering power, however the rate of incorporation increased. For high sputtering rates the contamination process was reproducible and independent of the plant conditioning; the deposited films were depth-homogeneous. The reasons for this behaviour lie in water sources which are activated first of all by the discharge itself. The electrical properties found are explained by the contaminants and the deposition conditions.     

An algebraic representation of the affine Bäcklund transformation

In 1980 Chern and Terng defined a Bäcklund transformation for affine minimal surfaces. In this paper we show that this Bäcklund transformation can be simply represented by an involution and translation of the affine conormal.     

On the retrograde condensation of one or two liquids

This contribution discusses the phenomena of retrograde condensation of one or two liquids. It w1 be shown that both phenomena can be well understood. Also the relation of retrograde condensation of one liquid phase with the condensation behavior of natural gas will be discussed. Similarly that of two liquid phases with multiple phase behavior occurring in low temperature reservoir fluids will be pointed out.     

Construction of equations for classical equilibrium correlation Green's functions on the basis of kinetic equations. II

Moscow Institute of Electronic Engineering. Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 89, No. 1, pp. 132–150, October, 1991.     

A generalised model and calculation of the hyperfine interaction constant for anomalous muonium in the crystalline lattice of silicon

A new microscopic model of anomalous muonium for the elemental semiconductors is proposed. The relevant configuration consisting of both a diamagrentic molecule Si−Mu and an unpaired orbital e⁻ is contained into a semivacancy of the real lattice. By using the unrestricted Hartree-Fock computational method the principal properties of the system are established. A dynamical version of the model together with a question on the formation of such system are discussed.     

The exactly resolved nonlattice model of random media based on Markov walks with a stable law for jumps

A random-medium model which is a correlated distribution of points (particles) randomly positioned in the 3-dimensional space is considered. The construction of the medium starts from a noncorrelated (Poisson) distribution of parent particles, each of them initiates a finite Markov chain of its descendants. The complete collection of correlation functions of all orders within the scope of the model have been obtained. The use of the 3-dimensional stable law (Lévy law) as a transition probability allows us to present the correlation function in an explicit form. Proceedings of the XVII Seminar on Stability Problems for Stochastic Models, Kazan, Russian, 1995, Part II.     

Linear systems of arbitrary genus

Kalman's theory is extended to a complete, smooth, and irreducible algebraic curve of arbitrary genus.