Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.     

Generalized elements in problem on asymptotic attainability

We consider a problem which implies the choice of a solution subject to asymptotic constraints. We represent the results as ultrafilters of the space of ordinary estimates (the space is not necessarily endowed with a topology). This representation corresponds to an abstract attainability problem in its nonsequential asymptotic version.     

Ionic relaxation in nematic liquid crystal cells

We investigate the dependence of the relaxation time of the current flowing in a nematic cell submitted to an external dc voltage on the physical properties of the substrate. We show that previously presented analyses of the same problem are not very useful for practical applications. We compare our theoretical predictions with experimental data, and show that the agreement is rather good. The influence of the adsorption-desorption phenomenon on the relaxation time is also discussed.