首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1330206篇
  免费   25802篇
  国内免费   7744篇
化学   659819篇
晶体学   20317篇
力学   74465篇
综合类   108篇
数学   241425篇
物理学   367618篇
  2021年   13511篇
  2020年   15940篇
  2019年   16051篇
  2018年   12602篇
  2016年   27853篇
  2015年   20822篇
  2014年   30462篇
  2013年   74509篇
  2012年   37171篇
  2011年   33693篇
  2010年   36850篇
  2009年   39330篇
  2008年   33267篇
  2007年   28929篇
  2006年   34977篇
  2005年   27750篇
  2004年   28966篇
  2003年   27473篇
  2002年   28640篇
  2001年   27199篇
  2000年   24120篇
  1999年   22161篇
  1998年   20910篇
  1997年   20967篇
  1996年   21084篇
  1995年   19169篇
  1994年   18619篇
  1993年   18171篇
  1992年   17962篇
  1991年   18301篇
  1990年   17439篇
  1989年   17532篇
  1988年   17086篇
  1987年   17101篇
  1986年   15992篇
  1985年   22442篇
  1984年   23756篇
  1983年   19931篇
  1982年   21651篇
  1981年   20888篇
  1980年   20252篇
  1979年   20365篇
  1978年   21706篇
  1977年   21279篇
  1976年   21004篇
  1975年   19675篇
  1974年   19335篇
  1973年   19782篇
  1972年   14291篇
  1967年   12543篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
The natural modes of a discrete linear system are orthogonal with respect to the mass and stiffness matrices in a generalized sense. However, these modes are usually not orthogonal to each other in the ordinary sense. The purpose of this paper is to document a number of conditions under which the modes are also orthogonal in an ordinary fashion.  相似文献   
992.
993.
994.
995.
The flowfield over a blunt-nosed cylinder was examined experimentally at a low subsonic speed for Re=1.88×105 and angles of attack up to 40°. Velocity measurements were carried out (employing a seven-hole Pitot tube) as well as wall static pressure and wall shear-stress measurements. Surface flow visualization was applied using liquid crystals and a mixture of oil–TiO2. For all the examined cases no flow asymmetries were found. For high angles of attack (20° and above) a separation “bubble” appears at the leeside of the nose area (streamwise flow separation). The basic feature of the circumferential pressure distribution at the after body area for these angles of attack is a plateau close to the suction peak and a fast recovery next to it. One streamwise vortex on each side of the symmetry plane is formed as well as a separation bubble about 90° far from this plane, where the cross-flow primary separation line is located. Each cross-flow primary separation line starts at the leeside nose area and moves towards the windward side along the cylindrical after body. The space between the two primary separation lines close to the wall is characterized by high flow fluctuations on the leeside, compared to the low fluctuations of the windward side.  相似文献   
996.
997.
Forces along Equidistant Particle Paths   总被引:1,自引:1,他引:0  
Two particles on the sphere leave the equator moving due south and travel at a constant and equal speed along a geodesic colliding at the south pole. An observer who is unaware of the curvature of the space will conclude that there is an attractive force acting between the particles. On the other hand, if particles travel at the same speed (initially parallel) along geodesics in the hyperbolic plane, then the particle paths diverge. Imagine two particles in the hyperbolic plane that are bound together at a constant distance with their center of mass traveling along a geodesic path at a constant velocity, then the force due to the curvature of the space acts to break the bond and increases as a quadratic function of the velocity. We consider this problem for the sphere and the hyperbolic plane and we give the exact formula for the apparent force between the particles. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
998.
We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τs300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τs is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τs in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that τs varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τs, imply that the Elliott–Yafet model dominates in these materials.  相似文献   
999.
We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs1−xNx,[GaP1−xNx] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {NAs[NP]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.  相似文献   
1000.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号