Determination of residual solvents in a transdermal system by means of headspace gas chromatography

Summary Pharmaceutical products have to be tested for impurities including residual solvents. This is also required in production control. The simplest solution to this problem is headspace gas chromatography. This paper describes the determination of residual volatile hydrocarbons in the transdermal system DEPONIT by only one headspace measurement. Accuracy is ensured by the multiple headspace extraction technique.

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Bestimmung von Restlösungsmittelgehalten in einem transdermalen System durch Headspace-Gas-Chromatographie

Zusammenfassung Pharmazeutische Produkte müssen auf Verunreinigungen geprüft werden, auch auf Restlösungsmittelgehalte. Ein zusätzlicher Grund ist die fortlaufende Kontrolle der Herstellung. Die einfachste Möglichkeit für dieses Problem ist die Bestimmung durch Headspace-Gas-Chromatographie. Dieser Artikel beschreibt die Bestimmung von noch vorhandenen flüchtigen Kohlenwasserstoffen in dem transdermalen System DEPONIT durch nur eine Headspace-Messung. Die Richtigkeit ist durch die Anwendung der Mehrfach-Gasextraktionstechnik sichergestellt.

     

A new group of fluorescent pH-indicators for an extended pH-range

Summary The pH versus fluorescence intensity profiles of a series of new pH-indicators are reported. They are characterized by two pK_a-values in the 3.7–4.9 and 6.9–7.9 range, respectively. The strong change in fluorescence intensity with pH allows the determination of pH's over a much wider range (typically 2–9) than with one-step indicators. They are therefore considered to be of potential utility for measurement of pH over the neutral and slightly acidity range which occurs, for instance, in bioliquids such as urine.

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Eine neue Gruppe fluorescierender pH-Indicatoren für einen erweiterten pH-Bereich

Zusammenfassung Die Fluorescenzintensitätsprofile als Funktion des pH-Wertes einer Reihe von neuen pH-Indicatoren werden untersucht. Sie sind charakterisiert durch zwei pK_a-Werte im Bereich 3,7–4,9 bzw. 6,9–7,9. Die gefundene starke Änderung der Fluorescenzintensität mit dem pH-Wert erlaubt eine pH-Bestimmung über einen viel weiteren Bereich (typischerweise 2 – 9) als mit einstufigen Indicatoren. Aus diesem Grund werden sie als potentiell nützlich angesehen zur Messung von pH-Werten im neutralen und schwach sauren Bereich, wie er z.B. in biologischen Flüssigkeiten, etwa im Urin, gegeben ist.

     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Observation of hydrogen induced intermediate borides in PrFeB based alloys by Mössbauer effect spectroscopy

In the present work, a quantitative analysis of the phase compositions by Mössbauer effect spectroscopy of solid and conventional hydrogen disproportionated Pr_13.7Fe_80.3B_6.0 and Pr_13.7Fe_63.5Co_16.7Zr_0.1B_6.0 alloys was carried out. Significant amounts of intermediate borides t-Fe₃B and Pr(Fe, Co)₁₂B₆ were detected after solid hydrogen disproportionation treatment in Pr_13.7Fe_80.3B_6.0 and Pr_13.7Fe_63.5Co_16.7Zr_0.1B_6.0 alloys, respectively. After conventional hydrogenation–disproportionation–desorption–recombination treatment these phases were not detected and in no case residual Pr₂Fe₁₄B-phase was found. It was observed that the amount of intermediate borides after disproportionation can be correlated with the degree of texture after recombination at various temperatures.     

VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.