Electroluminescence of silicon nanocrystals in MOS structures

We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiO_x (x<2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (>1000 °C) to induce the separation of the Si and the SiO₂ phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at ∼850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron–hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiO_x layer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiO_x layer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed. Received: 31 August 2001 / Accepted: 3 September 2001 / Published online: 17 October 2001     

Near- and mid-infrared laser-optical sensors for gas analysis

Semiconductor diode lasers were first developed in the mid-1960s and found immediate application as much needed tunable sources for high-resolution laser spectroscopy commonly referred to as tunable diode laser absorption spectroscopy (TDLAS). In this paper, currently available semiconductor lasers for spectroscopy in the near- and mid-infrared spectral region based upon gallium arsenide, indium phosphite, antimonides and lead-salt containing compounds will be reviewed together with the main features of TDLAS. Room-temperature measurements of atmospheric carbon dioxide near 2 μm will be discussed and recent results obtained with a fast chemical sensor for methane flux measurements based on lead-salt diode lasers operating near 7.8 μm will be presented.     

Smectic phases in hard particle mixtures: Koda's theory

Mixtures of parallel linear particles and spheres tend to demix upon compression. The linear species usually concentrates in regular layers, thus forming a smectic phase. With increasing concentration of spheres this ‘smectic demixing’ transition occurs at ever lower packing densities. For the specific case of hard spherocylinders and spheres Koda et al. [T. Koda, M. Numajiri, S. Ikeda, J. Phys. Jap., 65, 3551 (1996)] have explained the layering effect in terms of a second virial approximation to the free energy. We extend this approach from spherocylinders to other linear particles, namely fused spheres, ellipsoids and sphero-ellipsoids.     

Transport properties of LaCu2Si2 and CeCu2Si2 between 1.5K and 300K

We report measurements of the electrical resistivity, the thermal conductivityk and the thermoelectric powerS between 1.5K and 300K on the anomalous CeCu₂Si₂ compound and on LaCu₂Si₂ as reference compound. For LaCu₂Si₂ the temperature dependences of andS are in accord with those found in otherd band metals. For CeCu₂Si₂ the observed resistivity (220 µ cm at 200K) leads to a very short electronic mean free path which is of the order of the Ce-Ce spacing. Correspondingly,k is almost identical with the phonon contributionk _p . Below 20K, resistivity and thermoelectric power strongly suggest Fermi liquid behavior with a degeneracy temperature between 20K and 40K. Above 200K, both andS decrease proportionally to –ln(T/1 K).Work performed within the research program of the Sonderforschungsbereich 125 Aachen/Jülich/KölnPart of this work will be presented at the Int. Conf. on Rare Earths in the Metallic State, St. Pierre de Chartreuse, Sept. 1978     

Electrons in disordered systems. Scaling near the mobility edge

Renormalization group arguments are applied to an ensemble of disordered electronic systems (without electron-electron interaction). The renormalization group procedure consists of a sequence of transformations of the length and the energy scales, and of orthogonal transformations of the electronic states. Homogeneity and power laws are obtained for various one and two-particle correlations and for the low-temperature conductivity in the vicinity of the mobility edge. Two types of fixed point ensembles are proposed, a homogeneous ensemble which is roughly approximated by a cell model, and an inhomogeneous ensemble.     

Freeze-out conditions in ultrarelativistic heavy-ion collisions

We present recent results on single particle transverse momentum distributions of pions, kaons and protons, measured in CERN Experiment NA44, of 200 AGeV/c S+S and 158 AGeV/c Pb+Pb central collisions. By comparing these data with thermal and transport models, freeze-out parameters like the temperatureT _fo and the chemical potentials (μ _q ,μ _s ) are extracted and discussed.     

Transverse momentum distributions of neutral pions from central and peripheral16O+Au collisions at 200A·GeV

The production of neutral pions by the interaction of 200A·GeV p and¹⁶O projectiles with a Au target has been studied in the pseudorapidity range 1.5≦η≦2.1. Transverse momentum spectra have been measured between 0.4 GeV/c and 3.6 GeV/c and their dependence on the centrality of the collision has been investigated. The peripheral-collision spectra display a marked change of slope with a hard component starting at about 1.8 GeV/c, in contrast to central-collision data. The data are discussed in comparison to p+p and α+α data from the ISR.     

Kinetic energy spectrum and polarization of neutrons from the reaction 12C(p,n)X at 590 MeV

Abstact: The kinetic energy spectrum and the polarization of the PSI neutron beam produced in the reaction ¹²C(p,n)X at 0° with 590 MeV polarized protons were investigated. A strong energy dependence of the neutron beam polarization is observed which was not expected at the time the neutron beam was built. Received: 3 April 1998