Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10 Hz laser-plasma radiation source based on a gas puff target

The first results of experiments on direct photo-etching of heated PTFE using a 10 Hz X-ray source based on a laser-irradiated gas puff target are presented. X-ray radiation in the wavelength range from 6 to 20 nm was produced as a result of irradiation of a double-stream gas puff target with Nd:YAG laser pulses of energy 0.8 J and time duration 3 ns. The resulting X-ray pulses with energy of about 100–200 mJ were used to irradiate samples of PTFE to create microstructures by direct photo-etching. Strong enhancement of the photo-etching process was observed for samples heated up to 300 °C. PACS 52.38.Ph; 81.65.Cf; 61.82.Pv     

Microdrilling for fabricating micrometer-scale holes in soft matter

Probing the response of soft materials at small scales requires examining fundamental behaviors that are often distinct from large-scale interactions. In the development of micrometer- and nanometer-sized holes in soft materials, understanding failure modes becomes essential. We observe fracture behavior in a soft material through a novel method, which leads to the fabrication of small-scale holes in polydimethylsiloxane. We utilize an ultra-sharp tungsten needle to drill this soft elastomeric polymer; this results in controlled hole size and exhibits fracture characteristics observed in brittle materials at larger length scales. We also examine the macroscopic characteristics known to contribute to brittleness and hardness for this material’s response with respect to curing times. This understanding will contribute to many applications including the development of porous materials and DNA sequencing efforts. PACS 81.05.Lg; 81.40.Np; 82.35.Lr     

Investigation on hexamethyldisilazane vapor treatment of plasma-damaged nanoporous organosilicate films

Hexamethyldisilazane (HMDS) vapor treatment of plasma-damaged nanoporous organosilicate thin films has been studied as a function of treatment temperature in this work. Although, the HMDS vapor treatment facilitated incorporation of methyl (CH₃) groups subsequent to the removal of free hydroxyl (OH) groups in the damaged films at treatment temperature as low as 55 °C, the bonded OH groups were not removed. More significantly, detailed analysis of the results reveals that HMDS vapor modified only the surface of the plasma-damaged samples and not the entire film as expected. This is attributed to the formation of a thin solid layer on the surface, which effectively prevents penetration of HMDS vapors into the bulk. The Fourier transform-infrared (FT-IR) absorption and dielectric constant measurements confirm that the vapor treatment assists only partial curing of the plasma-damaged films. Alternative processes of curing the films with HMDS dissolved in supercritical carbon dioxide (SCCO₂) as a medium of reaction in static and pulsed modes were also attempted and the results are presented in this paper.     

Effect of accumulation on the formation of multiply charged ions in solids under grazing incidence of multiple laser radiation

The effect of accumulation on the formation of multiply charged ions in optically opaque solids as a function of the number and the angle of incidence of laser pulses is investigated by mass spectrometry. It is revealed that the accumulation effect manifests itself at prethreshold power densities q = 10⁸–10⁹ W/cm² irrespective of the angle of incidence of laser radiation α = 18°–85° and at subthreshold power densities q > 10¹⁰ W/cm² in the case of grazing incidence of laser radiation at an angle α = 85°. The accumulation effect brings about an increase in the maximum charge multiplicity Z _max of tungsten ions and a decrease in the number of impurity ions and in their intensity. No accumulation effect is observed at subthreshold power densities when laser radiation is incident at an angle α = 18°.     

Influence of the defect structure on the electrical conductivity of Pb5Ge3O11 single crystals at high temperatures

The impedance spectra of Pb₅Ge₃O₁₁ single crystals are measured in the frequency range from 5 Hz to 13 MHz at temperatures of 600 to 800 K in dry air and in a dry or wet nitrogen gas. It is found that the temperature and the gas composition significantly affect the electrical properties of the compound. The data obtained are used to discuss the origin of crystal lattice defects and their influence on charge transfer. It is concluded that the conduction is mixed in character (p-type electronic and ionic due to oxygen ions). The proton conduction is shown experimentally to be feasible. The possible mechanisms of proton transport in Pb₅Ge₃O₁₁ are discussed.     

Electron work function of Rb-Cs alloys

The temperature and concentration dependences of the electron work function (EWF) of rubidium, cesium, and nine Rb-Cs alloys are studied by the Fowler photoelectric method under the conditions of an ultra-high vacuum. It is shown that the polytherms of the electron work function for the pure components and alloys decrease by a linear law with increasing temperature. Based on the experimental data obtained, it is concluded that the concentration dependence of the EWF for the binary Rb-Cs system has a linear (additive) character within the limits of experimental error (about 1%). The presence of the azeotropic point on the state diagram of the system is not visualized in the concentration dependence of the work function.     

Silicon etching in Cl2 environment

The ion-beam-assisted etching of silicon in Cl₂ environment is considered. The theoretically calculated dependences of silicon etching rate on the flux of Cl₂ molecules at different ion current densities are compared with experimentally measured. The composition of the adsorbed layer is determined. It is found that SiCl₂ molecules prevail in the adsorbed layer. The reciprocal of relative concentration of SiCl₂ molecules in the adsorbed layer linearly depends on the ion-to-neutral flux ratio.     

Synthesis and magnetic properties of multilayer Ni/Cu and NiFe/Cu nanowires

Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm. The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer (VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices.     

General synchronization dynamics of coupled Van der Pol–Duffing oscillators

This paper considers the general synchronization dynamics of coupled Van der Pol–Duffing oscillators. The linear and nonlinear stability analysis on the synchronization process is derived through the Whittaker method and the Floquet theory in addition to the multiple time scales method. A stability map displaying different dynamical states of the system is performed. Numerical simulation is carried out to support and to complement the accuracy of the analytical treatment.