Dynamic structure factor in a random diffusion model

Let {X _t:0} denote random walk in the random waiting time model, i.e., simple random walk with jump ratew ^–1(X _t), where {w(x):x^d} is an i.i.d. random field. We show that (under some mild conditions) theintermediate scattering function F(q,t)=E ₀ (q^d) is completely monotonic int (E ₀ denotes double expectation w.r.t. walk and field). We also show that thedynamic structure factor S(q, w)=2 ₀ cos(t)F(q, t) exists for 0 and is strictly positive. Ind=1, 2 it diverges as 1/||^1/2, resp. –ln(||), in the limit 0; ind3 its limit value is strictly larger than expected from hydrodynamics. This and further results support the conclusion that the hydrodynamic region is limited to smallq and small such that ||D |q|², whereD is the diffusion constant.     

Europium-151 Mössbauer spectroscopic and XANES investigation of europium-exchanged Y-zeolite

Eu³⁺ in ca. 10 wt% europium-exchanged Y-zeolite is partially reduced by treatment in hydrogen at 600°C to Eu²⁺. The reduction of Eu³⁺ is more readily achieved in Y-zeolite than in europium(III) oxide. The discrepancy in the extent of reduction as revealed by¹⁵¹Eu Mössbauer spectroscopy and near edge X-ray absorption fine structure (XANES) is associated with any difference in the recoil free fractions of Eu²⁺ and Eu³⁺ which may exist at 298 K and the enhanced sensitivity of the XANES to changes in the europium oxidation state.     

Silicon carbide as electrode material of a pseudospark switch

Through the last years, the pseudospark switch, a low-pressure gas discharge switch with hollow cathode geometry, became established as a promising element of pulsed power technology and a serious alternative to other high-power switches. The use of a novel electrode material silicon carbide yields performance improvements in two main areas. Quenching phenomena, a long-standing problem for several applications, are suppressed completely and the switch lifetime can be distinctly increased, approaching that of thyratrons for operation with high repetition rate. As a crow-bar switch, the lifetime is nearby unlimited due to cold electrode usage. Spatial and temporal resolved spectroscopy revealed new insight into the extraordinary discharge behavior of silicon carbide electrodes. The radial plasma expansion from the central bore hole to the outer electrode regions, forming vesicular shells of different ionization stages of Si and C, are described in detail. The remaining problem, a significant loss of deuterium gas during discharge, has been long-term tested and is assumed to be the outcome of absorption in the silicon carbide electrodes. An envisaged promising remedy is presented     

Enhanced angular tolerance of resonant waveguide grating reflectors

We introduce an approach to enhance the angular tolerance of resonant waveguide gratings by stacking two resonant structures on top of each other. It is shown that reflectivities close to unity can be retrieved over the entire angular spectrum by a double T-shaped grating configuration. Although a combination of silicon as the high-index and diamond as the low-index material is considered, the principles of our new approach can also be used to realize monolithic silicon structures with similar properties. We illustrate that the functionality of the device can be understood by a decomposition into separated elements. Our approach might have compelling applications as new diffractive-reflective optical components with low-coating thermal noise in the field of high-precision metrology.     

Inversion domain boundaries in ZnO with additions of Fe2O3 studied by high-resolution ADF imaging

Columns of metal atoms in the polytypoid compound Fe2O3(ZnO)15 could be resolved by high angle annular dark field imaging in a transmission electron microscopy (TEM)/STEM electron microscope--a result which could not be realized by high-resolution bright field imaging due to inherent strain from inversion domains and inversion domain boundaries (IDBs) in the crystals. The basal plane IDB was imaged in [11 00] yielding the spacing of the two adjacent ZnO domains, while imaging in [21 1 0] yields the position of single metal ions. The images allow the construction of the entire domain structure including the stacking sequence and positions of the oxygen ions. The IDB consists of a single layer of octahedrally co-ordinated Fe3+ ions, and the inverted ZnO domains are related by point symmetry at the iron position. The FeO6 octahedrons are compressed along the ZnO c-axis resulting in a FeO bond length of 0.208 nm which is in the range of FeO distances in iron containing oxides. The model of the basal plane boundary resembles that of the IDB in polytypoid ZnO-In2O3 compounds.     

Heritability of Stroop and flanker performance in 12-year old children

Background  

There is great interest in appropriate phenotypes that serve as indicator of genetically transmitted frontal (dys)function, such as ADHD. Here we investigate the ability to deal with response conflict, and we ask to what extent performance variation on response interference tasks is caused by genetic variation. We tested a large sample of 12-year old monozygotic and dizygotic twins on two well-known and closely related response interference tasks; the color Stroop task and the Eriksen flanker task. Using structural equation modelling we assessed the heritability of several performance indices derived from those tasks.     

57Fe Mössbauer Spectroscopy Study of LaFe1−x Co x O3 (x=0 and 0.5) Formed by Mechanical Milling

Hyperfine Interactions - Perovskite-related phases of the type LaFe1?x Co x O3 (x=0 and 0.5) have been synthesised by milling techniques. The materials are of smaller particle size and more...     

Autocorrelation functions of nonlinear Fokker-Planck equations

The European Physical Journal B - We compute autocorrelation functions from nonlinear Fokker-Planck equations that describe nonlinear families of Markov diffusion processes and illustrate this...