Spin reorientation transition in single-domain

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in results in a spin reorientation transition and an anisotropic ac susceptibility which is fully consistent with a simple single-domain model. The uniaxial and biaxial anisotropy constants vary, respectively, as the square and fourth power of the spontaneous magnetization across the whole temperature range up to . The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally assisted magnetization switching.     

Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magnetoresistance (AMR) measured in the same lateral geometry. The direct link we establish between the TAMR and AMR indicates that TAMR may be observable in other materials showing room temperature AMR and demonstrates that the physics of nanoconstriction magnetoresistive devices can be much richer than previously thought.     

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

A modulated molecular beam technique, using mass spectrometric detection of desorbed species, had been applied to a study of the kinetics of Ga and As₄ interactions on {100} GaAs surfaces. Time domain mass spectrometer signals were processed using fourier transform techniques to provide information on surface lifetimes, sticking coefficients, desorption energies and reaction orders. In the temperature range 300–450 K As₄ is nondissociatively chemisorbed on Ga atoms from a weakly bound precursor state, but above 450 K there is a pairwise dissociation-recombination reaction between As₄ molecules adsorbed on adjacent Ga lattice sites. At temperatures higher than 600 K a temperature dependent Ga adatom population is formed by the desorption of As₂ from the surface. Thus above 450 K it is possible to produce GaAs from beams of the elements, but below this temperature the compound does not form.     

Pressure dependence of electron scattering by DX centres in GaAs and AlGaAs

Abstract

The electron mobility of heavily n-dopped GaAs and AlGaAs increases rapidly with applied hydrostatic pressure as carriers are trapped at DX centres. This has been taken as evidence against the Chadi and Chang (CC) negative charge state model of the DX centre. We argue that DX^? centres are formed close to d⁺ centres in highly doped samples, and that the mobility data is in fact fully consistent with the CC model, when such dipole-like correlations are included.     

Silicon migration during MBE growth of doped (A1, Ga)As films

Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.     

Quantized current in a quantum dot turnstile

We have performed RF experiments on a lateral quantum dot defined in the two dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The small capacitance of the quantum dot gives rise to single-electron charging effects, which we employed to realize a quantum dot turnstile device. By modulating the tunnel barriers between the quantum dot and the 2DEG leads with two phase-shifted RF signals, we pass an integer number of electrons through the quantum dot per RF cycle. This is demonstrated by the observation of quantized current plateaus at multiples ofef in current-voltage characteristics, wheref is the frequency of the RF signals. When an asymmetry is induced by applying unequal RF voltages, our quantum dot turnstile operates as a single-electron pump producing a quantized current at zero bias voltage.     

Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements

The merits of different modulated molecular beam detection systems are discussed and the application of modern data handling methods described. It is shown that by using time domain analysis together with fourier transform techniques, information on the kinetics of surface processes is obtained. Data at a number of excitation frequencies is obtained in a single experiment. A means of detecting non-linear surface processes, and an accurate method for the determination of reaction orders is given. The origin of spurious coherent signals is considered, and finally the application of the techniques is illustrated with data obtained from an investigation of the interaction of modulated As₄ beams with GaAs surfaces.     

Syntheses, characterization, and magnetic studies of copper(II) complexes with the ligand N,N,N',N'-tetrakis(2-pyridylmethyl)-1,3-benzenediamine (1,3-tpbd) and its phenol derivative 2,6-bis[bis(2-pyridylmethyl)amino]-p-cresol] (2,6-Htpcd)

The copper(II) complexes [Cu(4)(1,3-tpbd)(2)(H(2)O)(4)(NO(3))(4)](n)(NO(3))(4n)·13nH(2)O (1), [Cu(4)(1,3-tpbd)(2)(AsO(4))(ClO(4))(3)(H(2)O)](ClO(4))(2)·2H(2)O·0.5CH(3)OH (2), [Cu(4)(1,3-tpbd)(2)(PO(4))(ClO(4))(3)(H(2)O)](ClO(4))(2)·2H(2)O·0.5CH(3)OH (3), [Cu(2)(1,3-tpbd){(PhO)(2)PO(2)}(2)](2)(ClO(4))(4) (4), and [Cu(2)(1,3-tpbd){(PhO)PO(3)}(2)(H(2)O)(0.69)(CH(3)CN)(0.31)](2)(BPh(4))(4)·Et(2)O·CH(3)CN (5) [1,3-tpbd = N,N,N',N'-tetrakis(2-pyridylmethyl)-1,3-benzenediamine, BPh(4)(-) = tetraphenylborate] were prepared and structurally characterized. Analyses of the magnetic data of 2, 3, 4, and [Cu(2)(2,6-tpcd)(H(2)O)Cl](ClO(4))(2) (6) [2,6-tpcd = 2,6-bis[bis(2-pyridylmethyl)amino]-p-cresolate] show the occurrence of weak antiferromagnetic interactions between the copper(II) ions, the bis-terdentate 1,3-tpbd/2,6-tpcd, μ(4)-XO(4) (X = As and P) μ(1,2)-OPO and μ-O(phenolate) appearing as poor mediators of exchange interactions in this series of compounds. Simple orbital symmetry considerations based on the structural knowledge account for the small magnitude of the magnetic couplings found in these copper(II) compounds.     

Synthesis, characterization, and DNA binding properties of ruthenium(II) complexes containing the redox active ligand benzo[i]dipyrido[3,2-a:2',3'-c]phenazine-11,16-quinone

Synthetic methods toward ruthenium(II) complexes incorporating the benzo[i]dipyrido[3,2-a:2',3'-c]phenazine-11,16-quinone ligand, qdppn, are reported. In several cases, it was found that complexes containing coordinated benzo[i]dipyrido[3,2-a:2',3'-c]phenazine, dppn, could be chemically or photochemically oxidized to their qdppn analogues. Since this method was not possible in all the cases, a new, higher yielding, convenient synthesis of qdppn was developed. The crystal structure of the complex [Ru(phen)(2)(qppn)](PF(6))(2) (phen = 1,10-phenanthroline) which was synthesized from free qdppn reveals that a combination of π-π stacking between coordinated phen and qdppn units, as well as anion-ligand hydrogen bonding, define large hexagonal channels which are occupied by anions and solvent molecules. Electrochemical and photophysical studies reveal that the new qdppn-based complexes are not luminescent and, in contrast to their dppn analogues, they are also poor singlet oxygen sensitizers. Time-resolved studies and density functional theory (DFT) calculations indicate that optical properties of the new complexes are due to a short-lived charge separated state involving the quinone moiety of qdppn. The DNA binding properties of the new complexes have also been investigated. It was found that they are intercalators, displaying binding affinities which are comparable to their dppn analogues.     

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1]_ScN//[0 0 1]_Si and [1 0 0]_ScN//[1 0 0]_Si, despite the high (11%) lattice mismatch between ScN and Si. The film grain size increases and the film ω-FWHM decreases with increasing Sc flux, but the film roughness increases. Films grown under similar conditions on 111-oriented Si resulted in mixed 111 and 100 orientations, indicating that the 100 orientation is favoured both due to texture inheritance from the substrate and due to the growth conditions used.