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261.
Hilbert重级数定理的一个改进   总被引:15,自引:3,他引:12       下载免费PDF全文
The object of this note is to prove the followingTheorem Let{a_n}and{b_n}be sequences of real numbers such that0<∑∑a_n~2<+∞and0<∑b_n~2<+∞.Then we have the inequalitysum from m=1 to∞sum from n=1 to∞a_mb_n/m+n<{sum from n=1 to∞(π-θ/n~(1/2)a_n~2}~1/2{sum from n=1 to∞(π-θ/n~(1/2)b_n~2}~1/2 (1)whereθ=3/2~(1/2)-1=1.121320343.  相似文献   
262.
In the present paper an analytical potential form is used for overlap repulsive energy, derived by Harrison from quantum mechanical considerations, along with the composite effect of three-body forces and intersublattice displacement. The short-range overlap parameters in Harrison's potential form have direct correlation with the valence state energies for outermost electrons. The potential model is applied to calculate the third and fourth order elastic constants, first and second pressure derivatives of second order elastic constants, Grüneisen parameter and its volume dependence, Anderson parameter, and thermal expansion coefficient for three non-centrosymmetric crystals, viz. CaF2, SrF2 and BaF2. The calculated values of various physical quantities are found to be in good agreement with experimental data.The authors are grateful to Dr. Mansour Khalef, the Head of Physics Department, TNRC, Tajura (Tripoli) for the facilities and encouragements.  相似文献   
263.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 3, pp. 438–444, March, 1991.  相似文献   
264.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 535–540, October, 1991.  相似文献   
265.
The affine-scaling modification of Karmarkar's algorithm is extended to solve problems with free variables. This extended primal algorithm is used to prove two important results. First the geometrically elegant feasibility algorithm proposed by Chandru and Kochar is the same algorithm as the one obtained by appending a single column of residuals to the constraint matrix. Second the dual algorithm as first described by Adler et al., is the same as the extended primal algorithm applied to the dual.  相似文献   
266.
267.
An inverse process with independent positive increments is considered. For such a process, the first hitting time τx of level x as a function of x ≥ 0 is a proper process with independent positive increments. In terms of first hitting times and their Levy measures, multidemensional distribution densities and Laplace transformations are derived. Stationary distributions of increments of the process are investigated. Bibliography: 8 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 311, 2004, pp. 286–297.  相似文献   
268.
A piecewise linearization method based on the linearization of nonlinear ordinary differential equations in small intervals, that provides piecewise analytical solutions in each interval and smooth solutions everywhere, is developed for the study of the limit cycles of smooth and non-smooth, conservative and non-conservative, nonlinear oscillators. It is shown that this method provides nonlinear maps for the displacement and velocity which depend on the previous values through the nonlinearity and its partial derivatives with respect to time, displacement and velocity, and yields non-standard finite difference formulae. It is also shown by means of five examples that the piecewise linearization method presented here is more robust and yields more accurate (in terms of displacement, energy and frequency) solutions than the harmonic balance procedure, the method of slowly varying amplitude and phase, and other non-standard finite difference equations.  相似文献   
269.
Some geometric theorems can be stated in coordinate-free form as polynomials in Grassman algebra and can be proven by the anticommutative Gröbner basis method. In this article, we analyze some properties of both sets of hypotheses and conclusions of the theorem.  相似文献   
270.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).  相似文献   
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