Electron transport in corona charged 12 μm teflon FEP with saturable deep traps

Surface-potential measurements carried out in negatively corona charged 12 m samples of fluorethylenepropylene (Teflon FEP) showed the following characteristics: 1) with a constant charging current, the potential initially rises linearly, and then sublinearly; 2) the potential saturates irrespectively of the charging process and 3) practically no potential decay is observed after switching off the corona. These results have been interpreted in terms of an usual model (field-independent trapping time) for charge transport in insulators, with saturable deep traps in both surface and bulk of the sample and a relatively high electron mobility in order to prevent free-space charge accumulation. The partial differential equations derived from the model are numerically solved and it was found that only the product of the mobility with the trapping time is relevant to the fitting of experimental results, provided that >10^–8 cm²/Vs. A field-dependent trapping time model leads to poorer fittings.     

紫外分光光度法测定甲磺酸帕珠沙星原料药含量

采用紫外分光光度法测定了甲磺酸帕珠沙星原料药的含量,并与高效液相色谱法和酸碱滴定法的测定结果进行了比较.该法简便、快速、结果准确.为甲磺酸帕珠沙星在生产过程中的质量控制提供了可靠依据.     

Characterization of porosity in a 19th century painting ground by synchrotron radiation X-ray tomography

The study of the early oeuvre of the Swiss painter Cuno Amiet (1868–1961) has revealed that, up to 1907, many of his grounds were hand applied and are mainly composed of chalk, bound in protein. These grounds are not only lean and absorbent, but also, as Synchrotron radiation X-ray microtomography has shown, porous. Our approach to the characterization of pore structure and quantity, their connectivity, and homogeneity is based on image segmentation and application of a clustering algorithm to high-resolution X-ray tomographic data. The issues associated with the segmentation of the different components of a ground sample based on X-ray imaging data are discussed. The approach applied to a sample taken from “Portrait of Max Leu” (1899) by Amiet revealed the presence of three sublayers within the ground with distinct porosity features, which had not been observed optically in cross-section. The upper and lower layers are highly porous with important connectivity and thus prone to water uptake/storage. The middle layer however shows low and nonconnected porosity at the resolution level of the X-ray tomography images, so that few direct water absorption paths through the entire sample exist. The potential of the method to characterize porosity and to understand moisture-related issues in paint layer degradation are discussed.     

中波红外3 μm～5 μm宽带通滤光片的研制

 中波红外宽带通滤光膜通常膜系层数多,膜层总厚度非常大（厚度达到10 μm左右）,膜层的镀制工艺难度较大。通过分析红外带通滤光片几种设计方法的特点,并结合实际镀制工艺技术,采用了长波通与短波通及非规整薄膜设计技术相结合的方法,设计了以锗材料为基底的中波3 μm～５ μm宽带通滤光膜。该设计大幅度降低了膜层的总厚度（约为8.65 μm）,缩短了膜层的镀制周期,提高了膜层的牢固度;在膜层的镀制工艺过程中,通过改变薄膜材料的蒸发速率、修正蒸发硫化锌材料时电子枪的扫描方式、调整蒸发材料在坩埚中的装载方法,使膜层获得了优异的光谱性能,其通带平均透过率大于96%,截止区域的平均透过率小于1%。     

对超重、失重演示实验的改进

对传统的超重、失重演示实验进行了改进,使弹簧秤的指针能静止在超重(或失重)的位置上,从而能准确地读出读数,提高演示效果.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

镱的原子吸收分析进展

本文对近些年来用电热原子吸收和火焰原子吸收测定镱时,为提高镱的灵敏度而采用的各种方法进行总结评述。     

Cathodic and anodic pre-treated boron doped diamond with different sp content: Morphological,structural, and impedance spectroscopy characterizations

In this work, the influence of cathodic (Red) and anodic (Ox) pre-treatment on boron doped diamond (BDD) films grown with different sp²/sp³ ratios was systematically studied. The sp²/sp³ ratios were controlled by the addition of CH₄ of 1,3,5 and 7 sccm in the gas inlet during the growth process. The electrodes were treated in 0.5 mol L⁻¹ H₂SO₄ at −3 and 3 V vs Ag/AgCl, respectively, for 30 min. The electrochemical response of BDD films was investigated using electrochemical impedance spectroscopy (EIS) and Mott–Schottky Plot (MSP) measurements. Four film sample sets were produced in a hot filament chemical vapor deposition reactor. During the growth process, an additional H₂ line passing through a bubbler containing the B₂O₃ dissolved in methanol was used to carry the boron. The scanning electron microscopy morphology showed well faced films with a small decrease in their grain size as the CH₄ concentration increased. The Raman spectra depicted a pronounced sp² band, mainly for films with 5 and 7 sccm of CH₄. MSP showed a decrease in the acceptor concentration as the CH₄ increased indicating the CH₄ influence on the doping process for Red–BDD and Ox–BDD samples. Nonetheless, an apparent increase in the acceptor concentrations for both Ox–BDD samples was observed compared to that for Red–BDD samples, mainly attributed to the surface conductive layer (SCL) formation after this strong oxidation process. The EIS Nyquist plots for Red–BDD showed a capacitance increase for the films with higher sp² content (5 and 7 sccm). On the other hand, the Nyquist plots for Ox–BDD can be described as semicircles near the origin, at high frequencies, where their charge transfer resistance strongly varied with the sp² increase in such films.