Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar⁺ ions were implanted at 300 keV. Oxygen was incorporated by O⁺-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er³⁺ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.     

A Monte Carlo study of the thermodynamic properties of a quasi-one-dimensional organic polymer ferromagnet

The thermodynamic properties of a quasi-one-dimensional organic ferromagnet at different temperatures and in different applied magnetic fields have been investigated by means of the Heisenberg model combined with the Monte Carlo method. The results indicate that a peak in the magnetic susceptibility is obtained at low temperatures. Furthermore, the effect of dimerization on the magnetic properties has also been studied. We find that the dimerization suppresses the magnetization in this model. The ferromagnetic couplings between the side-free radicals stabilize the ferromagnetism and increase the apparent Curie temperature.     

Theoretical and experimental investigations of nanosecond 177.3 nm deep-ultraviolet light by second harmonic generation in KBBF

We have presented theoretical and experimental investigations of nanosecond (ns) deep-ultraviolet (DUV) 177.3 nm radiation by means of second harmonic generation (SHG) from a frequency-tripled Nd:YAG laser (355 nm, 49 ns and 10 kHz) in KBe₂BO₃F₂ (KBBF) nonlinear crystal for the first time. A DUV KBBF-SHG numerical model, accounting for linear absorption, pump depletion, beam spatial birefringent walk-off and diffraction, is performed in the Gaussian approximation of spatial and temporal profiles. In the experiment, a maximum average output power of 14.1 mW at 177.3 nm was obtained. The dependence of 177.3 nm output power on the 355 nm pump power was simulated. The calculated results are in good agreement with the measured data. We used the model further to investigate the optical conversion efficiency, pulse width, beam spatial intensity profile and beam quality factor of the generated 177.3 nm light, in particular the effect of beam birefringent walk-off.     

Effect of secondary phases evolution in the first sintering process on the critical current density of Bi-2223/Ag tapes

Effect of the evolution of the secondary phases in the first sintering process on the microstructure and critical current density of Bi-2223/Ag tapes has been studied. The amount and grain size of secondary phases were characterized by XRD and SEM/EDS. It has been found that both the microstructure and critical current of the fully reacted tapes depended strongly on the secondary phases formed in the first sintering process. The (Ca,Sr)₂CuO₃ and (Ca,Sr)₁₄Cu₂₄O₄₁ phases were easily formed and to be stable at higher temperature, however, at lower temperature, the CuO particles appeared easily and keeping stable with dwelling time. The best conversion to Bi-2223, together with the lowest amount of the total secondary phases was achieved when samples treated at 830 °C in 8.5% O₂. Samples with the lowest amount and minimum size of secondary phase produced in the first sintering process will obtain the best performance of the fully reacted tapes. The optimum sintering parameters are obtained by controlling the evolution of the secondary phases during the first sintering process.     

Attenuation of interfacial pinning enhancement in YBCO using a PrBCO buffer layer

Numerous experimental results have suggested that the J_c of YBa₂Cu₃O₇ (YBCO) films is significantly higher near the film–substrate interface than in the remainder of the film. We previously proposed that this effect is due to interfacial pinning enhancement caused by stress and the resulting misfit dislocations at the heteroepitaxial interface. To test this hypothesis we have used a non-superconducting PrBa₂Cu₃O_7?δ (PrBCO) buffer layer to minimize the lattice mismatch with YBCO. We find that the PrBCO layers lower J_c of the 0.4 μm YBCO films in a predictable way, and that, if sufficiently thick (～0.5 μm), they eliminate interfacial enhancement altogether. Our interpretation of this result is that the defects responsible for interfacial enhancement of flux pinning originate at the bottom of the non-superconducting PrBCO layer, which screens the pinning centers from vortices in YBCO. This result demonstrates that the pinning enhancement arises from stress at the film–substrate interface.     

Synchronization in evolving snowdrift game model

The interaction between the evolution of the game and the underlying network structure with evolving snowdrift game model is investigated. The constructed network follows a power-law degree distribution typically showing scale-free feature. The topological features of average path length, clustering coefficient, degree-degree correlations and the dynamical feature of synchronizability are studied. The synchronizability of the constructed networks changes by the interaction. It will converge to a certain value when sufficient new nodes are added. It is found that initial payoffs of nodes greatly affect the synchronizability. When initial payoffs for players are equal, low common initial payoffs may lead to more heterogeneity of the network and good synchronizability. When initial payoffs follow certain distributions, better synchronizability is obtained compared to equal initial payoff. The result is also true for phase synchronization of nonidentical oscillators.     

Laser diode end-pumped Yb:YAG/LBO green laser

With a type-I critical phase-matching LBO crystal, an intracavity frequency doubled solid-stated Yb:YAG green laser is reported. Using a plano-concave resonator, with pump power of 1.37 W, 24.5 mW TEM₀₀ continuous wave laser at 525 nm was obtained. The optical conversion efficiency is 1.8%. By adjusting the placed angle of LBO, several lasers wavelength from 525.0 to 537.8 nm could be extracted. The maximum output power at 537.8 nm is 3.1 mW.     

6.17-W continuous wave operation of a 2132-nm c-cut Tm,Ho:YAP pumped by a laser diode of 794.3 nm

Continuous wave (CW) operation of a c-cut Tm (5 at %), Ho (0.3 at %):YAP laser at 2132 nm wavelength were reported in this paper. In the temperature of 77 K, the Tm,Ho:YAP crystal was double end-pumped by a 21.4 W fiber-coupled laser diode (LD) at the center wavelength of 794.3 nm. Different resonator lengths and output couplers for the total pump power were tried. The resonator length was 205 mm, and the maximum CW output power of 6.17 W was acquired, corresponding to an optical-optical conversion efficiency of 28.8% and a slope efficiency of 35.6%.     

Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Temperature-electric field hysteresis loop of multicaloric effects in PbZr0.8Ti0.2O3 thin films

The Multicaloric effect in the PbZr_0.8Ti_0.2O₃ thin films is investigated with the application of sine wave electric field, dc electric field and stress using a phase field method combined with the thermodynamic analysis. The simulation results show that the adiabatic temperature change-electric field curve presents a shape of butterfly in the presence of the sine wave electric field. In order to detect the effect of the sine wave electric field, the multicaloric effect and the domain structures under the direct electric field and the sine wave electric field are compared. It is found that the domain switching behaviors are quite different under the different applied electric fields. And the negative multicaloric effect in the PbZr_0.8Ti_0.2O₃ thin film is attribute to the domain switching under the external field.