Left, right, and inner socles of associative systems

We investigate the basic properties of the different socles that can be considered in not necessarily semiprime associative systems. Among other things, we show that the socle defined as the sum of minimal (or minimal and trivial) inner ideals is always an ideal. When trivial inner ideals are included, this inner socle contains the socles defined in terms of minimal left or right ideals. This revised version was published online in June 2006 with corrections to the Cover Date.     

On the Hahn--Mazurkiewicz theorem

The following generalization of the Hahn-Mazurkiewicz theorem is proved: Let (E,e) be a locally compact locally connected metric space. Let M be a continuum in this space and let d,e∈ M. Then there is a continuous mapping f: [0,1]→E such that f(0) = d, f(1)= e and M⊂f([0,1]). Also some corollaries of this theorem are proved.     

On the vector field problem for O(n)/O(1)xO(1)xO(n-2)

We prove new results about the vector field problem on the real flag manifolds O(n)/O(1) x O(1) x O(n - 2). For some infinite families of these manifolds, we completely solve the vector field problem.     

Investigation of multiwavelength clock recovery based on heterodyne beats of sideband-filtered signal

We investigate a new parallel all-optical clock recovery scheme based on heterodyne beats of an optical sideband-filtered signal. The oscillating clock signal is recovered when the filtered sideband is combined with a stable local oscillator. The filtering is performed with an optical resonator, which by nature provides possibility for multiwavelength operation. The local oscillator could be realized by a multiwavelength laser, whose emission wavelengths are injection seeded with carrier wavelengths of the input data. The output signal of such a configuration benefits from a reduced bit-pattern effect and a stable offset level. The sideband filtering is demonstrated for 23 simultaneous channels at 100 GHz DWDM grid, each hosting a data stream of 10 Gbit/s.     

Lie-group theoretic method for analyzing interaction of discontinuous waves in a relaxing gas

A Lie group of transformations method is used to establish self-similar solutions to the problem of shock wave propagation through a relaxing gas and its interaction with the weak discontinuity wave. The forms of the equilibrium value of the vibrational energy and the relaxation time, varying with the density and pressure are determined for which the system admits self-similar solutions. A particular solution to the problem has been found out and used to study the effects of specific heat ratio and ambient density exponent on the flow parameters. The coefficients of amplitudes of reflected and transmitted waves after the interaction are determined.     

Photo-induced evolution of copper sheets from cluster molecules and its application to photolithographic copper patterning

UV photoexcitation of (t-butylethynyl copper)₂₄ cluster films induces segregation of the crystals into metallic and organic phases and leads to evolve the metallic sheets sandwiched by organic polymers. The growth of the metallic crystals in the plane of the photo-electromagnetic field is attributed due to plasmon-plasmon interaction among nanoparticles embedded in dielectric polymer matrices. The surface enhanced photochemical reaction of residual cluster molecules on the photon incident direction is expected to take an important role for joining the metal particles to produce a metallic sheet. We can apply this phenomenon for photolithographic copper pattern generation on a flexible base plate.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.