Defect-induced failure of optical coating filters

Optical filters composed of Ag, Al₂O₃, and ZnSe films were prepared on BK7 substrates by evaporation. By employing spectrophotometer, microscope, scanning electron microscope (SEM), and energy dispersive spectrum (EDS) analysis, the moisture-dependent stability of the samples was tested. The experimental results revealed that filter failure often occurs initially at defect sites. Small sputtering particles and pinhole are found to be two types of defects that induced the optical coating filter failure. The mechanisms of the defect-induced failure of the filters also are discussed in the article.     

掺氢与激励电路对钡蒸气激光输出特性的影响

对用Blumlein电路放电激励的钡蒸气激光在掺氢和不掺氢时的输出特性进行了实验研究.结果表明，用掺氢1.5%的氖气作缓冲气体能使激光功率增加近2倍.在此基础上，进一步比较了相互作用电路与Blumlein电路时钡蒸气激光的输出特性，发现相互作用电路能显著提高钡蒸气激光的输出功率和效率，获得了3W最大功率和0.4%效率的1.5μm波长激光输出.测量并分析了各工作参量与激光功率之间的关系，定性解释了掺氢与相互作用电路的作用机理 . 关键词： Blumlein电路 相互作用电路 掺氢 钡蒸气激光     

矩阵多分裂迭代法的收敛条件

本文给出了求解非奇异线性方程组的矩阵多分裂并行迭代法的一些新的收敛结果.当系数矩阵单调和多分裂序列为弱正则分裂时,得到了几个与已有的收敛准则等价的条件,并且证明了异步迭代法在较弱条件下的收敛性.对于同步迭代,给出了与异步迭代不同且较为宽松的收敛条件.     

500—4250eV电子对CO2的散射全截面绝对测量

对中能电子与二氧化碳分子碰撞的散射全截面测量，给出５００－４２５０ｅＶ电子对ＣＯ２的绝对散射全截面。对测量结果作了曲线拟合，并与已有的实验和理论结果进行了比较     

Transfer of quantum entangled states between superconducting qubits and microwave field qubits

Transferring entangled states between matter qubits and microwave-field (or optical-field) qubits is of fundamental interest in quantum mechanics and necessary in hybrid quantum information processing and quantum communication. We here propose a way for transferring entangled states between superconducting qubits (matter qubits) and microwave-field qubits. This proposal is realized by a system consisting of multiple superconducting qutrits and microwave cavities. Here, „qutrit” refers to a three-level quantum system with the two lowest levels encoding a qubit while the third level acting as an auxiliary state. In contrast, the microwave-field qubits are encoded with coherent states of microwave cavities. Because the third energy level of each qutrit is not populated during the operation, decoherence from the higher energy levels is greatly suppressed. The entangled states can be deterministically transferred because measurement on the states is not needed. The operation time is independent of the number of superconducting qubits or microwave-field qubits. In addition, the architecture of the circuit system is quite simple because only a coupler qutrit and an auxiliary cavity are required. As an example, our numerical simulations show that high-fidelity transfer of entangled states from two superconducting qubits to two microwave-field qubits is feasible with present circuit QED technology. This proposal is quite general and can be extended to transfer entangled states between other matter qubits (e.g., atoms, quantum dots, and NV centers) and microwave- or optical-field qubits encoded with coherent states.     

Ab initio方法研究~(40)Ca~(35)Cl分子的自旋轨道耦合效应和跃迁性质

本文研究了~(40)Ca~(35)Cl分子低态的自旋轨道耦合分裂以及获得更精确的光谱常数和更高的激发态.以从头算理论为基础,使用多参考组态相互作用方法获得了该分子的势能曲线和自旋轨道分裂,之后求解径向一维薛定谔方程获得光谱常数.得到了~(40)Ca~(35)Cl分子7个Λ-S低电子态的势能曲线和永久偶极矩,以及A~2Π→~2Σ~+,1~2Δ和C~2Π→~2Σ~+,1~2Δ跃迁的跃迁偶极矩,得到的光谱常数(不管是考虑了自旋轨道耦合(SOC)还是没有考虑SOC)与实验值非常符合,且要好于之前的理论计算结果 .值得注意的是,目前的计算还首次得到了C~2Π→~2Σ+,1~2Δ跃迁的跃迁性质,为之后实验观察~(40)Ca~(35)Cl分子的高激发态光谱和跃迁性质提供有益的理论参考.     

PYX基高聚物粘结炸药界面相互作用及力学性能的分子动力学模拟

本文采用分子动力学(MD)方法,模拟计算了聚氨酯(Estane 5703),三元乙丙橡胶(EPDM),氟聚物(F2311)三种高聚物分子分别与2,6-双(苦氨基)-3,5-二硝基吡啶(PYX)(011)晶面构建的高聚物粘结炸药(PBXs)体系的结合能,内聚能密度,径向分布函数以及力学性能.结果表明,Estane 5703与PYX(011)晶面之间相互作用最强;不同粘结剂与晶体之间的内聚能密度大小顺序为PYX/F2311> PYX/Estane 5703> PYX/EPDM;径向分布函数分析可知PYX(011)晶面与高聚物分子间的相互作用主要为静电相互作用;添加3种粘结剂后PBX体系的拉伸强度和断裂强度都得到了改善,而除了F2311外,加入另外两种粘结剂后,提高了PBX体系的抗剪切应变能力.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

一种有场旋转和集中功能的新型多功能电磁器件的设计与研究

基于变换光学理论设计了一种新型的多功能电磁器件—旋转集中器.它以特殊的方式引导电磁波使其传播方向在器件核心区发生指定角度的旋转,并同时实现电磁场能量向该核心区的集中.针对提出的三种等效的旋转集中器结构,分别推导了相应的本构参数表达式,并利用有限元软件对三种结构分别进行了全波仿真.仿真结果验证了本构参数表达式的正确性.这三种不同的结构中,前两种结构由三层介质构成,后一种简化为两层介质.对于给定的任意旋转角度和能量集中率,三种结构可以使电磁场发生等效的传播方向旋转和能量集中两种效果.这些结果有助于对旋转器和集中器机理的进一步理解,并为复合功能器件的设计奠定了更充分的理论基础.本文提出的旋转集中器在设计高效率接收天线和特殊电路封装互联器件等方面都有潜在的应用前景.     

锑掺杂氧化锡粉体的太赫兹透射特性

以SnCl45H2O和SbCl3为原料,采用液相化学共沉淀法制备锑掺杂氧化锡（ATO）粉体。分析了不同Sb掺杂质量分数条件下,ATO粉体的禁带宽度变化,并对材料在0.2~1.6 THz波段的透射时域和频域谱,以及吸收和屏蔽参数进行了对比分析。结果表明,ATO粉体的禁带宽度随着Sb掺杂量的增加先减小后增大;同时,ATO粉体对THz波的吸收系数随着Sb掺杂量的增加先增大后减小,当Sb掺杂质量分数为9%时,ATO的吸收系数在1.25 THz处达到最大值156.5 cm-1,屏蔽效能在1.24~1.60 THz范围内最高达到45.0 dB。