Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

ZnO nanorod arrays with tunable size and field emission properties on an ITO substrate achieved by an electrodeposition method

In the present work,vertically aligned ZnO nanorod arrays with tunable size are successfully synthesized on nonseeded ITO glass substrates by a simple electrodeposition method.The effect of growth conditions on the phase,morphology,and orientation of the products are studied in detail by X-ray diffraction(XRD),scanning electron microscopy(SEM),and transmission electron microscopy(TEM).It is observed that the as-prepared nanostructures exhibit a preferred orientation along c axis,and the size and density of the ZnO nanorod can be controlled by changing the concentration of ZnCl2.Field emission properties of the as-synthesized samples with different diameters are also studied,and the results show that the nanorod arrays with a smaller diameter and appropriate rod density exhibit better emission properties.The ZnO nanorod arrays show a potential application in field emitters.     

Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H₂O-based HfO₂ increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O₃-based HfO₂ decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H₂O-based and O₃-based HfO₂ films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO₂ and SiO₂ after annealing may lead the VBO values of H₂O-based and O₃-based HfO₂ to vary in different ways, which is in agreement with the varition of flat band (V_FB) voltage.     

Spectroscopic properties of thulium ions in bismuth silicate glass

A new type of bismuth silicate glass (Bi2O3-SiO2-ZnO-Al2O3-La2O3) doped with Tm2O3 is prepared by melt-quenching method. The thermal stability of the glass is examined by differential scanning calorimetry. No crystallization peak is found. Using the absorption and emission spectra, the absorption and emission cross-sections are calculated. Their maximum data are 2.9×10-21cm2 at 1663 nm and 4.7×10-21cm2 at 1826 nm, respectively. Using the Judd-Ofelt theory, the radiation transition probabilities and radiative lifetimes are obtained. The extended overlap integral method is applied to analyze energy transfer process among the Tm3+ ions. The transfer constants of cross-relaxation and energy migration among the Tm3+ ions at the 3H4 level are 7.60×10-40 and 14.98×10-40 cm6 /s, respectively. The critical transfer radius for cross-relaxation is 0.99 nm. The cross relaxation process is easy to realize and is favorable for obtaining ～2-μm laser.     

Comparative spectroscopic investigation of Yb3x Y3(1 ? x )Al5O12 (x = 3, 5, 10 and 15%) transparent ceramics

Transparent Yb_3x Y_{3(1 ? x} )Al₅O₁₂ (x = 3, 5, 10 and 15%) ceramics were fabricated by solid-state reaction and vacuum sintering method with a mixture of commercial Al₂O₃, Y₂O₃ and Yb₂O₃ powders. Ethanol and 0.5 wt % tetraethoxysilane were doped. Transparent fully dense samples with grain sizes of several micrometers were obtained by sintered at 1750 K. The absorption spectra, emission spectra and fluorescence life time of these transparent Yb_3x Y_{3(1 ? x} )Al₅O₁₂ ceramics at room temperature have been measured and calculated. The air annealed effects of Yb_3x Y_{3(1 ? x} )Al₅O₁₂ ceramics have been compared with un-annealed Yb:YAG transparent ceramics which shows the difference of the Yb³⁺ ions between annealed and unannealed Yb:YAG ceramics is less than 1%.     

连续纠缠态表象的几种Schmidt分解、物理意义与应用

在两粒子连续纠缠态表象|η〉的基础上分别导出了此纠缠态在坐标、动量表象和粒子数表象中的Schmidt分解,阐述了其物理意义.并且,用|η〉的Schmidt分解直接给出单模压缩算符对纠缠态的作用结果、双模平移算符的纠缠态表象以及平移算符在Fock空间的矩阵元.文章的讨论可以推广到多粒子连续纠缠态情形.     

Bounds for pairs in judicious partitioning of graphs

In 2002, Bollobás and Scott posed the following problem: for an integer and a graph G of m edges, what is the smallest f (k, m ) such that V (G ) can be partitioned into V ₁,…,V _k in which for all , where denotes the number of edges with both ends in ? In this paper, we solve this problem asymptotically by showing that . We also show that V (G ) can be partitioned into such that for , where Δ denotes the maximum degree of G . This confirms a conjecture of Bollobás and Scott. © 2016 Wiley Periodicals, Inc. Random Struct. Alg., 50, 59–70, 2017     

密度分布对原子核阻止同位旋效应的影响

利用同位旋相关的量子分子动力学（IQMD）模型,分析了中能重离子碰撞过程中相对论平均场和SkyrmeHartrere－Fork等核结构模型给出的核密度分布对原子核阻止的影响。研究表明,从费米能到的较大能量范围内,无论小质量体系还是大质量体系,原子核阻止对同位旋相关的核子－核子碰撞截面都非常灵敏,而不同模型给出的核密度分布对原子核阻止影响不大,说明原子核阻止作为提取同位旋相关核子－核子碰撞截面的灵敏探针是与原子核结构模型无关的。 Influence of densitydistributionwhichisgivenbyRMFandSkyrme－Hartrere－Fork etalnuclearstructuremodelonnuclearstoppinginheavy－ioncollisionsatintermediateenergiesarestudiedbyusingisospin－dependentquantummoleculardynamics(IQMD)model.ResearchshowsthatrangeformtheFermienergytothelargerenergyof 100 Mev/u, for bothsmallandlargemasssystem,nuclearstoppingisfoundtobestronglydependentonthenucleon－nucleoncrosssections,andweaklyondifferentdensitydistribution.ThisshowsthatnuclearstoppingcanbeusedasaprobetoextracttheinformationontheisospindependenceN－Ncrosssectionsandhasnorelationshipwithnuclearstructuremodels.     

基于单次旋转的旋转非对称面形误差绝对检测技术研究

绝对检测技术是剔除干涉仪系统误差进而提高面形检测精度的有效手段。基于单次旋转的绝对检测技术由被测球面绕光轴旋转前后的检测数据,采用基于最小二乘法的Zernike多项式拟合,剔除系统误差,获得被测面的旋转非对称面形误差。详细推导了理论计算公式,分析了单次旋转角度对算法检测精度的影响,并和多次旋转法作了对比,其残差均方根(RMS)值约为1.5nm。该方法只需一次旋转两次检测,在保证检测精度的同时简化了检测过程。     

基于全反射的发光二极管-照明光纤耦合器的设计与研制

光纤照明由于具有成本低、安全性高、便携性好和装饰性强等优势,已经逐渐进入了人们的视野。然而,现阶段的光源[特别是发光二极管(LED)]由于辐射发散角大,与照明光纤的耦合效率普遍较低。为了解决这个问题,根据全反射原理,设计并制作了一种LED-照明光纤耦合器。经过实验验证,该耦合器具有聚光性强、耦合效率高、体积小、制备简便和成本低等优点,是一种能够有效提升LED-光纤耦合效率的方式。