Dielectronic Recombination of Sn^10＋ Ions and Related Satellite Spectra

Based on the multi-configuration Dirac-Fock method, theoretical calculations are carried out for the dielectronic recombination （DR） rate coefficients and the collision excitation rate coefficients of Sn^10＋ ions. It is found that the total DR rate coefficient has its maximum value between 10eV and 100eV and is greater than either the radiative recombination or three-body recombination rate coefficients （the number of free electrons per unit is 10^21 cm^3） for the ease of Te 〉 1 eV. Therefore, DR can strongly influence the ionization balance of laser produced multi-charged tin ions. The related dieleetronie satellite cannot be ignored at low temperature Te 〈 5 eV.     

三电平大功率并联逆变电源在EAST系统中的应用

针对EAST超导托卡马克装置中的等离子体位移快控电源大电流快速响应的要求,采用三电平结合移相PWM多重化技术,实现多组变流器并联运行,提高了变流器的等效开关频率控制性能,从而改善了电流波形品质。分析了快控电源系统的设计方案和控制方法,并针对移相PWM多重化技术,采用Matlab进行了仿真,验证了设计思想。实验结果表明,该系统设计方案合理、控制策略有效,具备良好的大电流输出和快速响应能力。     

Stochastic Simulation of Turing Patterns

We investigate the effects of intrinsic noise on Turing pattern formation near the onset of bifurcation from the homogeneous state to Turing pattern in the reaction-diffusion Brusselator. By performing stochastic simulations of the master equation and using Gillespie＇s algorithm, we check the spatiotemporal behaviour influenced by internal noises. We demonstrate that the patterns of occurrence frequency for the reaction and diffusion pro- cesses are also spatially ordered and temporally stable. Turing patterns are found to be robust against intrinsic fluctuations. Sfochastic simulations also reveal that under the influence of intrinsic noises, the onset of Turing instability is advanced in comparison to that predicted deterministically.     

Surface Plasmon Resonance and Field Enhancement of Au/Ag Alloyed Hollow Nanoshells

We investigate the nanostructure, surface plasmon resonance （SPR） absorption and nonlinear enhancement of Au/Ag alloyed hollow nanoshells prepared by the replacement reaction of Ag nanoparticles in a HAuCI4 aqueous solution. As the volume of HAuCl4 increases from OmL to 0.S mL, the SPR band of the Au/Ag alloyed nanoshells is tuned from 430nm to 780nm, and the third-order nonlinear optical susceptibility is enhanced nearly by an order of magnitude, which indicates a large enhancement of local field in the Au/Ag alloyed hollow nanoshells with hole defects.     

白色荧光粉CaF2∶Yb3+/Eu3+/La3+的制备及其上转换发光特性

采用改进的两步高温固相熔融法制备了Yb^3+、Eu^3+、La^3+共掺杂CaF 2的上转换荧光粉。基于荧光猝灭原理,通过改变La^3+掺杂浓度来调节CaF 2∶Yb^3+/Eu^3+材料的发光性能,并在980 nm近红外光激发下,获得了该材料的白色上转换发光(UCL)。在该发光体系中,Yb^3+不仅起到了敏化Eu^3+的作用,同时,Yb^3+二聚体(Yb^3+-dimer)自身合作发出波长范围480~540 nm的绿色荧光。而白光三基色中的绿光正是来自Yb^3+二聚体的合作发光。Eu^3+则作为激活剂,同时发出红色和蓝色荧光。荧光寿命测试结果表明Yb^3+-dimer与Eu^3+之间存在有效的能量传递。值得注意的是,在980 nm激光激发下,1%La^3+掺杂的样品表现出最佳的红、绿、蓝三基色光比列,实现了材料的上转换白光发射,其色度坐标为(0.311,0.340)。     

无源空心波导谐振腔横模模式的竞争与转换

本文提出并采用非对角化的分析法研究无源空心波导谐振腔横模模式间的竞争与转换。从计算EH_(1m)类波导本征模在腔内的转换矩阵中发现:在模式的传输过程中,存在着横模模式间的相互转换,而且其互换的能量不相等。在一定的腔设计条件下,会出现高阶横模向低阶横模的能量净流动,这有利于谐振腔横模模式的选择和基模输出功率的提高。     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。