Breather Lattice Solutions to Negative mKdV Equation

In this paper, dependent and independent variable transformations are introduced to solve the negative mKdV equation systematically by using the knowledge of elliptic equation and Jacobian elliptic functions. It is shown that different kinds of solutions can be obtained to the negative mKdV equation, including breather lattice solution and periodic wave solution.     

Introduction to the overall physics design of CSNS accelerators

The China Spallation Neutron Source (CSNS) is an accelerator-based facility. The     

High-Order Above-Threshold Ionization of H2+ in Intense Laser Field

The nonperturbative quantum electrodynamies method proposed by Fu et al. [Phys. Rev. A 75 （2007） 063419] is employed to study the high-order above-threshold ionization （ATI） of a diatomic molecule. Based on this frequency-domain theory, the high-order ATI process can be regarded as ATI followed by laser-assisted collision, where the total transition amplitude is the coherent summation of the contributions from each ATI channel. The angular-resolved ATI spectrum, which agrees with the results by Becket et al. based on the time-domain method, is obtained by this frequency domain theory. Furthermore, it is demonstrated that the interference characteristics representing the molecular structure in the ATI spectrum originates from the recollision of the electron with two-centre ion in each ATI channel.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Phase-Transition and Magnetic Moment of the Gd3+ Ion in the Gd2Fe17 Compound

The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound： the hexagonal Th2Nilr-type structure at high temperatures （above 1243℃）, and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented.     

Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.     

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.     

生物质合成气一步法合成二甲醚的在线分析系统

建立了一套由生物质合成气一步法制取二甲醚的在线分析系统.针对生物质合成气一步法合成二甲醚特征,采用两台分别装有TCD和FID检测器的色谱仪分析反应产物.利用原料气中N2作为内标物,来确定TCD上检测到的永久性气体组分浓度;通过CH4作内标物,来确定FID上检测到的有机物组分浓度.TCD和FID之间通过CH4来关联,从而确定反应产物中主要组分的浓度.该系统在压力3 MPa,温度250℃,空速(流速与催化剂体积的比值)分别为1 000、2 000、3 000 h-1的条件下用C306和HZSM-5催化剂进行评价测试,发现系统分析效果好,重复性高,并且反应前后主产物碳平衡到达90%以上.     

FTIR-ATR技术考察TiO2膜对油酸的光催化氧化性能

采用Sol-Gel和PVD法在玻璃、陶瓷、铝片表面制备出TiO2膜,直接将食用油中的主成分油酸用溶剂稀释后均匀涂在膜表面,采用FTIR-ATR技术实现了对膜样品光催化自清洁性能的快速准确评价,并通过测量水的接触角评价了膜的亲水性。结果表明,Sol-Gel法和PVD法制备的TiO2/玻璃膜都具有较好的光致亲水性和光催化降解油酸性能,两者的亲水性没有明显差别,但前者的光催化活性稍优于后者。比较Sol-Gel法制备的TiO2/玻璃、TiO2/陶瓷和TiO2/铝片膜对油酸的光催化降解性能发现,光照3·5h后3个样品的降解率分别为92%,85%和46%,表明基底材料性质对TiO2膜的光催化活性有明显影响,镀在非导电性玻璃和陶瓷表面的TiO2膜比镀在导电性金属铝表面的TiO2膜对油酸有更高的光催化降解能力。     

结晶型聚合物注塑过程冷却模型的数值模拟

对HDPE平板状注塑件的冷却过程进行了数值模拟 .基于小分子结晶性物质的冷却模型 ,建立了固相、液相及固液相界面的控制方程 ,方程中引入热焓E和参数T 后 ,将带耦合条件的热传导方程转变为非线性抛物型方程 ,按控制容积法将其离散后 ,用数学软件Matlab获得了PE的三维温度场 ,这为探讨带相转变的热传导问题提供了一种有效的数值方法 .通过对制件芯层温度变化的模拟值与实验值的比较 ,比较了不同相变温度下理论结果的准确性 ,结果表明 ,在引入一定过冷度后 ,将相变温度定义在低于平衡熔点以下时 ,该方法的模拟值具有更好的准确性 .同时 ,模型分析了不同工艺条件对制件芯层冷却过程的影响 ,通过相变平台出现的先后以及终止时间的不同 ,说明充模温度主要影响熔体阶段的冷却以及相变出现的先后 ,而模具温度主要影响固体阶段的冷却以及相变平台终止的先后 .