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931.
932.
933.
本文介绍了在自行研制的选择性非催化还原(SNCR)烟气脱硝试验台上采用改进型TB系列喷嘴深入烟道内部逆流喷入的方式,进行了冷态混合试验和气态氨作还原剂及CH4作添加剂的热态脱硝试验.深入烟道内部的喷入方式在提高喷入气体与烟道主气流的混合效果上明显优于侧壁圆孔喷入.在NH3/NOx=1.25,反应温度为925℃时可得到82.53%的脱硝效率,有CH4作添加剂时,温度为875℃时可得到72.37%的脱硝效率.以NOx去除率高于50%为标准,温度窗口为863~937℃;有CH4作添加剂的温度窗口为803~929℃.随着氨氮比的增大NOx去除效率也增大,但在最优温度下当氨氮比大于1.0后NOx去除率的增大不再明显.随着温度的升高,达到NOx最大去除率所需的CH4添加量减小,CH4作添加剂可大大减小氨的泄漏量. 相似文献
934.
935.
In this paper, dependent and independent variable transformations are introduced to solve the negative mKdV equation systematically by using the knowledge of elliptic equation and Jacobian elliptic functions. It is shown that different kinds of solutions can be obtained to the negative mKdV equation, including breather lattice solution and periodic wave solution. 相似文献
936.
937.
The nonperturbative quantum electrodynamies method proposed by Fu et al. [Phys. Rev. A 75 (2007) 063419] is employed to study the high-order above-threshold ionization (ATI) of a diatomic molecule. Based on this frequency-domain theory, the high-order ATI process can be regarded as ATI followed by laser-assisted collision, where the total transition amplitude is the coherent summation of the contributions from each ATI channel. The angular-resolved ATI spectrum, which agrees with the results by Becket et al. based on the time-domain method, is obtained by this frequency domain theory. Furthermore, it is demonstrated that the interference characteristics representing the molecular structure in the ATI spectrum originates from the recollision of the electron with two-centre ion in each ATI channel. 相似文献
938.
Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates
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Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton (A^0X) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO:P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature. 相似文献
939.
The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound: the hexagonal Th2Nilr-type structure at high temperatures (above 1243℃), and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented. 相似文献
940.
We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth. 相似文献