SWITRIM��������ƺ�ʹ�øſ�

研制出了用于计算氚投料量在FEB聚变堆各个子系统中的分布及其随时间变化的数值模拟程序包SWITRIM。通过近5年的使用，表明其运行良好、计算结果可靠。用SWITRIM数值模拟研究了聚变堆起动过程中的“氚坑深度和氚坑时间”新现象。简单介绍了SWITRIM程序包的组成和用户使用说明以及最新的运用等。     

The uv-Decomposition on a Class of D.C. Functions and Optimality Conditions

In this paper,the UV-theory and P-differential calculus are employed to study second-order ex-pansion of a class of D.C.functions and minimization problems.Under certain conditions,some properties ofthe U-Lagrangian,the second-order expansion of this class of functions along some trajectories are formulated.Some first and second order optimality conditions for the class of D.C.optimization problems are given.     

Sansalvamide A固相合成新方法

报道了Pd催化丁基二乙基硅烷树脂与N-Boc-4-溴代苯丙氨酸甲酯直接反应形成Si—Ar键一步构建出硅基连接分子的新方法, 并采用Boc策略增长肽链, 以PyBOP (benzotriazole-1-yl-oxy-tris-pyrrolidino-phosphonium hexafluoro- phosphate)为环合剂固相合成了sansalvamide A.     

QUATERNION GENERALIZED SINGULAR VALUE DECOMPOSITION AND ITS APPLICATIONS

This paper derives a theorem of generalized singular value decomposition of quaternion matrices （QGSVD）,studies the solution of general quaternion matrix equation AXB -CYD= E,and obtains quaternionic Roth＇s theorem. This paper also suggests sufficient and necessary conditions for the existence and uniqueness of solutions and explicit forms of the solutions of the equation.     

两指标双F统计过程控制图

当产品质量指标服从二元正态分时,可用T2控制图与Λ控制图联合判断产品生产的过程是否处于受控状态。本文利用T2统计量与F统计量、Λ统计量与F统计量之间的关系,得到了两指标情形下两类基于F分布统计量的统计过程控制图,简称双F统计过程控制图,并给出了控制图应用实例。     

Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.