AxMn1-xFe2O4铁氧体(A=Zn,Ni)中阳离子的占位有序化行为研究

基于尖晶石晶体结构信息,本文采用热力学三亚晶格模型,将材料热力学计算和第一性原理计算相结合,研究了Zn_xMn_(1-x) Fe_2O_4和Ni_xMn_(1-x)Fe_2O_4立方相中的Zn~(2+)、Ni~(2+)、Mn~(2+)以及Fe~(3+)在8a和16d亚晶格上的占位有序化行为。结果表明:在锰铁氧体中,室温下Mn~(2+)完全占据在8a亚晶格上,Fe~(3+)完全占据在16d亚晶格上,属于正尖晶石结构;随着热处理温度升高,在1 273 K达到热处理平衡时的占位构型为(Fe~(3+)0.09Mn~(2+)0.91)[Fe~(3+)1.91Mn~(2+)0.09]O_4,在热处理温度升至1 473 K时,达到热处理平衡时的占位构型为(Fe~(3+)0.11Mn~(2+)0.89)[Fe~(3+)1.89Mn~(2+)0.11]O_4,均与实验结果符合较好。在锌铁氧体中,室温下Zn~(2+)完全占据在8a亚晶格上,Fe~(3+)完全占据在16d亚晶格上,属于正尖晶石结构;在热处理温度较高时,Zn~(2+)和Fe~(3+)发生部分置换,符合实验结果。在镍铁氧体中,半数的Fe~(3+)在室温下占据在8a亚晶格上,Ni~(2+)与剩下另一半的Fe~(3+)共同占据在16d亚晶格上,仅在热处理温度较高的时候发生微弱变化,亦与已有的实验结果吻合。在此基础上,本文进一步通过热力学模型研究了立方相尖晶石结构的Zn_xMn_(1-x)Fe_2O_4、Ni_xMn_(1-x)Fe_2O_4复合体系中阳离子占位行为与热处理温度对占位的影响规律。     

作图法研究物理实验数据处理中的线性回归问题

用作图的方法研究物理实验数据处理中的一元线性回归问题,通过作回归直线和标准差平行四边形,求出线性回归方程标准差和相关系数。     

自制音叉的对称性与非对称性破坏性实验研究

文中对自制对称正型音叉与自制非对称异型音叉受力F后音叉产生的振动的现象进行了研究,用DIS声传感数字化信息系统采集振动频率,研究频率与音叉叉股长度的关系,从而对音叉叉股对称与非对称的情况进行研究。     

20MPixel/s高速红外焦平面读出电路设计

针对中大规模红外焦平面对高速读出的需求,研究并设计了一款20MPixel/s红外焦平面高速读出电路。读出电路单元电路由电容负反馈运放输入级、相关双采样、源随输出级电路组成,总线输出级采用基于低功耗推挽运放的跟随器结构。研究了输出级运放像元信号建立时间和负载电容的关系,给出了20 MPixel/s高速读出的负载电容适用范围。采用0.5μm Mixed Signal CMOS工艺研制了一款红外焦平面高速读出电路芯片,和InGaAs光敏芯片耦合后实测读出速率达到20MPixel/s,像元信号之间最大上升时间为17ns。     

化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD）,气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明,锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构;扫描电子显微镜（SEM）测试结果表明,Zn₂GeO₄纳米线直径为100 nm,长度为10~11 μm;光致发光（PL）测试结果表明,Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。     

GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.     

Effects of Carrier Gas on Carbon Incorporation in GaN

GaN epitaxial layers were grown on Si （111） substrates by metal organic chemical vapor deposition. Carbon concentrations in the films grown in different ambients were measured by secondary ion mass spectrometry. The results show that the carbon incorporation is strongly dependent on the H2 flow rate when the NH3 flow rate is small, but insensitive to the H2 flow rate when the NH3 flow rate is sufficient large. We conclude that H2 can inhibit the dissociation of NH3 and result in a less active N source; an insufficiently active N source causes more N vacancies, which enhances carbon incorporation.     

Hadronic Scenarios for Gamma-Ray Emission from Three Supernova Remnants Interacting with Molecular Clouds

GeV γ-rays detected with the large area telescope on board the Fermi Gamma-ray space telescope in the direc- tion of HB21, MSH 17-39 and G337.0-0.1 have been recently reported. The three supernova remnants （SNRs） show interactions with molecular clouds, and they are effective gamma-ray emitters as the relativistic protons accelerated by the SNR shocks inelastically colliding with the dense gas in the clouds. The origin of the observed γ-rays for the three remnants is investigated in the scenario of the diffusive shock acceleration. In the model, a part of the SNR shock transmits into the nearby molecular clouds, and the shock velocity is greatly reduced. As a result, a shock with a relatively low Alfven Mach number is generated, and the spectra of the accelerated protons and thee＇γ-ray photons produced via proton-proton interaction can be obtained. The results show that the observed γ-ray spectra for the three SNRs interacting with the molecular clouds can be reproduced. It can be concluded that the hadronic origin of the γ-rays for the three SNRs is approved, and the ability of SNR shocks to accelerate protons is also supported.     

Hg2CuTi型Heusler合金Mn2NiB马氏体相变微观机理的研究

运用基于密度泛函理论的第一性原理方法,研究了Hg2 CuTi型Heusler合金Mn2 NiB马氏体相变的微观机理。研究表明：伴随着Mn2 NiB马氏体相变的发生,产生了拉长型八面体的畸变。此畸变先是由中心离子Mn的t2g轨道电子的非均匀占据而导致的弱Jahn－Teller效应来驱动。随着畸变的进行, Mn离子的孤对电子由dx2－y2轨道转移到dxy轨道, x、y方向的配体受到的推斥力减小而内移,进一步加剧这一畸变过程,使得dx2－y2和dxy轨道受到配体的推斥力增加,能级升高,而dz2、dyz和dxz受到的推斥力减少,能级降低,从而消除eg 能级和降低t2g能级的简并,体系能量降低,最终体系畸变到一个稳定的马氏体相。     

以PVP纳米纤维为模板采用原子层沉积法制备MgxZn1-xO纳米纤维及其光学性质研究

采用静电纺丝方法制备聚乙烯吡咯烷酮(PVP)纳米纤维,并以其为模板采用原子层沉积(ALD)方法制备不同Mg掺杂浓度的MgxZn1-xO纳米纤维。研究了不同Mg掺杂浓度对复合纳米纤维结构和光学性质的影响。利用场发射扫描电子显微镜(FESEM)、光致发光(PL)和紫外-可见光(UV-Vis)吸收谱对样品测试并进行表征分析。结果表明,Mg元素的掺入并没有改变ZnO纳米纤维的形貌,所有样品的表面形貌极其相似,只是掺杂后纤维直径有所增大;随着Mg掺杂浓度的增加吸收边逐渐发生蓝移,表明所制备MgxZn1-xO纤维的带隙具有可调节性。与此同时,在PL谱中可以观察到样品的紫外(UV)发光峰从377nm移动至362nm,且与不掺杂的样品相比,MgxZn1-xO纳米纤维的UV发光强度明显增强。通过这种方法可以合成组分可控的MgxZn1-xO纳米纤维。在ZnO中掺入Mg元素可以有效地提高ZnO-PVP纳米纤维的禁带宽度以及UV发射强度。