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991.
The forced magnetostriction and magnetization are measured in the easy-plane-type two-sublattice NiCl2 antiferromagnet (AFM) in the case where this AFM passes from the multidomain to a single-domain state. It is shown that, in accordance with the magnetoelastic nature of the multidomain state, the field dependences of the forced magnetostriction and magnetization are interrelated and affected by the transition from the multidomain to the single-domain state. The character of these dependences corresponds to the case where the magnetization and striction are proportional to the number of domains with an energetically favored orientation with respect to the external magnetic field.  相似文献   
992.
The results obtained upon the electrochemical deposition of composite coatings containing ultrafine-dispersed diamonds produced by detonation synthesis are generalized. The main advantages of such coatings over the well-known composite electrochemical coatings are revealed.  相似文献   
993.
The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er3+ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 μm. Possible reasons for the high excitation efficiency of the Er3+ ions are discussed, and the conclusion is drawn that the F?rster mechanism is dominant in the energy transfer processes occurring in these structures. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 105–109. Original Russian Text Copyright ? 2004 by Kashkarov, Kamenev, Lisachenko, Shalygina, Timoshenko, Schmidt, Heitmann, Zacharias.  相似文献   
994.
A comparative analysis of the stability factors and electronic structure of two possible crystalline forms of small fullerene C28 and endohedral fullerene Zn@C28 with diamond and lonsdaleite structures is performed using a cluster model. Atoms of elements that, when placed inside C28 cages, have no significant effect on the stability of free small-fullerene molecules are shown to be able to dramatically change the electronic properties and reactivity of the C28 skeleton and to be favorable for forming small-fullerene crystalline modifications, which are covalent crystals. In contrast, if the presence of foreign atoms inside C28 cages stabilizes the isolated nanoparticles, then molecular crystals (such as C60 fullerites) are formed due to weak van der Waals forces.  相似文献   
995.
Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm3, a density of the discharge current at the anode of up to 3 kA/cm2, and specific energy deposition of ∼1 J/cm3 over 3 to 5 ns is created.  相似文献   
996.
In the present paper, the probability of creating pairs of scalar particles in an arbitrary plane electromagnetic wave field is calculated. The amplitude of elastic photon scattering in the field of an arbitrary plane electromagnetic wave is calculated by the method of dispersion relations. Special cases of the plane electromagnetic wave field are examined.  相似文献   
997.
The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs2 are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.  相似文献   
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