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81.
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc  相似文献   
82.
83.
In this Note, we study a 2×2 system of evolution equations with some codimension 3 crossing. We derive two conditions of non-degeneracy. We focus on one of them and reduce our system to some Landau–Zener's type system. Using this reduction, we describe the energy transfer at the crossing by Landau–Zener formula for 2-scales semi-classical measures. To cite this article: C. Fermanian Kammerer, P. Gérard, C. R. Acad. Sci. Paris, Ser. I 335 (2002) 915–920.  相似文献   
84.
85.
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study the Gibbsian character of the measure νS(t) at time t and show the following: (1) For all ν and μ, νS(t) is Gibbs for small t. (2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0. (3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t. (4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t. The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios. Received: 26 April 2001 / Accepted: 10 October 2001  相似文献   
86.
Algebraic methods in quantum mechanics: from molecules to polymers   总被引:2,自引:0,他引:2  
We present a brief review of algebraic techniques developed and applied in molecular spectroscopy in the last five years. We also outline perspectives for new applications of the Lie algebraic method in the first decade of the new century. Received 21 November 2001  相似文献   
87.
Diffraction by a semitransparent screen is considered in the framework of the nonlinear Schrödinger equation. The case of a defocusing medium is investigated. The method used represents a synthesis of the method of Riemann's matrix problem and the technique of Whitham's deformations of spectral curves.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova, Vol. 179, pp. 23–31, 1989.  相似文献   
88.
Under idealized conditions, electroconvection in a nematic liquid crystal sets in at a well-defined threshold of the driving ac voltage. Fluctuating convection rolls of a small amplitude below that threshold have been observed recently. The measurement of the amplitude of these fluctuations is described in detail in this paper. It is based on averaging the light intensity signals using the structure function and a quantitative analysis of the light deflection.  相似文献   
89.
90.
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