Formal degree and existence of stable arithmetic lattices of cuspidal representations ofp-adic reductive groups

Research at MSRI supported in part by NSF Grant DMS-812079-05     

Influence of internal degrees of freedom on the structure of one-dimensional systems

Summary The influence of internal degrees of freedom on the behaviour of one-dimensional systems is discussed. For systems with half-filled bands the coupling to internalviz. lattice coordinates decides whether Peierls distortion is caused by intramonomer coordinates or by a lattice coordinate. Thereby the various intramonomer degrees of freedom act cooperatively. We show that there is a small regime of parameters where both kinds of distortion exist simultaneously. For increasing temperature we find that distortions can also move from the lattice coordinate to the intramonomer coordinate.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

ICLAS of weak transitions of water between 11 300 and 12 850 cm: Comparison with FTS databases

Very weak water vapor absorption lines have been investigated by intracavity laser absorption spectroscopy (ICLAS) in the 11 335-11 947 and 12 336-12 843 cm⁻¹ spectral regions dominated by the ν₁ + 3ν₂ + ν₃ and ν₂ + 3ν₃ bands, respectively. A detectivity on the order of α_min ∼ 10⁻⁹ cm⁻¹ was achieved with an ICLAS spectrometer based on a Ti: Sapphire laser. It allowed detecting transitions with an intensity down to 5 × 10⁻²⁸ cm/molecule which is about 10 times lower than the weakest line intensities previously detected in the considered region. A line list corresponding to 1281 transitions with intensity lower than 5 × 10⁻²⁶ cm/molecule has been generated. A detailed comparison with the line lists provided by the HITRAN database and by recent investigations by Fourier transform spectroscopy associated with very long multi pass cell is presented. The rovibrational assignment performed on the basis of the ab initio calculations of Schwenke and Partridge, has allowed for determining 176 new energy levels belonging to a total of 16 vibrational states.     

An elementary proof of the uniqueness of invariant product measures for some infinite dimensional processesUne preuve élémentaire de l'unicité des mesures invariantes produits pour certains processus en dimension infinie

Consider an infinite dimensional diffusion process with state space , where T is the circle, and defined by an infinitesimal generator L which acts on local functions f as . Suppose that the coefficients a_i and b_i are smooth, bounded, of finite range, have uniformly bounded second order partial derivatives, that a_i are uniformly bounded from below by some strictly positive constant, and that a_i is a function only of η_i. Suppose that there is a product measure ν which is invariant. Then if ν is the Lebesgue measure or if d=1,2, it is the unique invariant measure. Furthermore, if ν is translation invariant, it is the unique invariant, translation invariant measure. The proofs are elementary. Similar results can be proved in the context of an interacting particle system with state space , with uniformly positive bounded flip rates which are finite range. To cite this article: A.F. Ram??rez, C. R. Acad. Sci. Paris, Ser. I 334 (2002) 139–144     

Envelope expansion methods for speech enhancement

The last decade has seen increasing interest in techniques for the enhancement of digital speech signals. Significant gains have been made in terms of signal-to-noise ratio (SNR) and quality, but few techniques have produced improvements in intelligibility. A method for speech enhancement based on nonlinear expansion of the spectral envelope is presented. The expansion is consistent with both the long-term spectrum of the speech and with the probability that speech is present in a given sample. Objective SNR measures are used to compare this algorithm with the well-known spectral subtraction method, with an alternative expansion scheme, and with limiting SNRs resulting from perfect recovery of the amplitude spectrum. For the purpose of intelligibility assessments, a simplified version of the algorithm has been implemented on a Texas Instruments TMS320-C25 system. Listening trials with this real-time system, conducted using a modified rhyme test, have produced small, but consistent, improvements in articulation scores.     

Extremal positive and self-adjoint extensions of suboperators

This work is supported in part by the fund OTKA (No. 5-134).     

Implicit difference approximation for the time fractional diffusion equation

In this paper, we consider a time fractional diffusion equation on a finite domain. The equation is obtained from the standard diffusion equation by replacing the first-order time derivative by a fractional derivative (of order 0 < α < 1 ). We propose a computationally effective implicit difference approximation to solve the time fractional diffusion equation. Stability and convergence of the method are discussed. We prove that the implicit difference approximation (IDA) is unconditionally stable, and the IDA is convergent withO(Τ +h ²), where Τ andh are time and space steps, respectively. Some numerical examples are presented to show the application of the present technique.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.