Zur algebraischen Geometrie. XV

Ohne Zusammenfassung     

Beryllium (boron) clustering quest in relativistic multifragmentation (BECQUEREL Project)

A physical program of irradiation of emulsions in beams of relativistic nuclei named the BECQUEREL Project is reviewed. It is destined to study in detail the processes of relativistic fragmentation of light radioactive and stable nuclei. The expected results would make it possible to answer some topical questions concerning the cluster structure of light nuclei. Owing to the best spatial resolution, the nuclear emulsions would enable one to obtain unique and evident results. The most important irradiations will be performed in the secondary beams of He, Be, B, C, and N radioactive nuclei formed on the basis of JINR Nuclotron beams of stable nuclei. We present results on the charged state topology of relativistic fragmentation of the ¹⁰B nucleus at low energy-momentum transfers as the first step of the research.     

Synthesis and properties of the nanocomposite of zink oxide and poly(amic acid)

The composite comprised of zinc oxide quantum dots and poly(amic acid) (PAAc) was prepared and studied by X-rays diffraction, X-ray photoelectron spectroscopy, light scattering, UV absorbance and UV fluorescence. The UV absorbance of the ZnO/PAAc composite was found to be much larger than that of its components taken separately. The fluorescence of the ZnO/PAAc composite was found to be shifted to longer wavelengthes in comparison with pure ZnO. The presence of the dopant dodecylbenzenesulfonic acid was found to affect the observed fluorescence.     

A versatile protocol for the preparation of substituted 1- and 2-naphthyl piperazines from aminonaphthols

Aminonaphthols are easily transformed into a variety of 1- and 2-naphthyl piperazines using a sequence of diazotization, iodide substitution and Pd(0) catalyzed coupling reactions.     

effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.