A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

Small amplitude approximation and stabilities for dislocation motion in a superlattice

Starting from the traveling wave solution, in small amplitude approximation, the Sine-Gordon equation can be re- duced to a generalized Duffing equation to describe the dislocation motion in a superlattice, and the phase plane properties of the system phase plane are described in the absence of an applied field. The stabilities are also discussed in the presence of an applied field. It is pointed out that the separatrix orbit describing the dislocation motion as the kink wave may transfer the energy along the dislocation line, keep its form unchanged, and reveal the soliton wave properties of the dislocation motion. It is stressed that the dislocation motion process is the energy transfer and release process, and the system is stable when its energy is minimum.     

Analytical periodic motions in a parametrically excited, nonlinear rotating blade

The stability and bifurcation analyses of periodic motions in a rotating blade subject to a torsional excitation are investigated. For high speed rotations, cubic geometric nonlinearity and gyroscopic effects of the rotating blade are considered. From the Galerkin method, the partial differential equation of the nonlinear rotating blade is simplified to the ordinary differential equations, and periodic motions and stability of the rotating blade are studied by the generalized harmonic balance method. The analytical and numerical results of periodic solutions are compared. The rich dynamics and co-existing periodic solutions of the nonlinear rotating blades are investigated.     

The Monte-Carlo simulation on a scintillator neutron detector

A simulation of the properties of the shifting scintillator neutron detector using 6LiF/ZnS(Ag) scintillation screens is performed.The simulation results show that the light attenuation length of standard BC704 scintillator is about 0.65 mm.Its thermal neutron detection efficiency,gamma sensitivity and intrinsic spatial resolution can achieve around 50.0%,10 5and 0.18 mm(along X-axis) respectively.For the detector,air coupling position resolution is better than the silicone oil coupling.Some of the simulation results are compared with experimental results.They are in agreement.This work will be helpful for constructing neutron detector for high intensity powder diffractometer at Chinese spallation neutron source.     

Faithful Transfer Arbitrary Pure States with Mixed Resources

In this paper, we show that some special mixed quantum resource experience the same property of pure entanglement such as Bell state for quantum teleportation. It is shown that one mixed state and three bits of classical communication cost can be used to teleport one unknown qubit compared with two bits via pure resources. The schemes are easily implement with model physical techniques. Moreover, these resources are also optimal and typical for faithfully remotely prepare an arbitrary qubit, two-qubit and three-qubit states with mixed quantum resources. Our schemes are completed as same as those with pure quantum entanglement resources except only 1 bit additional classical communication cost required. The success probability is independent of the form of the mixed resources.     

快速多极边界元法用于扩散光学断层成像研究

在求解扩散光学断层成像中的正向问题时, 目前普遍采用有限元法, 但是随着实际模型规模的增大, 有限元法的计算量问题日益显著, 而边界元法则由于可以降低计算维度使计算量减少而备受关注. 本文以均匀的高散射介质为模型, 研究了将快速多极边界元法用于扩散光学断层成像的正向问题. 快速多极边界元法利用核函数的多极展开, 将常规边界元法中系数矩阵和迭代矢量的乘积项等价为相应四叉树结构的一次递归, 再结合广义最小残量法进行迭代求解. 将计算结果和蒙特卡罗法的模拟结果进行了比较, 表明利用快速多极边界元法的模拟结果和蒙特卡罗法的结果有很好的一致性. 研究结果验证了快速多极边界元法可以用于扩散光学断层成像, 为其大规模和实时成像带来可观的前景. 关键词： 扩散光学断层成像 边界元法 快速多极边界元法     

Lagrange系统一类新型的非Noether绝热不变量——Lutzky型绝热不变量

研究了Lagrange系统的Lie对称性摄动与新型的非Noether绝热不变量. 列出了未受扰Lagrange系统的Lie对称性导致的Lutzky型精确不变量；基于力学系统的高阶绝热不变量的定义，研究在小扰动作用下Lagrange系统Lie对称性的摄动，得到了系统的一类Lutzky形式的绝热不变量.举例说明方法和结果的应用.     

同时实现介电常数和磁导率为负的H型结构单元左手材料

基于用一种结构同时实现材料介电常数和磁导率为负的思想，提出了H型结构单元左手材料模型.采用矩形波导法测试表明，H型结构单元在微波频率范围出现左手透射峰，并且可以由参数t对左手特性区域进行调控.同时利用相位法、棱镜折射法和散射参量法从实验和理论证明了在左手透射峰区域材料的折射率为负值，介电常数和磁导率亦同时为负.相对由金属开口谐振环与金属线两种结构组合实现的左手材料，H型结构集磁谐振与电谐振于一体，结构简单、制备方便，对微波器件左手材料表现出更多的优越性.     

高速粒子场同轴Fraunhofer全息数据处理系统研究

介绍了用同轴Fraunhofer全息测量强动载下材料表面微喷射粒子场的数据处理方法.在全息像重建过程中，将再现的三维粒子场由计算机控制分成许多小薄层采集.在数据处理过程中根据图像中粒子边缘，决定在整幅图或局部采用边缘检测的方法提取大粒子，根据图像的灰度分布将图像分成很多小区域，在每个小区域采用不同的阈值分割图像.在处理结果的校正中根据粒子场的特点，去除过大、过小和重复统计粒子.采用该方法得到了粒子的空间分布图像及粒子大小的统计结果.