Effects of gamma-ray irradiation on the electrical characteristics of Al
2O
3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance–voltage (
C–
V) and conductance–voltage (
G/
ω–
V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays.
C–
V and
G/
ω–
V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and
C–
V and G/
ω curves has been shifted toward the negative voltages. Moreover, the series resistance (
R s) and density of interface states increased with increasing in irradiation dose and density of interface states (
D it) were calculated as order of 10
12 eV
?1cm
?2 prior to and after irradiation. Due to presence and variations in the
R s values, the corrected and the measured
C–
V and
G/
ω–
V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected
C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.
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