Effects of OCRA parameters and learning rate on machine scheduling

Central European Journal of Operations Research - In this paper, the effects of Occupational Repetitive Actions (OCRA) parameters, learning rate on process times, and machine scheduling were...     

Investigation of angucycline compounds as potential drug candidates against SARS Cov-2 main protease using docking and molecular dynamic approaches

Molecular Diversity - The emerged Coronavirus disease (COVID-19) causes severe or even fatal respiratory tract infection, and to date there is no FDA-approved therapeutics or effective treatment...     

First observation of yrastγ-rays in theN=78 nuclei142Gd and141Eu

Excitation function measurements with α-particles and HI-beams clearly attribute the yrast cascade previously proposed for¹⁴²Gd to the¹⁴¹Eu neighbouring nucleus. The so far unknown yrast transitions of¹⁴²Gd have been identified. Coincidence measurements establish the high-spin level schemes of the two nuclei up to 3.2 MeV.     

Substitution kinetics of W(CO)5(η-bis(trimethylsilyl)ethyne) with triphenylbismuthine

The labile complex W(CO)₅(η²-btmse) undergoes replacement of bis(trimethylsilyl)ethyne, btmse, by triphenylbismuthine in cyclohexane solution at an observable rate in the temperature range of 35-50 °C yielding almost solely W(CO)₅(BiPh₃) as the final product. The kinetics of this substitution reaction was studied in cyclohexane solution by quantitative FT-IR spectroscopy. The substitution reaction obeys a pseudo-first-order kinetics with respect to the concentration of the starting complex. The observed rate constant, k_obs, was determined at four different temperatures and three different concentrations of the entering ligand BiPh₃ in the range 16.8-65.4 mM. From the evaluation of kinetic data a possible reaction mechanism was proposed in which the rate determining step is the cleavage of metal-alkyne bond in the complex W(CO)₅(η²-btmse). A rate law was derived from the proposed mechanism. From the dependence of k_obs on the entering ligand concentration, the rate constant k₁ for the rate determining step was estimated at all temperatures. The activation enthalpy (106 ± 2 kJ mol⁻¹) and the activation entropy (111 ± 6 J K⁻¹ mol⁻¹) were determined for this rate determining step from the evaluation of k₁ values at different temperatures. The large positive value of the activation entropy is consistent with the dissociative nature of reaction. The large value of the activation enthalpy, close to the calculated tungsten-alkyne bond dissociation energy, also supports this dissociative rate-determining step of the substitution reaction.     

Bis{[μ‐N,N′‐bis­(salicyl­idene)‐1,4‐butane­di­amine‐N,N′,O,O′‐copper(II)]‐μ‐chloro‐chloromercury(II)}

A new tetranuclear Cu^II–Hg^II–Hg^II–Cu^II complex, [Cu₂Hg₂Cl₄(C₁₈H₁₈N₂O₂)₂], has been prepared by means of a copper complex found in the literature. The molecular structure of this complex was determined by X‐ray diffraction and the Cu–Hg–Hg–Cu chain was seen to be non‐linear. The change in magnetic susceptibility with temperature was recorded for this complex and observed to abide by the Curie–Weiss law. The coordination around the Hg^II ions is square pyramidal. The Cu?Hg bridging distance is 3.5269 (7) Å.     

Chemical characterisations of Anatolian obsidians by instrumental and epithermal neutron activation analysis

Obsidian is a volcanic glass which is generally black, sometimes grey, brown, red or green in colour and characterised by a glassy appearance and conchoidal fractures. It is formed by the sudden cooling of the molten, generally acid magma with high water content. Obsidian was widely used for tool-making during prehistoric times. This work concems the chemical characterisation of obsidian occurrences from Northem, Central and Eastem Anatolia by Instrumental and Epithemal Neutron Activation Analysis for obtaining an accurate fingerprint for discrimination of potential natural sources of raw material that would permit tracing the origin of archaeological obsidian artefacts.     

GCD matrices,posets, and nonintersecting paths

We show that with any finite partially ordered set P (which need not be a lattice) one can associate a matrix whose determinant factors nicely. This was also noted by D.A. Smith, although his proof uses manipulations in the incidence algebra of P while ours is combinatorial, using nonintersecting paths in a digraph. As corollaries, we obtain new proofs for and generalizations of a number of results in the literature about GCD matrices and their relatives.     

Realizing fast photoinduced recovery with polyfluorene-block-poly(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices

Photonic field-effect transistor (FET) memory devices offer unique advantages owing to their solution processability, low cost production, and their lightweight and structural flexibility. Despite the plethora of research demonstrated the photon based programming process, limited reports are available for photoinduced recovery mechanism in such devices. To investigate the influence of polymer electret design on photonic memory performance, poly(9,9-dioctylfluorene) (PFO)–block–poly (vinylphenyl oxadiazole) (POXD) conjugated block copolymers were employed to a photonic FET memory with n-type semiconducting channel. The studied device exhibited bistable ON/OFF current states after electrical programming and photoinduced recovery (erasing) processes. The device operating mechanism was elaborated by comparing the device performance with respective electrets of PFO-b-POXD and PFO-b-polystyrene (PS) and PFO homopolymer. We found that PFO-b-POXD can efficiently generate photoexciton under UV illumination to neutralize the trapped hole, and assuage the hole trapping propensity of PFO segment, simultaneously. By optimizing the POXD content in the block copolymer, a decent memory ratio (I_ON/I_OFF) of ~10⁵ was achieved after 10⁴ s, indicating its superior long-term stability and data discernibility. This research shows the judicious strategy to design polymer electret for photonic memory, and it opens up the possibility of developing photonic memory, human perception and futuristic communication systems using simple, convenient and reliable optoelectronic technique.