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51.
报道Ar^q Ne(q=8,9,11,12)碰撞体系中多电子转移过程,得到了多组实验测量电荷交换截面数据,讨论入射离子电荷交换截面、反冲离子产生截面与入射离子电荷态、能量以及散射离子电荷态的关系,并且将实验结果与Ar^q Ar碰撞体系进行对比研究。在修正分子库仑过垒模型的基础上,对实验现象做了合理的解释。 相似文献
52.
Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV
Ga
2–
and the triply positively charged defect complex (ASGa+V
As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site andV
As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV
Ga
2–
/(AsGa+V
As)3+ is supposed to be able to pin the GaAs Fermi level at approximately theE
v
+0.6 eV level position, which requires that the net free energy of theV
Ga/(AsGa+V
As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE
v
+1.2 eV level position instead of the neededE
v
+0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future. 相似文献
53.
In this paper,the concept of the infinitesimal realization factor is extended to the parameter-dependent performance functions in closed queueing networks. Then the concepts of realization matrix (its elements are called realization factors) and performance potential are introduced,and the relations between infinitesimal realization factors and these two quantities are discussed. This provides a united framework for both IPA and non IPA approaches. Finally,another physical meaning of the service rate is given. 相似文献
54.
55.
Flow, temperature, and electromagnetic (EM) fields in a radio-frequency thermal plasma torch designed for the preparation of superconducting powders or films have been analysed by using a new two-dimensional modeling approach with the electric field intensity as the fundamental EM field variable. The insertion of a stainless steel injection tube into the torch leads to large induction currents in this tube. Although such large induction currents cause pronounced changes of the EM fields near the injection tube, flow and temperature fields are little affected. There exists only one large toroidal vortex in the upper part of the present torch, while the maximum temperature appears at an off-axis location within the coil region. 相似文献
56.
57.
58.
成功制备了结构为ITO/PDDOPV/PPQ/Al的异质结聚合物发光二极管。该器件在正反向偏压下均可发光。在正向偏压下的光发射主要来自PDDOPV,但在反向偏压下的光发射则包括来自PPQ的蓝光发射和PDDOPV的黄光发射。蓝光强度与黄光强度的比值随着反向偏压的增加而增加,当反向直流电压分别为22V、24V、26V、28V时,其电致发光光谱中PPQ与PDDOPV的峰高比IPPQ/IPDDOPV分别为1.092、1.329、1.605、2.046。换句话说,该器件的发光颜色是压控可调的,这对实现彩色显示是极为有利的。分析了在反向偏压下的发光机理以及IPPQ/IPDDOPV受电压控制的原因。 相似文献
59.
采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS
关键词:
2复合薄膜')" href="#">ZnSe/SiO2复合薄膜
光学性质
椭偏光度法
荧光光谱 相似文献
60.
Xi Nian FANG Jian Hua WANG 《数学学报(英文版)》2006,22(6):1819-1824
In this paper, we study the extension of isometries between the unit spheres of normed space E and C(Ω). We obtain that any surjective isometry between the unit spheres of normed space E and C(Ω) can be extended to be a linear isometry on the whole space E and give an affirmative answer to the corresponding Tingley's problem (where Ω be a compact metric space). 相似文献