The effects of the intense laser field on the optical properties of the asymmetric parabolic quantum well

We have calculated the effects of the intense laser field on the total optical absorption coefficient (the linear and third-order nonlinear) for transition between two lower-lying electronic levels in the asymmetric parabolic \({\text{GaAs/ Ga}}_{{ 1 {\text{ - x}}}} {\text{Al}}_{\text{x}} {\text{As}}\) quantum well. Total absorption coefficient (linear and nonlinear absorption coefficient) for the transitions between any two electronic states was calculated by using density matrix formalism and the perturbation expansion method. Our results show that the effects of intense laser field and the well dimensions on the optical transitions are more pronounced. If well center is changed to be \({\text{L}}_{\text{c}} < 0 \, ({\text{L}}_{\text{c}} > 0)\), effective well width decreases (increases) and thus we can obtain the red or blue shift in the peak position of the absorption coefficient by changing the intensities of the non-resonant intense laser field as well as dimensions of the well.     

A cost effective 100 Gbps hybrid MDM–OCDMA–FSO transmission system under atmospheric turbulences

FSO or free space optics is a familiar name used in a wide array of applications in the area of telecommunications. Due to its features of low maintenance cost and deployment time, most of the applications consider FSO as the alternative solution for appropriately replacing fiber optics. In this work, we have designed 100 Gbps FSO system by combining mode division multiplexing (MDM) and optical code multiple access scheme (OCDMA). Ten channels, each carrying 10 Gbps data, are transported over 8 km FSO link by using MDM of two Laguerre Gaussian modes and random diagonal codes. Moreover, the performance of proposed MDM–OCDMA–FSO system is also investigated under atmospheric turbulences.     

Numerical simulation of low loss silicon photonic wire waveguide with multiple cladding layers

A different silicon photonic wire waveguide is proposed, which uses multiple thin cladding layers in order to reduce the index contrast between core and cladding interface. The reduced index contrast in the proposed waveguide has led to reduction in the scattering losses by 37% as compared to silicon wire waveguide for 400 nm × 220 nm waveguide dimension. The proposed waveguide has shown significant reduction in bending losses. It offers the bending loss of 0.0118 dB at the radius of 1 μm and 0.0063 dB for a radius of 2 μm at 1.55 μm wavelength as compared to 0.086 and 0.013 dB at the radius of 1 and 2 μm, respectively, offered by silicon photonic wire waveguide at 1.5 μm wavelength. The use of polymer material as top cladding layer resulted in decreasing the sensitivity of effective index against temperature for the designed waveguide by a factor of 2 as compared to silicon wire waveguide.     

Improved visible light photocatalytic activity of TiO<Subscript>2</Subscript> nano powders with metal ions doping for glazed ceramic tiles

Self-cleaning and anti-bacterial activities of the photo-catalyst titanium dioxide make it a superior compound for use in the ceramics and glass industry. In order to achieve high self-cleaning efficiency for building products, it is important that Titania is present as anatase phase. Moreover, it is desirable that the particle sizes are in Nano-range, so that a large enough surface area is available for enhanced catalytic performance. In the present paper, Cobalt and Nickel co-doped (4%mol Ni and 4%mol Co doped TiO₂) and un-doped TiO₂ Nano powders have been prepared by sol–gel technique. They were calcined at the temperatures in the range of 475–1075 °C. Ni/Co co-doped TiO₂ postponed the anatase to rutile transformation of TiO₂ by about 200–300°C, such that before calcination at 775°C, no rutile was detected for 4 mol% Ni/Co co-doped TiO₂. A systematic decreasing on crystallite size and increasing on specific surface area of Ni/Co co-doped TiO₂ were observed. Photo-catalytic activity of anatase polymorph was measured by the decomposition rate of methylene blue under visible light. The results showed enhanced catalysis under visible light for Ni/Co co-doped TiO₂ as compared to pure TiO₂. The enhanced performance was attributed to surface chemistry change associated with a slight shift in the band gap. Depending on the temperatures ranging from 475 to 1075 °C, band gap energy of Ni and Co doped TiO₂ crystals decreased. For all samples there is a general reduction of the band gap energy from 3.00 to 2.96 eV.     

Improvement of thermal and spectroscopic behavior of Er<Superscript>3+</Superscript>/Ce<Superscript>3+</Superscript> co-doped tellurite glass for lasing materials

Tellurite glasses (TeO₂–ZnO–Nb₂O₅) mono-doped Er³⁺ and co-doped Er³⁺/Ce³⁺ have been prepared using the melt-quenching technique. To evaluate the effect of Ce³⁺ on the structural, thermal stability of glass hosts and fluorescence properties of Er³⁺, X-ray diffraction patterns, Ftir spectra, differential scanning calorimeter curves, absorption spectra, fluorescence emission spectra, fluorescence lifetimes, up-conversion emission spectra of glass samples were measured and investigated. Using Judd–Ofelt theory, we calculated intensity parameters (Ω₂, Ω₄ and Ω₆), spontaneous emission probabilities, the radiative lifetime, luminescence branching factors and the quantum yield of luminescence for ⁴I_13/2 → ⁴I_15/2 transition. The co-doping with Ce³⁺ was effective on the suppression of up-conversion emission of Er³⁺ owing to the phonon-assisted energy transfer: Er³⁺:⁴I_11/2 + Ce³⁺:²F_5/2 → Er³⁺:⁴I_13/2 + Ce³⁺:²F_7/2 which contributed the effective enhancement of 1.53 µm fluorescence emission. The change in optical properties with the addition of Ce³⁺ ions have been discussed and compared with other glasses. Using the Mc Cumber method for the ⁴I_13/2 → ⁴I_15/2 transition, absorption cross-section, calculated emission cross-section, and gain cross-section values support that TZNEr1Ce1 glass is a potential material for developing broad-band and high-gain erbium-doped fiber amplifiers applied for 1.53 µm.     

Synthesis and properties of As<Subscript>x</Subscript>Te<Subscript>100−x</Subscript> films prepared by plasma deposition via elemental As and Te

As_xTe_100?x chalcogenide films (where x = 30–80 at.%) were synthesized via direct interaction of arsenic and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at reduced pressure. Phase and structural evolution of As_xTe_100?x films were implemented by gradual changing of the ratio of the initial substances in the gas phase. The dependence of the films structure, surface morphology and optical properties on phase and chemical content has been studied.     

Analytical framework of small-gap photoconductive dipole antenna using equivalent circuit model

A compact planar antenna sources with on-chip fabrication and high directivity in order to achieve large depth-of-field for better image resolution is the prospective demand for THz imaging application. Therefore, the small-gap photoconductive dipole antennas have been explored to fulfil such applications demand. However, there are certain modalities for improving the photoconductive dipole antenna performance which need to identify to accomplish high THz average radiated power and improved total efficiency. The unit-cell small-gap photoconductive dipole antenna radiation power enhancement methods need to optimize the design parameters with photoconductive material selection from theoretical simulation. Further, the potential improvement of coupling efficiency of THz wave with air as well as femto-second laser incident efficiency is also important parameters to enhance the radiation power of small-gap photoconductive dipole antenna. In this paper, we have presented an analytical procedure employing explicit mathematical expression leading to the physical behaviour of small-gap photoconductive dipole antenna. The effects of biased lines on the antenna performance parameters are discussed with the help of proposed equivalent circuit model. We have explored the effect of gap-size on the THz radiated power and on total radiation efficiency from the proposed photoconductive dipole antennas.     

Small and large signal analysis using circuit model of InGaAs/InP based uni-travel carrier photodiode

An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics. Circuit model incorporates chip and package parasitic of the device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the device bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.     

Time-dependent internal Quantum Efficiency and diffusion Modulation Transfer Function of N/P photodiodes

The minority carrier continuity equation has been solved with the Green’s function approach in a N/P photodiode under the low-level injection assumption. The analytical solution obtained with this approach depends on the three spatial coordinates and on time. The diffusion and the collection of the excess minority carriers have been studied during the transitional period corresponding to very short integration times. The internal Quantum Efficiency and the diffusion Modulation Transfer Function have been calculated according to time. The simulations showed that they evolve with time until their steady-state values. When the integration time is very short, this evolution has to be taken into account for the estimation of the sensitivity of a photodiode and the contrast on an image of a sensor based on several adjacent N/P-type photodiodes.