Influence of the skin effect on the absorption of electromagnetic radiation by a fine metal particle

The cross section of absorption of electromagnetic radiation by a fine spherical metal particle is calculated. The influence of the skin effect on the absorption cross-section is estimated for an arbitrary ratio between the free path and size of the particle. The results of this work are compared with those obtained earlier in the framework of classical electrodynamics. It is shown that taking into account the kinetic effects modifies essentially the known data for the skin effect in a spherical particle.     

Controlling the diffusion process via time-variable diffusion coefficient

The establishment of the steady-state dopant profile in a medium with a time-variable diffusion coefficient is considered within the approach proposed previously for estimating mass-and heat-transfer time characteristics. It is shown that the time it takes for the equilibrium concentration to set in may be increased or decreased by appropriately choosing the law of variation of the diffusion coefficient.     

Low-power RF plasma sources for technological applications: II. plasma sources under anomalous skin effect conditions

A theory of a planar disk-shaped RF plasma source under anomalous skin effect conditions is developed. In the absence of an external magnetic field, such conditions are satisfied for transverse electromagnetic waves with phase velocities below the electron thermal velocity, and, in the presence of this field, they are satisfied for electron cyclotron waves with frequencies corresponding to the resonant absorption line. For each of these cases, the RF field power deposited in a plasma with given parameters is determined and the equivalent plasma resistance is calculated.     

The structure and phase composition of stabilized zirconia-based nanosystems exposed to shock-wave treatment

The special features of the structure and phase composition of nanocrystalline zirconia-based powders subjected to shock-wave treatment are studied. The investigations show that zirconia with small amounts of yttria and/or alumina is in nanocrystalline and quasi-amorphous states representing a nonequilibrium solid solution of ZrO2 (Y, Al) and that an increase in the monoclinic phase abundance is associated with a reduction in the critical size of tetragonal crystallites due to an accumulation of lattice microdistortions. The monoclinic phase in powders with yttria and alumina additions is not formed even with shock compression at pressures up to 20 GPa. This is attributed to the fact that the resultant lattice microdistortion level is inadequate to destabilize the nanocrystalline tetragonal phase. Relaxation of microdistortions on annealing causes the critical size of tetragonal crystallites to increase. As this takes place, the monoclinic phase is converted into the tetragonal one.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 61–70, September, 2004.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -     

Special Theory of Relativity in Electrodynamics

A method of teaching of one of the divisions of electrodynamics devoted to relativity theory is suggested. The presentation is based on the four-dimensional formalism, which allows a number of fundamental physical phenomena to be considered from a unified position. The content is in full conformity with the approved standard programs for students and postgraduates of radio physical and radio technical specialities of universities. The methods can be useful to the teachers, scientific workers, and engineers concerned with other directions and specialities.     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.