Quantitative vibration amplitude measurement with time-averaged digital speckle pattern interferometry

A new method of using time-averaged digital speckle pattern interferometry for the quantitative measurement of vibration amplitude was developed. Signal processing techniques especially the Hilbert transformation for quantitative evaluation of the Bessel fringes obtained in time-averaged digital speckle pattern interferometry were explored. The quadrature signal after Hilbert transformation is equivalent to a 90° phase-shifted interferogram for a monotonically increasing or decreasing phase function. An algorithm was developed for Bessel fringe contrast enhancement and phase extraction. The techniques were tested numerically and experimentally. Sub-fringe quantification of the time-averaged vibration fringes is realised with the proposed method. Compared with the commonly used phase shift method which requires a minimum of two images for image processing, this method requires only one fringe pattern for data extraction.     

Estimation of eardrum acoustic pressure and of ear canal length from remote points in the canal

Sound pressure distributions in the human ear canal, whether unoccluded or occluded with ear molds, were studied using a probe tube technique. On average, for frequencies below 6 kHz, the measuring probe tube had to be placed within 8 mm of the vertical plane containing the top of the eardrum (TOD), determined optically, in order to obtain sound pressure magnitudes within 6 dB of "eardrum pressure." To obtain that accuracy in all of the eight subjects studied, the probe had to be within 6 mm of the TOD. Since probe location relative to the drum has to be known, a purely acoustic method was developed which can be conveniently used to localize the probe-tip position, utilizing the standing wave property of the sound pressure in the ear canal. The acoustically estimated "drum location" generally lay between the optically determined vertical planes containing the TOD and the umbo. On average, the "drum location" fell 1 mm medial to the TOD. Of the 32 estimates made acoustically in various occluded and unoccluded conditions in 14 subjects, 30 estimates lay within a +/- 2-mm range of this average.     

Highly sensitive miniature photonic crystal fiber refractive index sensor based on mode field excitation

A highly sensitive miniature photonic crystal fiber refractive index sensor based on field mode excitation is presented. The sensor is fabricated by melting one end of a photonic crystal fiber into a rounded tip and splicing and collapsing the other end with a single-mode fiber. The rounded tip is able to induce cladding mode excitation, which resulted in an additional phase delay. Linear response of 262.28 nm/refractive index unit in the refractive index range of 1.337 to 1.395 is obtained for the physical length of a 953 μm sensor. The sensor is also shown to be insensitive to environmental temperature.     

Transport properties of Pr0.7Ca0.3MnO3/Nb:SrTiO3 heterojunctions

Current–voltage (J–V) characteristics of epitaxial hetero-junctions composed of Pr_0.7Ca_0.3MnO₃ and Nb:SrTiO₃ were studied under forward and reversed bias conditions. Detailed analysis showed that the J–V characteristics of these heterojunctions can be well-fitted by the thermally-assisted tunnelling model. While the dielectric constant of Nb:SrTiO₃ extracted under the forward bias was about one order of magnitude smaller than that of bulk SrTiO₃, the value obtained under reverse bias was very close to that of the bulk SrTiO₃. The result can be explained by the existence of an interface layer on the Nb:SrTiO₃ substrate with a smaller effective dielectric constant. The current finding suggested that the properties of interface layer should be taken into account in order to accurately simulate the J–V characteristics of such heterojunctions.     

Plasmonic waveguiding in a hexagonally ordered metal wire array

We propose the inclusion of a structured pattern of nanoscale metal wires in a silica fiber to form a symmetric plasmonic waveguide. The surface plasmon polariton modes within the waveguide are studied by varying the wire diameter and spacing. Simulation results show that hybridization of the single-wire mode and the gap plasmon mode can yield a hybrid mode with optimum propagation lengths comparable to those reported for other structures but with better light confinement. The fiber can be easily doped with a gain material to offset the loss so that the resultant waveguide will be useful for integration with electronic circuits at nanometer dimensions.     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.     

Electrical properties of highly (111)-oriented lead zirconate thin films

Antiferroelectric PbZrO₃ thin films were grown on Pt/Ti/SiO₂/Si substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO₃/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (P_r) and coercive electric field (E_c) values of 8.97 μC/cm² and 162 kV/cm, respectively. The leakage current density of the highly (111)-oriented PbZrO₃ film was less than 1.0×10⁻⁷ A/cm² over electric field ranges from 0 to 105 kV/cm. The conduction current depended on the voltage polarity. The PbZrO₃/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour of Pt/PbZrO₃/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, the currents have contributions of both dielectric relaxation current and leakage current.     

Measurement of the total active 8B solar neutrino flux at the Sudbury Neutrino Observatory with enhanced neutral current sensitivity

The Sudbury Neutrino Observatory has precisely determined the total active (nu(x)) 8B solar neutrino flux without assumptions about the energy dependence of the nu(e) survival probability. The measurements were made with dissolved NaCl in heavy water to enhance the sensitivity and signature for neutral-current interactions. The flux is found to be 5.21 +/- 0.27(stat)+/-0.38(syst) x 10(6) cm(-2) s(-1), in agreement with previous measurements and standard solar models. A global analysis of these and other solar and reactor neutrino results yields Deltam(2)=7.1(+1.2)(-0.6) x 10(-5) eV(2) and theta=32.5(+2.4)(-2.3) degrees. Maximal mixing is rejected at the equivalent of 5.4 standard deviations.     

Photonic band gap architectures for holographic lithography

Using symmetry considerations, we identify three families of large photonic band-gap (PBG) architectures defined by the isointensity surfaces of four beam laser interference. For particular choices of beam intensities, directions, and polarizations, we obtain a diamondlike crystal, a novel body-centered cubic architecture, and a simple cubic structure with PBG to center frequency ratios of 25%, 21%, and 11%, respectively, when the isointensity surface defines a silicon (dielectric constant of 11.9) to air boundary.     

Relaxor behavior of (Ba,Sr)(Zr,Ti)O3 ferroelectric ceramics

We examine the ferroelectric-relaxor behavior of (Ba_0.65Sr_0.35)(Zr_0.35Ti_0.65)O₃ (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with T_VF=107 K, E_a=0.121 eV, and ν₀=6.83×10¹⁴ Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>T_m (T_m, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications.