Alloying by high dose ion implantation of iron into magnesium and aluminium

Alloys of the systems Fe–Al (mixable over the whole concentration range) and Fe–Mg (insoluble with each other) were produced by implantation of Fe ions into Al and Mg, respectively. The implantation energy was 200 keV and the ion doses ranged from 1 × 10₁₄ to 9 × 10₁₇cm^-2The obtained implantation profiles were determined by Auger electron spectroscopy depth profiling. Maximum iron concentrations reached were up to 60 at.% for implantation into Al and 94 at.% for implantation into Mg. Phase analysis of the implanted layers was performed by conversion electron Mössbauer spectroscopy and X‐ray diffraction. For implantation into Mg, two different kinds of Mössbauer spectra were obtained: at low doses paramagnetic doublets indicating at least two different iron sites and at high doses a dominant ferromagnetic six‐line‐pattern with a small paramagnetic fraction. The X‐ray diffraction pattern concluded that in the latter case a dilated αiron lattice is formed. For implantation into Al, the Mössbauer spectra were doublet structures very similar to those obtained at amorphous Fe–Al alloys produced by rapid quenching methods. They also indicated at least two different main iron environments. For the highest implanted sample a ferromagnetic six‐line‐pattern with magnetic field values close to those of Fe₃Al appeared.     

Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

High quantum efficiency of intersubband transitions in coherent tunneling of electrons through asymmetric double-barrier structures

A converging perturbation series that can be summed analytically has been obtained for intersubband transitions of electrons coherently tunneling through the middle of a dimensionally quantized level in an asymmetric double-barrier structure in a high-frequency terahertz electric field. The possibility of a substantial increase in tunneling current accompanied by either absorption or emission of a photon has been demonstrated. The quantum efficiency of radiative transitions between dimensionally quantized levels can be up to 66%. Zh. éksp. Teor. Fiz. 112, 237–245 (July 1997)     

Effect of iodine sorption on the free volume of polycarbonate

 The effect of iodine sorption on the free volume of polycarbonate is investigated by Positron Annihilation Lifetime method. The observed results are interpreted in terms of the Charge Transfer Complex formation and precipitation of iodine at the initial and final stages of sorption, respectively. At higher levels of sorption, changes in the second lifetime and its intensity seem to suggest a conformational transformation, probably due to the net change in the amorphous-crystalline boundary regions of the polymer matrix. The free volume cavities have been predominantly occupied by I^- ₃ species and the diffusion process obeys Fick’s law. An exponential type correlation has been observed between fractional free volume and the diffusion coefficient. Received: 13 June 1996/Accepted: 20 September 1996     

A poincaré-bendixson theorem for analytic families of vector fields

We provide a characterization of the limit periodic sets for analytic families of vector fields under the hypothesis that the first jet is non-vanishing at any singular point. Also, applying the family desingularization method, we reduce the complexity of some of these sets.     

Influence of the sulfonate countercation on the thermal stability of nafion perfluorosulfonate membranes

We report a strong dependence of the thermal stability of Nafion® perfluorosulfonate ionomer on the nature of the counterion associated with the fixed sulfonate site. These results were obtained using thermal gravimetric analysis on a series of alkali metal and alkyl ammonium cation-exchanged Nafion films. We have found that the temperature of decomposition of Nafion is inversely dependent on the size of the exchanged cation; i.e., Nafion films show improved thermal stability as the size of the counter cation decreases. We attribute this inverse relationship of thermal stability with counterion size to an initial decomposition reaction which is strongly influenced by the strength of the sulfonate-coun-terion interaction. © 1993 John Wiley & Sons, Inc.     

Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.     

Increasing the accuracy of eigenvalue computation in the spectral problem

A simple method is proposed for increasing the accuracy of computation of the eigenvalues of elliptic operators, which does not require high-order accurate schemes.Translated from Vychislitel'naya i Prikladnaya Matematika, No. 63, pp. 63–68, 1987.