Focusing of shock waves in a highly viscous fluid

The method of combined asymptotic expansions is used to solve the problem of the focusing of a shock wave (in a weakly compressible medium of high viscosity. Asymptotic forms of the solution are constructed in a number of spatial zones. The focusing zone is described by its asymptotic form obtained by combining it with the solution corresponding to viscous geometrical acoustics. The reflection of a shock wave formed as a result of velocity jump near one of the foci of the ellipsoid of revolution is discussed as an example. Analytical relationships descrbing the focusing zone around the second focus are obtained. It is shown that at the focus itself the wave profile has an antisymmetric form, and the compression wave is followed by a rarefaction wave of the same form.     

On an integral equation of the problem for an elastic strip with a slit

A new singular integral equation is obtained that describes the elastic equilibrium of a strip with both an inner and an edge slit (crack) and has a considerable advantage over existing equations /1–9/, etc.) from the viewpoint of a numerical realization and clarification of the analytical relationship with an analogous equation for a half-plane. Numerical results are given of a computation of the stress intensity coefficients at the tips of the inner and edge cracks that refine data in the literature.     

The Pathwise Numerical Approximation of Stationary Solutions of Semilinear Stochastic Evolution Equations

Under a one-sided dissipative Lipschitz condition on its drift, a stochastic evolution equation with additive noise of the reaction-diffusion type is shown to have a unique stochastic stationary solution which pathwise attracts all other solutions. A similar situation holds for each Galerkin approximation and each implicit Euler scheme applied to these Galerkin approximations. Moreover, the stationary solution of the Euler scheme converges pathwise to that of the Galerkin system as the stepsize tends to zero and the stationary solutions of the Galerkin systems converge pathwise to that of the evolution equation as the dimension increases. The analysis is carried out on random partial and ordinary differential equations obtained from their stochastic counterparts by subtraction of appropriate Ornstein-Uhlenbeck stationary solutions.     

Ag-induced atomic structures on the Si(110) surface

We report the results of STM investigation of the initial stage of Ag adsorption on an Si(110) surface. At 0.21 ML Ag coverage, the size and orientation of the unit cell correspond to the parameters of a 16 × 2 unit cell of clean Si(110) surface. With increasing of the Ag coverage up to 0.42 ML, the type of surface reconstruction changes to a 4 × 1-Si(110)-Ag structure. The text was submitted by the authors in English.     

Neighborhood Complexes and Generating Functions for Affine Semigroups

Given a₁,a₂,...,a_n ∈ ℤ^d$, we examine the set, G, of all non-negative integer combinations of these a_i. In particular, we examine the generating function f(z) = ∑_{b ∈ G}z_b. We prove that one can write this generating function as a rational function using the neighborhood complex (sometimes called the complex of maximal lattice-free bodies or the Scarf complex) on a particular lattice in ℤ_n. In the generic case, this follows from algebraic results of Bayer and Sturmfels. Here we prove it geometrically in all cases, and we examine a generalization involving the neighborhood complex on an arbitrary lattice.     

Dual Characterizations of Set Containments with Strict Convex Inequalities

Characterizations of the containment of a convex set either in an arbitrary convex set or in the complement of a finite union of convex sets (i.e., the set, described by reverse-convex inequalities) are given. These characterizations provide ways of verifying the containments either by comparing their corresponding dual cones or by checking the consistency of suitable associated systems. The convex sets considered in this paper are the solution sets of an arbitrary number of convex inequalities, which can be either weak or strict inequalities. Particular cases of dual characterizations of set containments have played key roles in solving large scale knowledge-based data classification problems where they are used to describe the containments as inequality constraints in optimization problems. The idea of evenly convex set (intersection of open half spaces), which was introduced by W. Fenchel in 1952, is used to derive the dual conditions, characterizing the set containments.     

Analytical investigation into the mechanism of dielectric losses due to interlayer polarization

The theory of dielectric space-charge polarization losses describes well both the model of an inhomogeneous dielectric [1] and the polarization resulting from mosaic blocks of alkali-halide crystals [2]. The Debye frequency dependences ε*(ω) and tan δ(ω) with non-Arrhenius relaxation time are calculated in the first approximation of perturbation theory [3, 4] with the use of a nonlinear system of the Fokker-Planck and Poisson equations for the interlayer polarization with allowance for tunnel transitions of relaxation oscillators. For the Maxwell mechanism of space-charge relaxation, tan δ(ω) also has the Debye form [5]. It should be noted that in studies cited above the electric field was considered uniform, and the nonlinearity of the initial system of equations was not investigated. This paper removes these restrictions and elaborates a theory of relaxation mechanism. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 28–34, November, 2006.     

Halogenation of N-substituted para-quinone monoimine and para-quinone monooxime esters: VI. Regular trends in chlorination and bromination of N-arylsulfonyl-1,4-benzoquinone monoimines alkyl-substituted in the quinoid ring

Reactions of halogens with N-arylsulfonyl-1,4-benzoquinone monoimines occur with the formation of a halogenonium ion that either transforms into a carbocation where the first halogen atom adds to the carbon in the ortho-position relative to the carbonyl carbon, or the halogenonium ion adds directly the second halogen atom.