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991.
992.
The dynamical Casimir effect is analyzed in the framework of the S-matrix formulation for a one-dimensional cavity that exhibits contraction at a constant rate over a finite time interval. The exact solution to the problem is presented. It is demonstrated that the efficiency of the creation of pairs nonmonotonically depends on the contraction time. This is due to the fact that the particles are only created at the moments corresponding to the acceleration and stopping of the moving boundary, so that the contributions of these processes on the number of the created particles interfere with each other. The parameters that correspond to the optimal creation of pairs and the stability of a vacuum are presented. The effect of the finiteness of the cavity-boundary acceleration on the results obtained is studied.  相似文献   
993.
The effect of magnetic treatment on the isothermal martensitic transformation in the Fe-24% Ni-4% Mn alloy has been investigated. The martensitic transformation in a dc magnetic field at liquid-helium temperature has been analyzed.  相似文献   
994.
For the case of a phase transition into a macroscopically inhomogeneous state described by the order parameter (OP) that is characterized by a multiarm star of a vector {ki}, a method for compensating the spatial variation in all star arms ki is proposed. To this end, a unified tensor field (OP connectivity) is considered, which is interpreted as a stress field potential. The OP-connectivity interaction is described by the phenomenological dislocation charge. Alternative ways of physical interpretation of the OP connectivity are discussed.  相似文献   
995.
In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.  相似文献   
996.
Distortions induced by an external magnetic field in the magnetic structure of a thin layer of a uniaxial collinear antiferromagnet with rough surfaces are studied using computer simulation. It is shown that, under certain conditions, the presence of atomic steps at the layer surfaces causes the antiferromagnetic layer to break up into domains. The character and magnitude of distortions are found for an arbitrary ratio of the distance between atomic steps to the order parameter correlation length. Original Russian Text ? A.I. Morosov, I.A. Morosov, A.S. Sigov, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 7, pp. 1228–1235.  相似文献   
997.
Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ~30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis.  相似文献   
998.
The surface of polystyrene was modified with the bovine serum albumin-Tween 80 complex. The adsorption of the complex and the formation of films on the surface of polystyrene were studied using the piezoelectric weighing method. The state of the modified surface was evaluated by contact angle measurements. The stability of the modifying layer was determined based on the critical interfacial energy values of the surface equilibrated with water. A conclusion was drawn that the complex can be effectively used to enhance the biocompatibility of polymer materials.  相似文献   
999.
The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al2O3(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 109–1010 cm−2. The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al2O3 as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.  相似文献   
1000.
Optical spectroscopy in combination with wide field or confocal optical microscopy enables the investigation of single quantum objects such as organic molecules, II/VI semiconductor quantum dots and silicon nanocrystals. They all have fluctuations of luminescence intensities on time scales longer than μs in common. A comparison reveals that despite the large differences of the nature of the respective quantum objects, the intensity fluctuations are related to a slow ionisation process followed by a trapping of the photoejected charge in the non-conducing environment. Detailed aspects of the dynamics are controlled by the dielectric properties of the matrix.  相似文献   
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