Integrable semiclassical deformations of general algebraic curves and associated conservation laws

Based on the Lenard relations, we completely classify integrable deformations of general algebraic curves. We construct the general solution of the Lenard relation from the invariance condition with respect to an element of the Galois group of the curve. We give some examples and also some associated conservation laws. __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 151, No. 3, pp. 458–469, June, 2007.     

Generic polynomials for transitive subgroups of the group S 4 over fields of characteristic 2

Generic polynomials for the symmetric group S₄, the Klein group V₄, the cyclic group of order 4, the dihedral group D₄, and the alternating group A₄ over fields of characteristic 2 are described explicitly. Bibliography: 5 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 330, 2006, pp. 247–258.     

A mathematical model of the response of the semicircular canal and otolith to vestibular system rotation under gravity

A mathematical model of the system composed of two sensors, the semicircular canal and the sacculus, is suggested. The model is described by three lines of blocks, each line of which has the following structure: a biomechanical block, a mechanoelectrical transduction mechanism, and a block describing the hair cell ionic currents and membrane potential dynamics. The response of this system to various stimuli (head rotation under gravity and falling) is investigated. Identification of the model parameters was done with the experimental data obtained for the axolotl (Ambystoma tigrinum) at the Institute of Physiology, Autonomous University of Puebla, Mexico. Comparative analysis of the semicircular canal and sacculus membrane potentials is presented. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 11, No. 7, pp. 207–220, 2005.     

Temporal compression of nanosecond laser pulses using coherent control

We present a study of the temporal compression of nanosecond laser pulses resulting from the coherent control peculiarities of the propagation dynamics in a regime of electromagnetically induced transparency. We describe the general theoretical framework and discuss the crucial conditions required in order to experimentally realize such a temporal compression scheme. A proof-of-concept experimental realization of a scheme of this type in a sample of hot sodium vapors is currently being implemented: we describe in detail the experimental setup designed for this purpose.     

On the dynamical Casimir effect in a one-dimensional contracting cavity

The dynamical Casimir effect is analyzed in the framework of the S-matrix formulation for a one-dimensional cavity that exhibits contraction at a constant rate over a finite time interval. The exact solution to the problem is presented. It is demonstrated that the efficiency of the creation of pairs nonmonotonically depends on the contraction time. This is due to the fact that the particles are only created at the moments corresponding to the acceleration and stopping of the moving boundary, so that the contributions of these processes on the number of the created particles interfere with each other. The parameters that correspond to the optimal creation of pairs and the stability of a vacuum are presented. The effect of the finiteness of the cavity-boundary acceleration on the results obtained is studied.     

On the effect of magnetic fields on alloys with isothermal kinetics of martensitic transformation

The effect of magnetic treatment on the isothermal martensitic transformation in the Fe-24% Ni-4% Mn alloy has been investigated. The martensitic transformation in a dc magnetic field at liquid-helium temperature has been analyzed.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Specific features of nanosystems based on natural isoferroplatinum

Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ～30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis.     

Study of local lattice relaxation of substitutional impurities in silicon and germanium

Local lattice relaxation of substitutional donors in silicon investigated using self‐consistent multiple scattering Xα (MSXα) method within the framework of the standard muffin‐tin potential approximation is extended to substitutional donors in germanium and substitutional acceptors in both silicon and germanium. Incorporating the effect of lattice relaxation surrounding the impurity makes the model suitable for both shallow and deep levels. Chemical trends of some aspects of impurity states, such as local lattice relaxation and charge transfer, of the impurities both in silicon and germanium are inferred. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.