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91.
Abstract The photoluminescence (PL) of a CdTe/CdMnTe superlattice has been studied at pressures up to 4.1GPa, where the phase transition occurs. PL is observed up to this pressure, and it moves to higher energy with pressure at 66meV/GPa. This result is consistent with theory. Magnetic fields decrease the band-gap of the semimagnetic CdMnTe barriers and this reduces the PL energy. The pressure dependence of this effect is expected to provide a stringent test of the theory of semimagnetic materials and of superlattices. 相似文献
92.
The absorption spectrum of a-Si: H below the gap consists of an exponential tail whose slope is independent of temperature (up to ≈ 400 K). The excitation spectrum of the 1.4 eV photoluminescence follows the absorption closely. We interpret this in terms of a zero-phonon model for the absorption and emission transitions, and show that this model is compatible with the known behaviour of the photoluminescence. 相似文献
93.
F. D. J. Dunstan 《The Journal of the Operational Research Society》1977,28(4):839-851
The paper discusses the solution of a resource allocation problem and a new method for solving a special case of the problem. An algorithm for solving the general problem is presented, and computational experience comparing it with existing methods is given. 相似文献
94.
The work presented in this paper is based on the use of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to study the passivation of atomic scale defect-induced surface states on cleaved III–V (1 1 0) surfaces. This is based on the use of thin Si layers deposited in situ on to the atomically clean surface. The simultaneous STM and STS measurements allowed direct correlation of the structural and electronic properties at the nanoscopic level. The preferential adsorption of Si clusters onto surface defects was achieved using elevated temperature growth on the GaAs(1 1 0) substrate. The STS results clearly indicated local electronic passivation of both step defects and vacancy clusters when the interface is formed at 280 °C. This observation was also confirmed on a macroscopic level using X-ray photoelectron spectroscopy (XPS) under identical conditions. The results are interpreted in terms of the surface bonding of Si with the defect sites. Furthermore, this STM/STS study has been extended to real laser devices where comparable defect features are observed. The implications of defect passivation in nanotechnology are also discussed. 相似文献
95.
J. Regis Botelho A. Duarte Gondim I. M Garcia dos Santos P. O. Dunstan A. G. Souza V. J. Fernandes Jr. A. S. Araújo 《Journal of Thermal Analysis and Calorimetry》2004,75(2):607-613
The standard molar enthalpy of formation of crystalline dialkyldithiocarbamate chelates, [Pd(S2CNR2)2], with R=CH3 and i-C3H7, was determined through reaction-solution calorimetry in 1,2-dichloroethane, at 298 K. Using the standard molar enthalpies
of formation of the gaseous chelates, the homolytic (526±18 and 666±10) and heterolytic (2693±18 and 2957±10 kJ mol-1) mean enthalpies of palladium-sulphur bond dissociation were calculated.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
96.
Botelho J. R. Souza A. G. Nunes L. M. Chagas A. P. Garcia dos Santos I. M. da Conceição M. M. Dunstan P. O. 《Journal of Thermal Analysis and Calorimetry》2002,67(2):413-417
The standard molar enthalpies of formation of crystalline dialkyldithiocarbamates chelates, [Pd(S2CNR2)2], with R=C2H5, n-C3H7, n-C4H9 and i-C4H9, were determined through reaction-solution calorimetry in acetone, at 298.15 K. From the standard molar enthalpies of formation
of the gaseous chelates, the homolytic (172.4±3.8, 182.5±3.2,150.9±3.1 and 162.6±3.1 kJ mol−1) and heterolytic (745.0±3.8, 803.7±3.3,834.3±3.1 and 735.2±3.0 kJ mol−1) mean palladium-sulphur bond-dissociation enthalpies were calculated.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
97.
D.J. Dunstan 《Solid State Communications》1982,43(5):341-344
The exponential absorption tails of amorphous semiconductors are described by integrating the band-to-band absorption over an exponential distribution of band-gap. This requires that the tail states are derived from the band states, and are therefore not highly localised. We show that the fluctuations required by the absorption predict the principal features of the intrinsic 1.4eV luminescence of a-Si:H. The origin of the fluctuations is attributed to ‘frozen’ phonons which constitute the amorphous short-range disorder. 相似文献
98.
The adducts [MBr2(pipd) n ] (where M = Mn(II), Fe(II), Co(II), Ni(II), Cu(II), or Zn(II); pipd = piperidine; n = 1/2, 1, or 3/4) were synthesized and characterized by melting points, elemental analysis, thermal studies, and IR and electronic spectroscopy. From calorimetric studies in solution, the standard enthalpies of formation and several other thermochemical parameters of them were determined. The mean standard enthalpies of the metal–nitrogen bonds were calculated, as well as the enthalpies of the adduct formation in the gaseous phase. Using the values obtained for the enthalpies of reaction, the acidity order of the salts is obtained: FeBr2 > MnBr2 and CoBr2 > NiBr2. Comparing with pyridine adducts, the ligand piperidine is more basic than the ligand pyridine: pipd > py. 相似文献
99.
P. O. Dunstan 《Journal of Thermal Analysis and Calorimetry》2009,97(2):755-760
The [InCl3(L)
n
] (where L is 2,2′-bipyridine (bipy), 2,2′-bipyridine N,N′-dioxide (bipyNO), N,N-dimethylacetamide (dma), urea (u), thiourea (tu) or 1,1,3,3-tetramethylthiourea (tmtu); n = 1.5, 3 or 4) were synthesized and characterized by melting points, elemental analysis, thermal analysis and IR spectroscopy.
The enthalpies of dissolution of the adducts, Indium(III) chloride and ligands in 1.2 M aqueous HCl were measured and by using
thermochemical cycles, the following thermochemical parameters for the adducts have been determined: the standard enthalpies
for the Lewis acid/base reactions (Δr
H
θ), the standard enthalpies of formation (Δf
H
θ), the lattice standard enthalpies (ΔM
H
θ), and the standard enthalpies of decomposition (ΔD
H
θ). 相似文献
100.
Helane?MS?Costa Augusto?CV?Freitas Júnior Ian?PG?Amaral Izaura?Y?Hirata Patrícia?MG?Paiva Luiz?B?CarvalhoJr Vitor?Oliveira Ranilson?S?BezerraEmail author 《Chemistry Central journal》2013,7(1):166