氨基取代苯并咪唑衍生物的合成及在酮的氢转移反应中的应用

以α-氨基酸与邻苯二胺在微波辐射下反应合成了α-氨基取代苯并咪唑(1～5).1-(1H-苯并[d]咪唑-2-基)乙胺(1)与溴丁烷反应可形成单丁基、二丁基、三丁基取代产物1a～1d,1的氨基经Boc保护,N-烷基化后制备咪唑环上的N-烷基化产物1i～1g.制备的氨基取代咪唑与Ru(II)化合物原位组成催化体系,考察了其在取代苯乙酮的氢转移反应中的催化活性.结果表明RuCl2(PPh3)3与各配体组成的催化剂均有较好的催化活性,含有NH2基团的α-氨基取代苯并咪唑化合物参与的催化体系催化活性最好,TOF(Turnover frequency)可达到40200 h-1.     

Synthesis,crystal structures,and catalytic activities of palladium imidazole complexes formed by 2-hydroxyethyl group cleavage

N-4,6-dimethyl-2-pyrimidinylimidazole 1 and its hydroxyethyl derivative 1-(2-hydroxyethyl)-3-(4,6-dimethyl-2-pyrimidinyl)imidazolium chloride 2 have been synthesized and characterized. The attempted synthesis of bis(N-heterocyclic carbene)palladium complexes via the direct reaction of 2 with Pd(OAc)₂ results in the unexpected formation of a bis(N-arylimidazole) palladium complex 3. Additionally, the analogous bis(N-methylimidazole) palladium complex 4 has also been synthesized by the above method. Compounds 1–4 were characterized by elemental analysis, IR, and ¹H NMR. Additionally, their crystal structures have been determined by X-ray diffraction. Complexes 3 and 4 were found to be efficient catalysts for the Suzuki reaction.     

基于动态溶胀法制备中空聚合物微球

以表面带正电荷的m级聚苯乙烯微球为种子,经过甲苯、二乙烯基苯溶胀,聚合与包覆等过程制备了直径约5 m的中空聚合物微球。研究了溶剂类型、溶剂用量对动态溶胀法制备的中空聚合物微球粒径、分布和结构的影响,讨论了中空聚合物微球的形成机理。结果表明:添加一定量甲苯、二甲苯等挥发性溶剂是动态溶胀法形成中空聚合物微球的前提;甲苯用量越多,溶胀后形成的中空结构越明显,孔径越大;选择低溶解性的二甲苯溶剂更有利于中空结构的形成。     

第一原理研究铝锂金属间化合物

运用密度泛函理论系统地研究了二元铝锂金属间化合物Al₃Li、AlLi、Al₂Li₃和Al₄Li₉的结构、形成热、弹性和电子结构.通过计算四种金属间化合物的形成热,证明了金属间化合物中铝和锂之间具有强烈的化学作用. 在富锂金属间化合物中,随着锂的含量的增加,金属间化合物热力学稳定性呈线性减弱. 计算金属间化合物的单晶弹性常数可以得出四种金属间化合物都是机械稳定的. 运用Voigt-Reuss-Hil     

Continuous-wave and Q-switched Operation of a Tm,Ho:YAP ring laser

We demonstrated continuous-wave (CW) and Q-switched operation of a Tm,Ho:YAP ring laser at 77 K. The maximum CW output power of 2 W at 2130.7 nm was obtained under the incident pump power of 12 W, corresponding to a slope efficiency of 23% and an optical-to-optical efficiency of 16.7%. For the Q-switched regime the maximum output energy of 5 mJ with the pulse width of 160 ns at the repetition rate of 100 Hz was achieved, corresponding to a peak power of 31.25 kW.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.     

Growth,characterization and upconversion properties of erbium-doped potassium lithium tantalate niobate single crystals under 975 nm laser excitation

Potassium lithium tantalate niobate single crystals doped with erbium ions are grown by top-seeded solution growth method. The crystals are characterized by X-ray diffraction and differential thermal analysis. The refractive indices of the crystal are measured using ellipsometry method and fitted by Sellmeier equation. The as-grown crystals are tetragonal phase tungsten bronze-type structure with Curie temperature of 271.3 °C. Characteristic Er^3 + absorption bands are observed from 350 to 1100 nm in ultraviolet–visible-near infrared absorption spectra. These crystals emit brightly green and red upconversion fluorescence under 975 nm LD laser excitation, and the steady state upconversion spectra are obtained at room temperature. The red emission intensity increases as the erbium ions concentration increases in crystals. Processes of excited state absorption and energy transfer are responsible for upconversion luminescence. The emission intensities are quadratic dependences on pump power from pump power dependence analyses and deduction of transition rate equation model.     

Fabrication and luminescence behavior of phosphate glass ceramics co-doped with Er3+ and Yb3+

Transparent phosphate glass ceramics co-doped with Er³⁺ and Yb³⁺ in the system P₂O₅Li₂OCaF₂TiO₂ were successfully synthesized by melt-quenching and subsequent heating. Formation of the nanocrystals was confirmed by X-ray powder diffraction. Judd–Ofelt analyses of Er³⁺ ions in the precursor glasses and glass ceramics were performed to evaluate the intensity parameters Ω_2,4,6. Under 975 nm excitation, intense upconversion (UC) and infrared emission (1545 nm) were observed in the glass ceramics by efficient energy transfer from Yb³⁺ to Er³⁺. The luminescence processes were explained and the emission cross section was calculated by Fuchtbauer–Ladenburg (F–L) formula. The results confirm the potential applications of Er³⁺/Yb³⁺ co-doped glass ceramics as laser and fiber amplifier media.     

Stability in a general coupled laser array

For the first time we have presented a method to investigate the stability of quiescent state in a coupled laser array. By introducing tiny perturbation, stability of quiescent state can be known by investigating eigenvalues of coefficient matrix of the corresponding linear differential equations. Only when real parts of the eigenvalues were all negative or zero, the corresponding quiescent state is stable. Two tapes of coupled laser array with loop and linear topological structure were studied respectively. It was found that there were innumerable quiescent states and they could be divided into several types based on phase relation. Some types were stable and others were unstable. Topological structure affects the stability of quiescent state in a coupled laser array.