Resettable fluorescence logic gate based on calcein/layered double hydroxide ultrathin films

A fluorescent logic gate was fabricated based on calcein/layered double hydroxide ultrathin films (UTFs) via alternate assembly technique, which exhibits high stability, reversibility, and resettability. The logic gate was manipulated by utilizing pH value, Hg(2+) and Cl(-) ion as inputs, and the fluorescence emission of the (calcein/LDH)(16) UTF as output, serving as a three-input logic gate that combines the YES and INHIBIT operation.     

Morphology effects on the biofunctionalization of nanostructured ZnO

A stepwise surface functionalization methodology was applied to nanostructured ZnO films grown by metal organic chemical vapor deposition (MOCVD) having three different surface morphologies (i.e., nanorod layers (ZnO films-N), rough surface films (ZnO films-R), and planar surface films (ZnO films-P). The films were grown on glass substrates and on the sensing area of a quartz crystal microbalance (nano-QCM). 16-(2-Pyridyldithiol)-hexadecanoic acid (PDHA) was bound to ZnO films-N, -R, and -P through the carboxylic acid unit, followed by a nucleophilic displacement of the 2-pyridyldithiol moiety by single-stranded DNA capped with a thiol group (SH-ssDNA). The resulting ssDNA-functionalized films were hybridized with complementary ssDNA tagged with fluorescein (ssDNA-Fl). In a selectivity control experiment, no hybridization occurred upon treatment with non complementary DNA. The ZnO films' surface functionalization, characterized by FT-IR-ATR and fluorescence spectroscopy and detected on the nano-QCM, was successful on films-N and -R but was barely detectable on the planar surface of films-P.     

含1,3,4-噻二唑环吡唑并[3,4-d]嘧啶类化合物的合成及生物活性

通过5-氨基-4-氰基-1-苯基吡唑与甲酸发生环合、再经氯化和芳香族亲核取代反应,合成了12种新的含1,3,4-噻二唑环吡唑并[3,4-d]嘧啶类化合物.目标化合物的结构经红外光谱、核磁共振氢谱、质谱和元素分析方法予以确认.初步的生物活性测定试验表明,在50 mg/L浓度下,大部分目标化合物对小麦纹枯病菌(Rhizoctonia cerealis)表现出较好的杀菌活性,其中化合物5b,5d和5j的抑菌率超过90%.     

氨基取代苯并咪唑衍生物的合成及在酮的氢转移反应中的应用

以α-氨基酸与邻苯二胺在微波辐射下反应合成了α-氨基取代苯并咪唑(1～5).1-(1H-苯并[d]咪唑-2-基)乙胺(1)与溴丁烷反应可形成单丁基、二丁基、三丁基取代产物1a～1d,1的氨基经Boc保护,N-烷基化后制备咪唑环上的N-烷基化产物1i～1g.制备的氨基取代咪唑与Ru(II)化合物原位组成催化体系,考察了其在取代苯乙酮的氢转移反应中的催化活性.结果表明RuCl2(PPh3)3与各配体组成的催化剂均有较好的催化活性,含有NH2基团的α-氨基取代苯并咪唑化合物参与的催化体系催化活性最好,TOF(Turnover frequency)可达到40200 h-1.     

Synthesis,crystal structures,and catalytic activities of palladium imidazole complexes formed by 2-hydroxyethyl group cleavage

N-4,6-dimethyl-2-pyrimidinylimidazole 1 and its hydroxyethyl derivative 1-(2-hydroxyethyl)-3-(4,6-dimethyl-2-pyrimidinyl)imidazolium chloride 2 have been synthesized and characterized. The attempted synthesis of bis(N-heterocyclic carbene)palladium complexes via the direct reaction of 2 with Pd(OAc)₂ results in the unexpected formation of a bis(N-arylimidazole) palladium complex 3. Additionally, the analogous bis(N-methylimidazole) palladium complex 4 has also been synthesized by the above method. Compounds 1–4 were characterized by elemental analysis, IR, and ¹H NMR. Additionally, their crystal structures have been determined by X-ray diffraction. Complexes 3 and 4 were found to be efficient catalysts for the Suzuki reaction.     

基于动态溶胀法制备中空聚合物微球

以表面带正电荷的m级聚苯乙烯微球为种子,经过甲苯、二乙烯基苯溶胀,聚合与包覆等过程制备了直径约5 m的中空聚合物微球。研究了溶剂类型、溶剂用量对动态溶胀法制备的中空聚合物微球粒径、分布和结构的影响,讨论了中空聚合物微球的形成机理。结果表明:添加一定量甲苯、二甲苯等挥发性溶剂是动态溶胀法形成中空聚合物微球的前提;甲苯用量越多,溶胀后形成的中空结构越明显,孔径越大;选择低溶解性的二甲苯溶剂更有利于中空结构的形成。     

第一原理研究铝锂金属间化合物

运用密度泛函理论系统地研究了二元铝锂金属间化合物Al₃Li、AlLi、Al₂Li₃和Al₄Li₉的结构、形成热、弹性和电子结构.通过计算四种金属间化合物的形成热,证明了金属间化合物中铝和锂之间具有强烈的化学作用. 在富锂金属间化合物中,随着锂的含量的增加,金属间化合物热力学稳定性呈线性减弱. 计算金属间化合物的单晶弹性常数可以得出四种金属间化合物都是机械稳定的. 运用Voigt-Reuss-Hil     

Continuous-wave and Q-switched Operation of a Tm,Ho:YAP ring laser

We demonstrated continuous-wave (CW) and Q-switched operation of a Tm,Ho:YAP ring laser at 77 K. The maximum CW output power of 2 W at 2130.7 nm was obtained under the incident pump power of 12 W, corresponding to a slope efficiency of 23% and an optical-to-optical efficiency of 16.7%. For the Q-switched regime the maximum output energy of 5 mJ with the pulse width of 160 ns at the repetition rate of 100 Hz was achieved, corresponding to a peak power of 31.25 kW.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.