Mechanism of disease in early osteoarthritis: application of modern MR imaging techniques — a technical report

The application of biomolecular magnetic resonance imaging becomes increasingly important in the context of early cartilage changes in degenerative and inflammatory joint disease before gross morphological changes become apparent. In this limited technical report, we investigate the correlation of MRI T1, T2 and T1ρ relaxation times with quantitative biochemical measurements of proteoglycan and collagen contents of cartilage in close synopsis with histologic morphology. A recently developed MRI sequence, T1ρ, was able to detect early intracartilaginous degeneration quantitatively and also qualitatively by color mapping demonstrating a higher sensitivity than standard T2-weighted sequences. The results correlated highly with reduced proteoglycan content and disrupted collagen architecture as measured by biochemistry and histology. The findings lend support to a clinical implementation that allows rapid visual capturing of pathology on a local, millimeter level. Further information about articular cartilage quality otherwise not detectable in vivo, via normal inspection, is needed for orthopedic treatment decisions in the present and future.     

Imbert–Fedorov shifts of a Gaussian beam reflected from uniaxially anisotropic chiral media

We study the Imbert–Fedorov (IF) shifts of a reflected Gaussian beam from uniaxially anisotropic chiral media (UACM), where the chirality appears only in one direction and the host medium is a uniaxial crystal or an electric plasma. The numerical results are presented for three kinds of UACM, respectively. It is found that the IF shifts are closely related to the propagation properties of the two eigenwaves in the UACM. In general, when either of the eigenwaves is totally reflected, the IF shifts can change abruptly near the critical angle. The cross-polarized reflection coefficient has a greater effect on the spatial IF (SIF) shift than on the angular IF (AIF) shift, and the sign of the AIF shift depends mainly on that of the difference between the co-polarized reflectivity. By designing artificially the electromagnetic parameters of the UACM, we can control the IF shifts and acquire their more abundant properties.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO3‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO₃/(LaAlO₃)_0.29(Sr₂AlTaO₆)_0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 10⁹ cm^–2, and the density of basal stacking faults is below 1 × 10⁴ cm^–1. The (11\bar 2 \bar 2) ZnO exhibits strong D⁰X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.

     

Hydrogen bonds at silica–CO2 saturated water interface under geologic sequestration conditions

To investigate the effects of sequestration condition on hydrogen bonds between mineral and water, molecular dynamics simulations have been performed. The simulations were conducted at conditions related with geologic sequestration sites: pressure (3.1–32.6 MPa), temperature (318 and 383 K), salinity (0–3 M), salt (NaCl and CaCl₂) and silica surface models Q² (geminal), Q³ (isolated) and amorphous Q³. The hydrogen bonds were classified into four types: silica–silica, silica–dissolved CO₂, silica–water as donors and silica–water as acceptors. The mean numbers of hydrogen bonds for each type were analysed. The results show that: (1) silica surface silanol groups do not form H-bonds with dissolved CO₂ molecules in water (brine); (2) The mean number of hydrogen bonds between silanol groups follows the order: Q² > amorphous Q³ > Q³; (3) The mean number of hydrogen bonds between silanol and water molecules follows the order: Q³ > amorphous Q³ > Q².     

Structures,stabilities and electronic properties of boron-doped silicon clusters B3Sin (n=1–17) and their anions

The structures, stabilities and electronic properties of neutral and anionic B₃Si_n (n?=?1–17) clusters have been systemically investigated on the basis of density functional theory at the B3LYP/6-311?+?G(d) level and CALYPSO structure prediction method. The structural searches show that three boron atoms tend to form B₃ triangle encapsulated into Si_n cages with the increasing number of silicon atoms. Most of the lowest energy structures can be derived by using the squashed pentagonal bipyramid structure of B₃Si₄ and B₃Si₄^? as the major building unit. The relative stabilities are studied based on the calculated binding energies, second-order difference of energies and HOMO–LUMO gaps of the lowest energy structures. In addition, Hirshfeld, natural population analysis, Bader approaches and natural electronic configuration are performed to explore the charge transfer. At last, molecular orbital, magnetic properties, IR, Raman and UV–vis spectra are also, respectively, analysed for providing strong support for essential theoretical and experimental research.     

含磁控和荷控两种忆阻器的混沌电路设计与仿真

利用惠普实验室荷控和磁控两种忆阻器模型设计了一个五阶混沌电路. 数值仿真结果表明该电路在参数变化情况下能产生Hopf分岔和反倍周期分岔两种分岔行为,并能产生双涡卷、单涡卷、周期态等不同相轨道. 为了验证电路的混沌行为,利用基本元器件设计了惠普实验室荷控和磁控忆阻器模拟器,并将其应用到对所设计电路中进行Pspice仿真,电路仿真结果验证了理论分析的正确性. 关键词： 混沌电路 HP忆阻器 模拟器 Pspice仿真