飞秒激光在晶体中传输的级联非线性过程

系统地回顾了有关级联过程导致的各种非线性效应的工作,指出了级联效应可导致不同光谱成分间出现能量转移现象,且二阶级联过程中产生的白光还能够提供种子光进而得到基于参量放大过程的宽带锥形辐射。在此基础上,进一步研究了入射的基频波长对于超连续白光能量转移效果及产生倍频效率的影响以及二阶级联过程引起的偏振调制现象,指出当入射波长越靠近相位匹配波长时倍频效率越高,发现二阶级联效应还可以引起显著的基频光偏振调制。     

中子半影成像的闪烁体阵列空间分辨力模拟

为了比较3种闪烁体探测器的性能,利用蒙特卡罗方法计算了不同光纤直径的闪烁体阵列的空间分辨和能量沉积。模拟结果表明:相同光纤直径的普通液体闪烁体阵列空间分辨力比塑料闪烁体阵列提高了约0.1 mm,而氘代液体闪烁体阵列空间分辨力约为普通液体闪烁体阵列的1/2;富氢闪烁体的能量沉积比氘代闪烁体高;闪烁体光纤直径越小,分辨力越好;闪烁体越厚,光产额越高。     

空泡机制产生betatron X射线辐射的数值模拟

针对SILEX钛宝石激光器参数,采用PIC数值模拟程序VORPAL对激光尾波场加速进行了模拟,得到了电子轨迹及能量数据,进而通过理论计算得到了空泡机制下X射线辐射特性。结果表明,空泡机制下高能电子在空泡中做betatron振荡且多数电子被加速到170 MeV左右;加速能量较低的电子（约100 MeV）, 其辐射谱为临界能量约3 keV的类同步辐射谱,发散角约为8 mrad,而能量较高的电子（约170 MeV）对应的光子临界能量约为10 keV。     

不同水温下的中子输运等效质量热运动模型

为了解决蒙特卡罗模拟S(, )模型只能求解特定温度条件下中子输运问题的局限性,建立了中子在不同温度液态水中输运的等效质量热运动模型。在分析自由气体热运动模型的基础上,采用不同的等效质量对中子与水中氢原子的弹性散射模拟过程进行改进,对中子穿过水层后的流量进行模拟计算,通过与S(, )模型的计算结果的比较,得到了5个不同的温度点水中氢原子的最佳等效质量。根据5个不同温度点的数据拟合给出了最佳等效质量和温度的函数关系。采用该模型计算得到的中子在不同温度条件下水中输运参数与S(, )模型相符。等效质量热运动模型突破了S(, )模型只能计算有限温度点的局限性,能有效处理300～800 K任意温度水中的中子输运问题。     

Synthesis of CdSe and CdSe/TiO2 nanoparticles under multibubble sonoluminescence condition

CdSe and CdSe/TiO₂ nanoparticles were synthesized under multibubble sonoluminescence (MBSL) condition. The influences of TiO₂ introduced as the sensitizer on the morphology and crystal transformation were investigated. The morphology, phase and optical properties of the final products have been characterized by X-ray powder diffraction, transmission electron microscope, UV-vis absorption spectroscopy and photoluminescence spectroscopy. The results showed that as-prepared nanoparticles are well-crystallized, and the suppression of crystal pattern transition as well as the control of CdSe crystal growth can be implemented by coupling of TiO₂ semiconductor. Furthermore, the possible growth mechanism for different morphologies and crystal phases of the nanocrystals were also discussed.     

乌鲁木齐市采暖期大气PM10及PM2.5中Cd的形态分析

2009年12月14日—28日采集了新疆农业大学校园PM10和PM2.5样品,分析了重金属Cd的形态和风险指数。该采样点在冬季采暖期间PM10及PM2.5污染非常严重,PM10和PM2.5中Cd的含量分别为3.642和1.964ng.m-3,均以残渣态为主,但PM2.5中Cd的生物有效性高于PM10中Cd的生物有效性。PM10中Cd的致癌风险为6.56×10-6,而PM2.5中Cd的致癌风险为3.46×10-6,均处于可接受的风险水平。     

Orientation effects on the bandgap and dispersion behavior of 0.91Pb（Zn_（1/3）Nb_（2/3））O_3-0.09PbTiO_3 single crystals

0.91Pb(Zn_1/3Nb_2/3)O₃--0.09PbTiO₃ (PZN--9%PT) single crystals with different orientations are investigated by using a spectroscopic ellipsometer, and the refractive indices and the extinction coefficients are obtained. The Sellmeier dispersion equations for the refractive indices are obtained by the least square fitting, which can be used to calculate the refractive indices in a low absorption wavelength range. Average Sellmeier oscillator parameters E_o, $\lambda$_o, S_o, and E_d are calculated by fitting with the single-term oscillator equation, which are related directly to the electronic energy band structure. The optical energy bandgaps are obtained from the absorption coefficient spectra. Our results show that the optical properties of [001] and [111] poled crystals are very similar, but quite different from those of the [011] poled crystal.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

Design of a reentrant double staggered ladder circuit for V-band coupled-cavity traveling-wave tube

The reentrant double staggered ladder slow-wave structure is employed in a high-power V-band coupled-cavity traveling-wave tube. This structure has a wide bandwidth, a moderate interaction impedance, and excellent thermal dissipation properties, besides the easy fabrication. A well-matched waveguide coupler is proposed for the structure. Combining the design of attenuators, a full-scale three-dimensional circuit model for the V-band coupled-cavity traveling-wave tube is constructed. The electromagnetic characteristics and the beam--wave interaction of this structure are investigated. The beam current is set to be 100 mA, and the cathode voltage is tuned from 16.8 kV to 15.8 kV. The calculation results show that this tube can produce a saturated average output power over 100 W with an instantaneous bandwidth greater than 1.25 GHz in the frequency ranging from 58 GHz to 62 GHz. The corresponding gain and electronic efficiency can reach over 32 dB and 6.5%, respectively.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.