Levy stability for anisotropic dynamical fluctuation in high energy multiparticle production

The behaviour of Levy indexμ in various phase space dimensions is studied. The reason for the violation of Levy stable condition at three-dimension observed in experiment is investigated. It is shown that the apparent violation of Levy stable condition may be due to the wrong isotropic analysis for the highly anisotropic phase space of multiparticle production.     

Treatment of Coulomb Interaction in Momentum Space for p-3He Elastic Scattering

Applying the method proposed by R.Crespo and J.A.Tostevin to p-³He elastic scattering,we study the treatment of Coulomb interaction of momentum space.The differential cross sections and spin observables at 500 and 300 MeV are calculated with R=7fm.The present results are compared with those given in V-P method.It shows that the applicable range of angular momentum and momentum transfer in R-J method are wider than those in V-P method.     

Small particle size multiphase Li-alloy anodes for lithium-ionbatteries

An impressive improvement of the cycling performance of Li-alloy anodes (M + Li⁺ +e⁻ Li_xM) in rechargeable organic electrolyte lithium batteries can be achieved by replacing compact or large particle size metallic host matrices M (e.g. Sn or Sb) with small particle size (micro- or nano-scale) multiphase metallic host materials like Sn/SnSb_n or Sn/SnAg_n. Electrochemical alloy deposition is a convenient way to prepare sub-micrometer particles of Sn and SnSb_n or Sn and SnAg_n. During the first lithium insertion these small particle size multiphase matrix materials are expanded to a porous material, however, without formation of major cracks. This seems not only to be related with the small absolute changes in the size of the individual particles, but also with the fact that the more reactive particles are allowed to expand in a soft and ductile surrounding of still unreacted material.     

多晶硅不同晶面陷阱坑形貌与陷光效应的关系

提出了多晶硅表面陷阱坑内表面高次绒面的陷光模型。利用测不准原理,分析了光子散射方向与绒面上凸点大小的关系,利用光学傅里叶变换推导了光子逃逸陷阱坑概率与绒面陷阱坑形貌的关系。理论分析结果表明内表面布满凹凸点的U字形陷阱坑反射率比V字形的低;而内表面光滑的U字形陷阱坑的反射率比V字形的高。利用扫描电子显微镜拍摄了碱液刻蚀的多晶硅样品表面图像,分析了碱液刻蚀的不同晶面陷阱坑的形貌。[100]晶面呈峡谷状的陷阱坑,[111]晶面呈扭曲的U字形凹坑,[110]晶面则显示混合结构。实验测量了样品不同晶面的反射率曲线,证实了U字形陷阱坑的绒面具有相对低的反射率,与理论分析结果基本吻合。     

基于结构化光纤Bragg光栅的折射率梯度传感器研究

研究结构化光纤Bragg光栅(FBG)在折射率(RI)呈线性分布的液相介质环境下的响应特性。数值仿真结果表明,结构化FBG的反射谱特性强烈依赖于液相介质折射率(RI)的线性分布函数的某些特征参数,比如液相介质的RI沿FBG轴向的分布梯度、RI在FBG两端的差值等。基于理论仿真结果,建立了结构化FBG在低RI区(1.330～1.360)对液相介质的RI梯度进行测量的线性近似理论模型。通过相关实验研究,证明了理论仿真和分析的合理性及基于结构化FBG的RI梯度传感器在现实应用中的可行性。     

22nm极紫外光刻物镜热和结构变形及其对成像性能影响

极紫外光刻技术(EUVL)是半导体制造实现22nm及其以下节点的下一代光刻技术。在曝光过程中,EUVL物镜的每一面反射镜吸收35%～40%的入射极紫外(EUV)能量,使反射镜发生热和结构变形,影响投影物镜系统的成像性能。基于数值孔径为0.3,满足22nm技术节点的产业化EUV投影物镜,采用有限元分析(FEA)的方法研究反射镜变形分布,再将变形导入光学设计软件CODE V中,研究反射镜变形其对成像特性的影响。研究结果表明:当达到硅片的EUV能量为321mW,产量为每小时100片时,反射镜最高升温9.77℃,通光孔径内的最大变形为5.89nm;若采用相干因子0.5的部分相干光照明,变形对22nm线宽产生6.956nm的畸变和3.414%的线宽误差。