R410A在水平内螺纹管中沸腾换热实验研究

对于非共沸混合制冷剂R410A在外径9.52mm、5mm的两种不同的几何参数的内螺纹的流动沸腾换热进行了实验研究,分析讨论了制冷剂质量流速、管外水流量变化、强化管的参数、强化管的压降对换热系数影响以及其机理。试验的结果表明:换热系数随着流量的增大而增大,管径的大小对换热系数的影响较大,在相同的流量下,9.52mm的换热系数比5mm的大到110%~230%,5mm管的压降比9.52mm的大200%~300%。     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure

<正>In this study,the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically.The energy band diagrams,electrostatic field near the last quantum barrier,carrier concentration in the quantum well,internal quantum efficiency,and light output power are systematically investigated.The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction.These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.     

Effects of Nb substitution for Zr on the phases,microstructure and magnetic properties of Co80Zr18−xNbxB2 melt-spun ribbons

The phases, microstructure, and magnetic properties of Co₈₀Zr_18−xNb_xB₂ (x=1, 2, 3, and 4) melt-spun ribbons were investigated. The small substitution of Nb for Zr in the Co–Zr–B melt-spun ribbons resulted in the improvement of magnetic properties, especially the coercivity. The main effect of added Nb on the coercovity of Co–Zr–Nb–B melt-spun ribbons, originated from modification of the grain size of Co₁₁Zr₂ phase. The coercivity of the Co–Zr–Nb–B melt-spun ribbons depends on the annealing temperature. The optimal magnetic properties of H_c=5.1 kOe, and (BH)_max=3.4 MGOe were obtained in the Co₈₀Zr₁₅Nb₃B₂ melt-spun ribbons annealed at 600 °C for 3 min.     

Tuning giant magnetoimpedance response of Fe75.5Si13.5B7Nb3Cu1 amorphous ribbon by laser ablation

An easy method of tuning the response of maximum magnetoimpedance (MI) ratio in Fe_75.5Si_13.5B₇Nb₃Cu₁ amorphous ribbons was investigated by laser ablation. In order to obtain different GMI peak positions, the stripes were ablated by laser with different separations on the surface layer of the ribbon. When the stripes were parallel (or perpendicular) to the applied magnetic field, the peak location of maximum MI ratio would drift to larger (or smaller) external field. And the shift was correlated with the spaces between stripes. The applied fields corresponding to the minimum and maximum values of peak location are 13 Oe and 49 Oe at the frequency of 15 MHz, respectively. The phenomenon can be explained by the anisotropy field induced by demagnetizing field after the laser ablation.     

A compact passively Q-switched intra-cavity frequency doubled Nd:YAG/Cr4+:YAG composite crystal green laser

A compact diode-end-pumped passively Q-switched intra-cavity frequency doubled Nd:YAG/Cr⁴⁺:YAG composite crystal laser was demonstrated. The pulsed laser at 532 nm was produced and the dependence of the average out power, pulse width and pulse repetition rate on incident pump power were measured. Under the pump power of 14 W, the minimum pulse width of 3.5 ns with repetition rate of 27.5 kHz was obtained, corresponding single-pulse energy of 18 μJ and peak power of 5.3 kW.     

Analysis of the coupled thermoelastic vibration for axially moving beam

The coupled thermoelstic vibration characteristics of the axially moving beam are investigated. The differential equation of motion of the axially moving beam under the thermoelastic coupling is established based to the equilibrium equation and the thermal conduction equation involving deformation term. The eigenequation is deduced and the dimensionless complex frequencies of the axially moving beam with different boundary conditions under the coupled thermoelastic case are calculated by the differential quadrature method. The curves of the real parts and imaginary parts of the first three-order dimensionless complex frequencies versus the dimensionless axially moving speed are obtained. The effects of the dimensionless coupled thermoelastic factor, the ratio of length to height, the dimensionless moving speed on the stability of the beam are analyzed.     

Control of the switch between optical multistability and bistability in three-level V-type atoms

We theoretically investigated a hybrid absorptive-dispersive optical bistability and multistability behaviour in a three-level V-type system using a microwave field driving a hyperfine transition between two upper excited states inside a unidirectional ring cavity. We find that the intensity and the frequency detuning of the coupling field as well as the intensity of the microwave field can affect the OM behaviour dramatically, which can be used to control the transition from OM to OB or vice versa without need to resort the effect of the quantum interference. The effects of the phase, the quantum interference and the atomic cooperation parameter on the OM are also studied. Our scheme may be used for building more efficient all-optical switches and logic-gate devices for optical computing and quantum information processing.     

Complex object 3D measurement based on phase-shifting and a neural network

An accurate phase-height mapping algorithm based on phase-shifting and a neural network is proposed to improve the performance of the structured light system with digital fringe projection. As phase-height mapping is nonlinear, it is difficult to find the best camera model for the system. In order to achieve high accuracy, a trained three-layer back propagation neural network is employed to obtain the complicated transformation. The phase error caused by the non-sinusoidal attribute of the fringe image is analyzed. During the phase calculation process, a pre-calibrated phase error look-up-table is used to reduce the phase error. The detailed procedures of the sample data collection are described. By training the network, the relationship between the image coordinates and the 3D coordinates of the object can be obtained. Experimental results demonstrate that the proposed method is not sensitive to the non-sinusoidal attribute of the fringe image and it can recover complex free-form objects with high accuracy.     

In situ functionalized self-assembled monolayer surfaces for selective chemical vapor deposition of copper

Recent studies show that the self-assembled monolayer (SAM) is well suited to control the selectivity of chemical vapor deposition (CVD). Here, we reported the selective CVD for copper on the functionalized SAM surfaces (with -SH, -SS-, and -SO₃H terminal groups). The -SS- and -SO₃H terminal group surfaces were obtained through in situ chemical transformation of -SH terminal group surface of a 3-mercaptopropyltrimethoxysilane-SAM (MPTMS-SAM). As a result, the -SS- terminal group surface reduces copper deposition and the -SO₃H terminal group surface enhances copper deposition comparing to the -SH terminal group surface. In addition, the MPTMS-SAM was irradiated by UV-light through a photo mask to prepare SH-group and OH-group regions. Then, copper films were deposited only on the SH-group region of the substrate in chemical vapor deposition. Finally, patterns of copper films were formed in the way of UV-light irradiation. These results are expected for use of selective deposition of copper metallization patterns in IC manufacturing processes.